Publications related to Radiation hardening

Single-Photon Avalanche Diode Image Sensors for Harsh Radiation Environments

The space industry has experienced substantial growth in recent years, leading to rapid advancements in space exploration and space-based technologies. Consequently, the study of electronics and sensor performance in extreme environments has become crucial ...

EPFL2024

Generation of entangled photon pairs from a silicon bichromatic photonic crystal cavity

Matteo Galli, Marco Clementi, Thanavorn Poempool

Integrated quantum photonics leverages the on-chip generation of nonclassical states of light to realize key functionalities of quantum devices. Typically, the generation of such nonclassical states relies on whispering gallery mode resonators, such as int ...

Aip Publishing2024

The effect of plasma shaping on high density H-mode SOL profiles and fluctuations in TCV

Holger Reimerdes, Benoît Labit, Christian Gabriel Theiler, Umar Sheikh, Guang-Yu Sun, Luke Simons, Nicola Vianello, Sophie Danielle Angelica Gorno, Cedric Kar-Wai Tsui, Claudia Colandrea, Adriano Stagni, Yi Wang

The impact of plasma shaping on the properties of high density H-mode scrape-off layer (SOL) profiles and transport at the outer midplane has been investigated on Tokamaka configuration variable. The experimental dataset has been acquired by evolving the u ...

IOP Publishing Ltd2024

Contemporary Logic Synthesis: with an Application to AQFP Circuit Optimization

Siang-Yun Lee

Electronic devices play an irreplaceable role in our lives. With the tightening time to market, exploding demand for computing power, and continuous desire for smaller, faster, less energy-consuming, and lower-cost chips, computer-aided design for electron ...

EPFL2024

Radiation Hardness of MALTA2, a Monolithic Active Pixel Sensor for Tracking Applications

Edoardo Charbon, Francesco Piro, Ashish Sharma

MALTA is a depleted monolithic active pixel sensor (DMAPS) developed in the Tower Semiconductor 180-nm CMOS imaging process. Monolithic CMOS sensors offer advantages over current hybrid imaging sensors in terms of both increased tracking performance due to ...

Ieee-Inst Electrical Electronics Engineers Inc2023

Method and setup for light detection and ranging

Tobias Kippenberg, Anton Lukashchuk

A method and a setup for light detection and ranging are disclosed. The setup is configured to carry out the following method: generating signal radiation (S) at multiple signal frequencies (fs) with an optical signal source (1), wherein the signal radiati ...

2023

Vacancy segregation and intrinsic coordination defects at (111) twist grain boundaries in diamond

Carolina Baruffi, Christian Brandl

High radiation damage resistance has become increasingly important for applications of functional materials in harsh environments. The high radiation damage resistance diamond cubic carbon is a unique material which is considered for radiation environments ...

Pergamon-Elsevier Science Ltd2023

MALTA-Cz: a radiation hard full-size monolithic CMOS sensor with small electrodes on high-resistivity Czochralski substrate

Edoardo Charbon, Francesco Piro, Ashish Sharma

Depleted Monolithic Active Pixel Sensor (DMAPS) sensors developed in the Tower Semiconductor 180 nm CMOS imaging process have been designed in the context of the ATLAS ITk upgrade Phase-II at the HL-LHC and for future collider experiments. The "MALTA-Czoch ...

Iop Publishing Ltd2023

Hydrogenated amorphous silicon high flux x-ray detectors for synchrotron microbeam radiation therapy

Sylvain Dunand, Nicolas Würsch, Matthew James Large, Giulia Rossi

Objective. Microbeam radiation therapy (MRT) is an alternative emerging radiotherapy treatment modality which has demonstrated effective radioresistant tumour control while sparing surrounding healthy tissue in preclinical trials. This apparent selectivity ...

IOP Publishing Ltd2023

Front-End Circuits for Radiation-Hard Monolithic CMOS Sensors targeting High-Energy Physics Applications

Francesco Piro

Monolithic pixel sensors integrate the sensor matrix and readout in the same silicon die, and therefore present several advantages over the more largely used hybrid detectors in high-energy physics. They offer an easier detector assembly, lower cost, lower ...

EPFL2023

Radiation-tolerant Multichannel Dew Point Temperature Monitoring System for High Energy Physics Applications

Amar Kapic

The next generation of high-energy physics (HEP) detectors will predominantly be silicon-based. As pixel sensor technology gains momentum and the number of channels surpasses one billion (for a volume of approximately 20 m3) to achieve the high resolution ...

EPFL2023

Fab-to-fab and run-to-run variability in 130 nm and 65 nm CMOS technologies exposed to ultra-high TID

Jean-Michel Sallese, Adil Koukab, Gennaro Termo, Stefano Michelis

The discovery of a large fab-to-fab variability in the TID response of the CMOS technologies used in the design of ASICs for the particle detectors of the HL-LHC triggered a monitoring effort to verify the consistency of the CMOS production process over ti ...

IOP Publishing Ltd2023

Dynamic control of high-voltage actuator arrays by light-pattern projection on photoconductive switches

Herbert Shea, Amir Firouzeh, Edouard Franck Vincent Gustave Leroy, Vesna Bacheva, Aiste Balciunaite

The ability to control high-voltage actuator arrays relies, to date, on expensive microelectronic processes or on individual wiring of each actuator to a single off-chip high-voltage switch. Here we present an alternative approach that uses on-chip photoco ...

SPRINGERNATURE2023

The X-Point radiating regime at ASDEX Upgrade and TCV

Holger Reimerdes, Christian Gabriel Theiler, Marco Wischmeier, Umar Sheikh, Artur Perek, Bernhard Sieglin

Future fusion reactors require a safe, steady-state divertor operation. With deep divertor detachment, which is typically induced by impurity seeding, the radiation concentrates in a small region at the X-point or on closed flux surfaces above the X-point. ...

Elsevier2023

Hardware-Software co-design Methodologies for Edge AI Optimization

Flavio Ponzina

ML-based edge devices may face memory and computational errors that affect applications' reliability and performance. These errors can be the result of particular working conditions (e.g., radiation areas in physical experiments or avionics) or could be th ...

EPFL2023

Robust Analog Multisensory Array System for Lossy Capacitive Sensors Over Long Distances

Sandro Carrara, Andromachi Tsirou, Amar Kapic

A robust capacitive multisensory readout system is presented in this article. The system consists of a few thousand lossy capacitive-based sensors that can be modeled as a parallel connection of sensor capacitor and undesirable leakage resistance. The real ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2023

Recent results with radiation-tolerant TowerJazz 180 nm MALTA sensors

Francesco Piro, Abhishek Sharma

To achieve the physics goals of future colliders, it is necessary to develop novel, radiation-hard silicon sensors for their tracking detectors. We target the replacement of hybrid pixel detectors with Depleted Monolithic Active Pixel Sensors (DMAPS) that ...

ELSEVIER2022

MALTA3: Concepts for a new radiation tolerant sensor in the TowerJazz 180 nm technology

Francesco Piro

The upgrade of the MALTA DMAPS designed in Tower 180 nm CMOS Imaging process will implement the numerous modifications, as well as front-end changes in order to boost the charge collection efficiency after the targeted fluence of 1x10(15) 1 MeVn(eq)/cm(2). ...

ELSEVIER2022

Radiation Hardness Study of Single-Photon Avalanche Diode for Space and High Energy Physics Applications

Edoardo Charbon, Emanuele Ripiccini, Ming-Lo Wu, Ekin Kizilkan, Pouyan Keshavarzian, Francesco Gramuglia, Kazuhiro Morimoto, Carlo Alberto Fenoglio

The radiation hardness of 180 nm complementary metal-oxide-semiconductor (CMOS) and 55 nm bipolar-CMOS-double-diffused MOS single-photon avalanche diodes (SPADs) is studied using 10 MeV and 100 MeV protons up to a displacement damage dose of 1 PeV/g. It is ...

MDPI2022

Influence of Fin and Finger Number on TID Degradation of 16-nm Bulk FinFETs Irradiated to Ultrahigh Doses

Christian Enz

This article investigates the fin- and finger-number dependence of the total ionizing dose (TID) degradation in 16-nm bulk Si FinFETs at ultrahigh doses. n- and p-FinFETs designed with different numbers of fins and fingers are irradiated up to 500 Mrad(SiO ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022