Photonic-crystal fiberPhotonic-crystal fiber (PCF) is a class of optical fiber based on the properties of photonic crystals. It was first explored in 1996 at University of Bath, UK. Because of its ability to confine light in hollow cores or with confinement characteristics not possible in conventional optical fiber, PCF is now finding applications in fiber-optic communications, fiber lasers, nonlinear devices, high-power transmission, highly sensitive gas sensors, and other areas.
Aspect ratioThe aspect ratio of a geometric shape is the ratio of its sizes in different dimensions. For example, the aspect ratio of a rectangle is the ratio of its longer side to its shorter side—the ratio of width to height, when the rectangle is oriented as a "landscape". The aspect ratio is most often expressed as two integer numbers separated by a colon (x:y), less commonly as a simple or decimal fraction. The values x and y do not represent actual widths and heights but, rather, the proportion between width and height.
Aluminium gallium arsenideAluminium gallium arsenide (also gallium aluminium arsenide) (AlxGa1−xAs) is a semiconductor material with very nearly the same lattice constant as GaAs, but a larger bandgap. The x in the formula above is a number between 0 and 1 - this indicates an arbitrary alloy between GaAs and AlAs. The chemical formula AlGaAs should be considered an abbreviated form of the above, rather than any particular ratio. The bandgap varies between 1.42 eV (GaAs) and 2.16 eV (AlAs). For x < 0.4, the bandgap is direct.
Mesoscopic physicsMesoscopic physics is a subdiscipline of condensed matter physics that deals with materials of an intermediate size. These materials range in size between the nanoscale for a quantity of atoms (such as a molecule) and of materials measuring micrometres. The lower limit can also be defined as being the size of individual atoms. At the microscopic scale are bulk materials. Both mesoscopic and macroscopic objects contain many atoms.
Band gapIn solid-state physics and solid-state chemistry, a band gap, also called a bandgap or energy gap, is an energy range in a solid where no electronic states exist. In graphs of the electronic band structure of solids, the band gap refers to the energy difference (often expressed in electronvolts) between the top of the valence band and the bottom of the conduction band in insulators and semiconductors. It is the energy required to promote an electron from the valence band to the conduction band.
PhotodetectorPhotodetectors, also called photosensors, are sensors of light or other electromagnetic radiation. There is a wide variety of photodetectors which may be classified by mechanism of detection, such as photoelectric or photochemical effects, or by various performance metrics, such as spectral response. Semiconductor-based photodetectors typically photo detector have a p–n junction that converts light photons into current. The absorbed photons make electron–hole pairs in the depletion region.
Gallium arsenideGallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows. GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others.
Surface plasmonSurface plasmons (SPs) are coherent delocalized electron oscillations that exist at the interface between any two materials where the real part of the dielectric function changes sign across the interface (e.g. a metal-dielectric interface, such as a metal sheet in air). SPs have lower energy than bulk (or volume) plasmons which quantise the longitudinal electron oscillations about positive ion cores within the bulk of an electron gas (or plasma). The charge motion in a surface plasmon always creates electromagnetic fields outside (as well as inside) the metal.
Magnetic semiconductorMagnetic semiconductors are semiconductor materials that exhibit both ferromagnetism (or a similar response) and useful semiconductor properties. If implemented in devices, these materials could provide a new type of control of conduction. Whereas traditional electronics are based on control of charge carriers (n- or p-type), practical magnetic semiconductors would also allow control of quantum spin state (up or down).
Optical mouseAn optical mouse is a computer mouse which uses a light source, typically a light-emitting diode (LED), and a light detector, such as an array of photodiodes, to detect movement relative to a surface. Variations of the optical mouse have largely replaced the older mechanical mouse design, which uses moving parts to sense motion. The earliest optical mice detected movement on pre-printed mousepad surfaces.
Plasma displayA plasma display panel (PDP) is a type of flat panel display that uses small cells containing plasma; ionized gas that responds to electric fields. Plasma televisions were the first large (over 32 inches diagonal) flat panel displays to be released to the public. Until about 2007, plasma displays were commonly used in large televisions. By 2013, they had lost nearly all market share due to competition from low-cost LCDs and more expensive but high-contrast OLED flat-panel displays.
Liquid-crystal displayA liquid-crystal display (LCD) is a flat-panel display or other electronically modulated optical device that uses the light-modulating properties of liquid crystals combined with polarizers. Liquid crystals do not emit light directly but instead use a backlight or reflector to produce images in color or monochrome. LCDs are available to display arbitrary images (as in a general-purpose computer display) or fixed images with low information content, which can be displayed or hidden: preset words, digits, and seven-segment displays (as in a digital clock) are all examples of devices with these displays.
Light-emitting diodeA light-emitting diode (LED) is a semiconductor device that emits light when current flows through it. Electrons in the semiconductor recombine with electron holes, releasing energy in the form of photons. The color of the light (corresponding to the energy of the photons) is determined by the energy required for electrons to cross the band gap of the semiconductor. White light is obtained by using multiple semiconductors or a layer of light-emitting phosphor on the semiconductor device.
OLEDAn organic light-emitting diode (OLED), also known as organic electroluminescent (organic EL) diode, is a light-emitting diode (LED) in which the emissive electroluminescent layer is a film of organic compound that emits light in response to an electric current. This organic layer is situated between two electrodes; typically, at least one of these electrodes is transparent. OLEDs are used to create digital displays in devices such as television screens, computer monitors, and portable systems such as smartphones and handheld game consoles.
Dark current (physics)In physics and in electronic engineering, dark current is the relatively small electric current that flows through photosensitive devices such as a photomultiplier tube, photodiode, or charge-coupled device even when no photons enter the device; it consists of the charges generated in the detector when no outside radiation is entering the detector. It is referred to as reverse bias leakage current in non-optical devices and is present in all diodes.
Surface plasmon resonanceSurface plasmon resonance (SPR) is a phenomenon that occurs where electrons in a thin metal sheet become excited by light that is directed to the sheet with a particular angle of incidence, and then travel parallel to the sheet. Assuming a constant light source wavelength and that the metal sheet is thin, the angle of incidence that triggers SPR is related to the refractive index of the material and even a small change in the refractive index will cause SPR to not be observed.
Blue laserA blue laser emits electromagnetic radiation with a wavelength between 400 and 500 nanometers, which the human eye sees in the visible spectrum as blue or violet. Blue lasers can be produced by direct, inorganic diode semiconductor lasers based on quantum wells of gallium(III) nitride at 380-417nm or indium gallium nitride at 450nm diode-pumped solid-state infrared lasers with frequency-doubling to 405nm upconversion of direct diode semiconductor lasers via thullium or paraseodyium doped fibers at 480nm metal vapor, ionized gas lasers of helium-cadmium at 442 nm and 10-200 mW argon-ion lasers at 458 and 488 nm Lasers emitting wavelengths below 445 nm appear violet, but are called blue lasers.
Cadmium selenideCadmium selenide is an inorganic compound with the formula CdSe. It is a black to red-black solid that is classified as a II-VI semiconductor of the n-type. It is a pigment but applications are declining because of environmental concerns Three crystalline forms of CdSe are known which follow the structures of: wurtzite (hexagonal), sphalerite (cubic) and rock-salt (cubic). The sphalerite CdSe structure is unstable and converts to the wurtzite form upon moderate heating.
Zinc selenideZinc selenide (ZnSe) is a light-yellow, solid compound comprising zinc (Zn) and selenium (Se). It is an intrinsic semiconductor with a band gap of about 2.70 eV at . ZnSe rarely occurs in nature, and is found in the mineral that was named after Hans Stille called "stilleite". ZnSe can be made in both hexagonal (wurtzite) and cubic (zincblende) crystal structure. It is a wide-bandgap semiconductor of the II-VI semiconductor group (since zinc and selenium belong to the 12th and 16th groups of the periodic table, respectively).
Indium gallium arsenideIndium gallium arsenide (InGaAs) (alternatively gallium indium arsenide, GaInAs) is a ternary alloy (chemical compound) of indium arsenide (InAs) and gallium arsenide (GaAs). Indium and gallium are group III elements of the periodic table while arsenic is a group V element. Alloys made of these chemical groups are referred to as "III-V" compounds. InGaAs has properties intermediate between those of GaAs and InAs. InGaAs is a room-temperature semiconductor with applications in electronics and photonics.
