Publications related to High-voltage switchgear

Phase Shift Angle Segmentation Modulation for Soft-Switching Medium-Voltage DAB Converter With Series-Connected SiC MOSFETs

The medium-voltage (MV) dual active bridge (DAB) converter with series-connected SiC (S-SiC) MOSFETs is a promising solution for high-power-density isolated dc/dc converter. To improve the voltage sharing and reliability of S-SiC, relatively large snubber ...

Ieee-Inst Electrical Electronics Engineers Inc2024

SPAD Developed in 55 nm Bipolar-CMOS-DMOS Technology Achieving Near 90% Peak PDP

Edoardo Charbon, Claudio Bruschini, Ekin Kizilkan, Pouyan Keshavarzian, Francesco Gramuglia, Won Yong Ha, Myung Jae Lee

We present a single-photon avalanche diode (SPAD) developed in 55 nm bipolar-CMOS-DMOS (BCD) technology, which achieves high photon detection probability (PDP) while its breakdown voltage is lower than 20 V. To enhance the PDP performance, the SPAD junctio ...

Ieee-Inst Electrical Electronics Engineers Inc2024

An Ultralow-Power Triaxial MEMS Accelerometer With High-Voltage Biasing and Electrostatic Mismatch Compensation

Kyojin Choo, Li Xu, Yimai Peng

This article presents a triaxial micro electromechani-cal system (MEMS) capacitive accelerometer using a high-voltage biasing technique to achieve high resolution with ultralow power. The accelerometer system generates a differential pair of high voltages ...

Ieee-Inst Electrical Electronics Engineers Inc2024

Tailoring Organic/Inorganic Interface Trap States of Metal Oxide/Polyimide toward Improved Vacuum Surface Insulation

Chao Wang, Guang-Yu Sun, Haoxiang Zhao

High-voltage and high-power devices are indispensablein spacecraftfor outer space explorations, whose operations require aerospace materialswith adequate vacuum surface insulation performance. Despite persistentattempts to fabricate such materials, current ...

AMER CHEMICAL SOC2023

A Front-End CMOS Interface Circuit With High Voltage Charge Pump and Oscillator for Capacitive Micromachined Ultrasonic Transducers

Sandro Carrara, Gian Luca Barbruni, Zhengwen Jiang, Yihe Zhao

Label-free biosensors, combined with miniaturized micro-electromechanical sensory platforms, offer an attractive solution for real-time and facile monitoring of biomolecules due to their high sensitivity and selectivity without the need for specifically la ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2023

A Delay and Power Efficient Voltage Level Shifter with Low Leakage Power

Alexandre Schmid, Mehdi Saberi

This paper presents a new power-efficient and high-speed voltage level shifter. In the proposed structure, the existing contentions at the internal nodes are reduced using auxiliary transistors and feedback networks, leading to a significant reduction in t ...

IEEE2023

Electrode Impact on the Electrical Breakdown of Dielectric Elastomer Thin Films

Herbert Shea, Fabio Beco Albuquerque

Dielectric Elastomer Actuators (DEAs) enable the realization of energy-efficient and compact actuator systems. DEAs operate at the kilovolt range with typically microampere-level currents and hence minimize thermal losses in comparison to low voltage/high ...

MDPI2023

Analysis and Design for Medium Voltage Dual Active Bridge Converter Based on Series-Connected SiC MOSFETs

Chengmin Li, Rui Lu, Heng Fang

In this article, a series-connected SiC MOSFETs-based medium voltage (MV) dual active bridge (DAB) converter featuring a lowvoltage difference amongdevices and high efficiency is proposed. In the developed DAB converter, the zero voltage switching-on chara ...

Ieee-Inst Electrical Electronics Engineers Inc2023

Urea Derivative-Promoted CsPbl(2)Br Perovskite Solar Cells with High Open-Circuit Voltage

Bowen Yang, Yang Liu, Chen Li, Xin Guo

Inorganic perovskite solar cells (PSCs) have witnessed extraordinary advances owing to their prominent stability against thermal aging. However, they suffer from a phase transition from black phase to yellow phase under ambient conditions and serious energ ...

WILEY-V C H VERLAG GMBH2022

Deep defects in InGaN LEDs: modeling the impact on the electrical characteristics

Nicolas Grandjean, Jean-François Carlin, Camille Haller

Deep defects have a fundamental role in determining the electro-optical characteristics and in the efficiency of InGaN light-emitting diodes (LEDs). However, modeling their effect on the electrical characteristics of the LED is not straightforward. ...

SPIE-INT SOC OPTICAL ENGINEERING2022

Inductive Power Transfer System for Auxiliary Power Supply in Medium Voltage Converters

Drazen Dujic, Chengmin Li, Xiaotong Du

Inductive power transfer technology is an attractive solution for medium voltage applications by eliminating the need for high voltage cables or wired connections in general. This paper introduces an inductive power transfer system which has multiple indep ...

2022

Ultra-high voltage, low power and energy recovering electronics for dielectric elastomer actuators

Raphaël Johannes Charles Mottet

Heart failure is a cardiovascular disease affecting between 1 and 2% of the population of developed countries alone - more than 10 million people - with this number bound to increase due to the ageing of the population. This condition starts to develop its ...

EPFL2022

Impact of Embedded Liquid Cooling on the Electrical Characteristics of GaN-on-Si Power Transistors

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Armin Jafari, Luca Nela, Palliyage Srilak Nirmana Perera, Catherine Erine

Wide-Band-Gap semiconductors have enabled considerable miniaturization of power devices, which requires, however, new thermal management solutions to handle the resulting high heat fluxes. Recently, embedded liquid cooling in GaN-on-Si devices was demonstr ...

Institute of Electrical and Electronics Engineers2021

Ultra-High-Voltage (7-kV) Bidirectional Flyback Converter Used to Drive Capacitive Actuators

Yves Perriard, Alexis Boegli, Morgan Almanza, Raphaël Johannes Charles Mottet, Lucas Pniak

Dielectric elastomer actuators (DEAs) have extremely advantageous characteristics such as lightness, compactness, flexibility, and large displacements. However, in order to operate, they can require voltages in the order of several thousands of volts. Thus ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2021

GaN-based power devices: Physics, reliability, and perspectives

Elison de Nazareth Matioli, Luca Nela, Riyaz Mohammed Abdul Khadar

Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the fabrication of power devices. Among the semiconductors for which power devices are already available in the market, GaN has the widest energy gap, the largest critical ...

AIP Publishing2021

On-Chip Fully Integrated Field Emission Arrays for High-Voltage MEMS Applications

Vivek Subramanian

Vacuum-sealed fully integrated diode and triode field emission arrays based on Ti Spindt-type field emitters have been developed in a scalable, CMOS-compatible process directly on Si. Diode characterization in air demonstrates effective vacuum sealing and ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

Ultra High Voltage Switch for Bidirectional DC-DC Converter Driving Dielectric Elastomer Actuator

Yves Perriard, Yoan René Cyrille Civet, Morgan Almanza, Lucas Pniak

Specific applications, such as dielectric elastomer actuators (DEAs) or electroactive polymers, require to switch voltage levels exceeding the ratings of existing semiconductor devices. In low power application, reversible flyback are widely used to supply ...

2020

Four Quadrant Bus-Tie Switch for Protection of Shipboard Power Systems

Drazen Dujic, Gabriele Ulissi

The desire to increase the voltage of DC shipboard power distribution networks to the medium voltage level derives from the pressure to reduce the operating costs of such systems by increasing their efficiency. Solid state bus-tie switches are accepted to ...

IEEE2020

97.4%-Efficient All-GaN Dual-Active-Bridge Converter with High Step-up High-Frequency Matrix Transformer

Elison de Nazareth Matioli, Armin Jafari, Palliyage Srilak Nirmana Perera, Mohammad Samizadeh Nikooytabalvandani

In this work, we demonstrate a state-of-the-art high step-up/down dual-active-bridge (DAB) converter designed with GaN transistors, to achieve a high efficiency and large power-density. A quasi-planar matrix transformer with high step-up/down ratio is demo ...

2020

On Power Scalability of Modular Multilevel Converters: Increasing Current Ratings Through Branch Paralleling

Drazen Dujic, Stefan Milovanovic

The modular multilevel converter (MMC) presented in Figure 1 found its place within highvoltage and medium-voltage (MV) applications owing to the possibility of effortlessly meeting the imposed voltage requirements by stacking the so-called submodules (SMs ...

2020