Lead zirconate titanate

Applied sciences
Electrical engineering
Electronic engineering
Analogue electronics

About
Privacy
Disclaimer

Graph Chatbot

Related publications (30)

Design Considerations of Ferroelectric Properties for Negative Capacitance MOSFETs

Mihai Adrian Ionescu, Christian Enz, Farzan Jazaeri, Ali Saeidi

Impact of physical parameters of ferroelectric layer on the performance of Negative Capacitance (NC) MOSFETs is experimentally studied in this paper. Electrical behaviors of PZT-based and Si:HfO2-based NC-FETs are investigated and discussed. In a PZT-based ...

2018

Strain generation and energy-conversion mechanisms in lead-based and lead-free piezoceramics

Dragan Damjanovic

Piezoelectric ceramics generate strain through the intrinsic piezoelectric effect, the motion of ferroelectric domain walls, or through field-induced phase transitions. The enhanced piezoelectric properties observed in morphotropic solid solutions arise fr ...

2018

Frequency-dependent decoupling of domain-wall motion and lattice strain in bismuth ferrite

Dragan Damjanovic

Dynamics of domain walls are among the main features that control strain mechanisms in ferroic materials. Here, we demonstrate that the domain-wall-controlled piezoelectric behaviour in multiferroic BiFeO3 is distinct from that reported in classical ferroe ...

Nature Research2018

Characterization methodology for lead zirconate titanate thin films with interdigitated electrode structures

Paul Muralt, Robin Nigon, Trygve Magnus Raeder

The accurate evaluation of ferroelectric thin films operated with interdigitated electrodes is quite a complex task. In this article, we show how to correct the electric field and the capacitance in order to obtain identical polarization and CV loops for a ...

Amer Inst Physics2017

Internal electric fields and electrode effects in ferroelectric thin films for piezoelectric energy harvesting

Robin Nigon

The continuing decrease of power requirements of electronic circuits offers the potential to deploy wireless systems as embedded sensors for cars or industrial tools, and implanted medical devices. Harvesting ambient vibrations by an appropriate energy har ...

EPFL2017

Domain Pinning: Comparison of Hafnia and PZT Based Ferroelectrics

Paul Muralt, Robin Nigon

Even though many studies on the field cycling behavior of ferroelectric hafnium oxide have recently been published, the issue is still not fully understood. The initial increase of polarization during first cycles is explained by different theoretical and ...

Wiley2017

Critical scattering and incommensurate phase transition in antiferroelectric PbZrO3 under pressure

Alexander Tagantsev

Antiferroelectric lead zirconate is the key ingredient in modern ferroelectric and piezoelectric functional solid solutions. By itself it offers opportunities in new-type non-volatile memory and energy storage applications. A highly useful and scientifical ...

Springer Nature2017

A concept of wireless and passive very-high temperature sensor

Paul Muralt, Ramin Matloub Aghdam, Andrea Mazzalai

There is a need for sensors capable operating at temperatures above 1000 degrees C. We describe an innovative sensor that might achieve this goal. The sensor comprises two main elements: a thermocouple and a surface acoustic wave (SAW) strain sensor. The c ...

Amer Inst Physics2017

Nonlinear dynamics of polar regions in paraelectric phase of (Ba1-x,Srx)TiO3 ceramics

Dragan Damjanovic

The dynamic dielectric nonlinearity of barium strontium titanate (Ba1-x, Sr-x) TiO3 ceramics is investigated in their paraelectric phase. With the goal to contribute to the identification of the mechanisms that govern the dielectric nonlinearity in this fa ...

AIP American Institute of Physics2017

Negative Capacitance as Performance Booster for Tunnel FETs and MOSFETs: An Experimental Study

Mihai Adrian Ionescu, Christian Enz, Igor Stolichnov, Farzan Jazaeri, Ali Saeidi, Francesco Bellando

This letter reports for the first time a full experimental study of performance boosting of tunnel FETs (TFETs) and MOSFETs by negative capacitance (NC) effect. We discuss the importance of capacitance matching between a ferroelectric NC and a device capac ...

Institute of Electrical and Electronics Engineers2017

Page 2 of 2