Publications related to Aluminium gallium arsenide

In situ construction of graphdiyne based heterojunctions by a deprotection-free approach for photocatalytic hydrogen generation

Graphdiyne (GDY) with a direct bandgap, high charge carrier mobility, and ordered pore structure, is considered an excellent matrix for the construction of heterojunction photocatalysts. However, the traditional fabrication methods for GDY-based heterojunc ...

Royal Society of Chemistry2023

The nanoscale impact of individual nonradiative point defects on InGaN/GaN quantum wells

Thomas Fjord Kjaersgaard Weatherley

Today's world depends on optoelectronic devices: light-emitting diodes illuminate our houses and backlight the displays on our gadgets, while laser diodes underpin fibre-optic communication. Such optoelectronic devices rely on crystalline semiconductor het ...

EPFL2023

Optoelectronics based on the spin-valley physics of 2D materials

Juan Francisco Gonzalez Marin

Two-dimensional (2D) materials are atomically thin crystals with exceptional mechanical, electrical and optical properties. Their unique characteristics originating from quantum confinement in the vertical dimension have attracted a strong interest for sci ...

EPFL2022

Modulating the Reactivity of Liquid Ga Nanoparticle Inks by Modifying Their Surface Chemistry

Raffaella Buonsanti, Laia Castilla Amorós, James Richard Pankhurst, Tzu-Chin Chang Chien

Micro- and nanosized particles of liquid metals, particularly Ga-based alloys, are attracting increasing attention for applications in several fields. The surface functionalization of Ga-based nanoparticles (NPs) with organic ligands renders easily process ...

2022

A review on two-dimensional (2D) and 2D-3D multidimensional perovskite solar cells: Perovskites structures, stability, and photovoltaic performances

Mohammad Khaja Nazeeruddin

Perovskite solar cells (PSCs) fabricated with two-dimensional (2D) halide and 2D-3D mixed-halide materials are remarkable for their optoelectronic properties. The 2D perovskite structures are extremely stable but show limited charge transport and large ban ...

ELSEVIER2021

Transcapacitances in EPFL HEMT Model

Jean-Michel Sallese, Farzan Jazaeri

In this article, we present a closed-form solution for transcapacitances in GaN HEMTs derived from a design-oriented charge-based model of the AlGaAs/GaAs- and AlGaN/GaN-based HEMTs that were recently proposed. The analytical expressions are based on the c ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

First-principles calculations of charge carrier mobility and conductivity in bulk semiconductors and two-dimensional materials

Samuel Poncé, Feliciano Giustino

One of the fundamental properties of semiconductors is their ability to support highly tunable electric currents in the presence of electric fields or carrier concentration gradients. These properties are described by transport coefficients such as electro ...

IOP PUBLISHING LTD2020

Tailored-Potential Semiconductor Quantum Nanostructures Grown in Inverted Pyramids

Mikhail Lazarev

We have focused on the ability to tune the aluminum (Al) content of the AlGaAs alloy along the growth direction in inverted pyramids (by MOVPE), thus tailoring the potential along a QWR nanostructure. Three parabolic-potential QDs (PQDs) of different poten ...

EPFL2019

Integrated Gallium Phosphide Photonics

Katharina Schmeing

The integration of new materials mediating light-matter interaction in nanoscale devices is a persistent goal in nanophotonics. One of these materials is Gallium phosphide, which offers an attractive combination of a high refractive index (n=3.05 at a wave ...

EPFL2019

Enhancing Optical Nonlinear Processes Performance of Silicon Nitride Waveguides

Camille Sophie Brès, Davide Grassani, Eirini Tagkoudi

Silicon nitride has recently attracted significant interest for nonlinear integrated optics. In addition to its excellent linear properties, silicon nitride offers a bandgap larger than silicon, and a wide transparency window spanning from the visible all ...

IEEE2018

2D transition metal dichalcogenides

Andras Kis, Oleg Yazyev, Dmitry Ovchinnikov, Sajedeh Manzeli, Diego José Pasquier

Graphene is very popular because of its many fascinating properties, but its lack of an electronic bandgap has stimulated the search for 2D materials with semiconducting character. Transition metal dichalcogenides (TMDCs), which are semiconductors of the t ...

Nature Publishing Group2017

Ordered nanostructures on silicon substrates : from the top-down to the bottom-up

Jelena Vukajlovic Plestina

Silicon is today the main material used in electronics. It is a very advanced and mature technology. It is therefore clear that new technological concepts and materials should be introduced through the integration on the silicon platform. III-V semiconduct ...

EPFL2017

Atomically Thin Two-dimensional Materials Grown by Molecular Beam Epitaxy

Ming-Wei Chen

Atomically thin two-dimensional (2D) materials have attracted great interest due to their unique optoelectronic properties which are very different from their bulk counterparts. Most of the proof-of-concept devices, however, have been demonstrated using th ...

EPFL2017

GaAs nanowires: from doping to plasmonic hybrid devices

Alberto Casadei

Semiconductor nanowires (NWs) are filamentary crystals with the diameter ranging from few tens up to few hundreds of nanometers. In the last 20 years, they have been intensively studied for the prospects that their unique quasi-one dimensional shape offers ...

EPFL2016

Atomic Scale Observation of Chemical and Electronic Properties of Metal-Oxide Surfaces

Christian Alexander Stephan Dette

To meet the future global energy demand - an estimated additional 10 terawatts (TWs) per year in 2050 - a diversification of energy sources and fuels is needed. Solar energy represents a prominent alternative energy source. An important material for these ...

EPFL2016

Origin of Fermi-level pinning at GaAs/oxide interfaces through the hybrid functional study of defects

Davide Colleoni

Gallium arsenide is currently under scrutiny for replacing silicon in microelectronic devices due to its high carrier mobilities. However, the widespread use of this semiconductor is hampered by the intrinsic difficulty of producing high-quality interfaces ...

EPFL2015

Electronic properties of transition-metal dichalcogenides

Andras Kis

Graphene is not the only prominent example of two-dimensional (2D) materials. Due to their interesting combination of high mechanical strength and optical transparency, direct bandgap and atomic scale thickness transition-metal dichalcogenides (TMDCs) are ...

Cambridge Univ Press2015

Ultrafast spectroscopy of wide bandgap semiconductor nanostructures

Mehran Shahmohammadi

Group III-nitrides have been considered a promising choice for the realization of optoelectronic devices since 1970. Since the first demonstration of the high-brightness blue light-emitting diodes (LEDs) by Shuji Nakamura and coworkers, the fabrication of ...

EPFL2015

An ultra-low temperature scanning Hall probe microscope for magnetic imaging below 40 mK

Henrik Moodysson Rønnow, Julian Piatek

We describe the design of a low temperature scanning Hall probe microscope (SHPM) for a dilution refrigerator system. A detachable SHPM head with 25.4 mm OD and 200 mm length is integrated at the end of the mixing chamber base plate of the dilution refrige ...

American Institute of Physics2014

TiO2 Anatase with a Bandgap in the Visible Region

Klaus Kern, Christian Alexander Stephan Dette, Feliciano Giustino, Christopher Seiji Kley

TiO2 anatase plays a central role in energy and environmental research. A major bottleneck toward developing artificial photosynthesis with TiO2 is that it only absorbs ultraviolet light, owing to its large bandgap of 3.2 eV. If one could reduce the bandga ...

Amer Chemical Soc2014