Publications related to Quantum wire

Heralded Spectroscopy: a new single-particle probe for nanocrystal photophysics

Edoardo Charbon, Claudio Bruschini, Ivan Michel Antolovic, Samuel Burri, Arin Can Ülkü

Semiconductor nanocrystals feature multiply-excited states that display intriguing physics and significantly impact nanocrystal-based technologies. Fluorescence supplies a natural probe to investigate these states. Still, direct observation of multiexciton ...

SPIE2023

Investigation of thermoelectric nanomaterials

David Thomas Osenberg

Thermoelectric conversion remains an active research field in light of its potential to enhance energy efficiency by waste heat recovery in a noise and wear-free manner. Nanostructuring is responsible for most of the recently reported improvements of the ...

EPFL2023

Optoelectronics based on the spin-valley physics of 2D materials

Juan Francisco Gonzalez Marin

Two-dimensional (2D) materials are atomically thin crystals with exceptional mechanical, electrical and optical properties. Their unique characteristics originating from quantum confinement in the vertical dimension have attracted a strong interest for sci ...

EPFL2022

Privacy and Integrity Preserving Computations with CRISP

Jean-Pierre Hubaux, Juan Ramón Troncoso-Pastoriza, Apostolos Pyrgelis, Sylvain Chatel

In the digital era, users share their personal data with service providers to obtain some utility, e.g., access to high-quality services. Yet, the induced information flows raise privacy and integrity concerns. Consequently, cautious users may want to prot ...

USENIX ASSOC2021

Incidence of Quantum Confinement on Dark Triplet Excitons in Carbon Nanotubes

Ferenc Simon

The photophysics of single-wall carbon nanotubes (SWCNTs) is intensively studied due to their potential application in light harvesting and optoelectronics. Excited states of SWCNTs form strongly bound electron-hole pairs, excitons, of which only singlet e ...

2020

Electronic transport across quantum dots in graphene nanoribbons: Toward built-in gap-tunable metal-semiconductor-metal heterojunctions

Oleg Yazyev, Michele Pizzochero, Kristians Cernevics

The success of all-graphene electronics is severely hindered by the challenging realization and subsequent integration of semiconducting channels and metallic contacts. Here, we comprehensively investigate the electronic transport across width-modulated he ...

AMER PHYSICAL SOC2020

Quantized Hall Conductance of a Single Atomic Wire: A Proposal Based on Synthetic Dimensions

Jean-Philippe Brantut

We propose a method by which the quantization of the Hall conductance can be directly measured in the transport of a one-dimensional atomic gas. Our approach builds on two main ingredients: (1) a constriction optical potential, which generates a mesoscopic ...

American Physical Society2019

Ultrathin Junctionless Nanowire FET Model, Including 2-D Quantum Confinements

Farzan Jazaeri

In this paper, we develop an explicit model to predict the dc electrical behavior in ultrathin surrounding gate junctionless (JL) nanowire field-effect transistors (FETs). The proposed model considers 2-D electrical and geometrical confinements of carrier ...

2019

Band and Correlated Insulators of Cold Fermions in a Mesoscopic Lattice

Jean-Philippe Brantut, Thierry Giamarchi, Samuel Häusler

We investigate the transport properties of neutral, fermionic atoms passing through a one-dimensional quantum wire containing a mesoscopic lattice. The lattice is realized by projecting individually controlled, thin optical barriers on top of a ballistic c ...

American Physical Society2018

Impact of Lanthanide Nanomaterials on Photonic Devices and Smart Applications

Jean-Claude Bünzli, Zhenyu Liu

Half a century after its initial emergence, lanthanide photonics is facing a profound remodeling induced by the upsurge of nanomaterials. Lanthanide-doped nanomaterials hold promise for bioapplications and photonic devices because they ally the unmatched a ...

WILEY-V C H VERLAG GMBH2018

Quantum Mechanical Confinement in the Fin Electron-Hole Bilayer Tunnel Field-Effect Transistor

Mihai Adrian Ionescu, Cem Alper, José Luis Padilla de la Torre

Quantum mechanical confinement in electron-hole bilayer tunnel field-effect transistors (EHBTFETs) affects in a substantial way the band-to-band tunneling (BTBT) mechanism that constitutes their operating principle. Field-induced quantization is known to s ...

Ieee-Inst Electrical Electronics Engineers Inc2016

Surface States Transport in Topological Insulator Bi0.83Sb0.17 Nanowires

Jean-Philippe Ansermet

We investigate the transport properties of topological insulator (TI) nanowires. Single-crystal nanowire samples with diameters ranging from 75 nm to 1.1 m are prepared using high frequency liquid phase casting in a glass capillary; cylindrical single crys ...

Springer Verlag2016

Spin and Charge transport in Dirac Materials

Alexander Ronald Hoyer

The digitalization of our world is proceeding with every new technical product placed on the market. By making them smarter, e.g. linking them together and equipping them with sensors, a vast mass of data is collected. Processing and storing this informati ...

EPFL2016

Electrochemical nanostructured biosensors: carbon nanotubes versus conductive and semi-conductive nanoparticles

Giovanni De Micheli, Sandro Carrara, Irene Taurino, Nima Aliakbarinodehi, Gianluca Piccinini

The aim of this work was to demonstrate that various types of nanostructures provide different gains in terms of sensitivity or detection limit albeit providing the same gain in terms of increased area. Commercial screen printed electrodes (SPEs) were func ...

De Gruyter Open Ltd2015

Size control, quantum confinement, and oxidation kinetics of silicon nanocrystals synthesized at a high rate by expanding thermal plasma

Lihao Han

The growth mechanism of silicon nanocrystals (Si NCs) synthesized at a high rate by means of expanding thermal plasma chemical vapor deposition technique are studied in this letter. A bimodal Gaussian size distribution is revealed from the high-resolution ...

Amer Inst Physics2015

Assessment of field-induced quantum confinement in heterogate germanium electron-hole bilayer tunnel field-effect transistor

Mihai Adrian Ionescu, Cem Alper, José Luis Padilla de la Torre

The analysis of quantum mechanical confinement in recent germanium electron-hole bilayer tunnel field-effect transistors has been shown to substantially affect the band-to-band tunneling (BTBT) mechanism between electron and hole inversion layers that cons ...

American Institute of Physics2014

The Role of Quantum Effects on Structural and Electronic Fluctuations in Neat and Charged Water

Michele Ceriotti, Federico Giberti, Michele Parrinello

In this work, we revisit the role of nuclear quantum effects on the structural and electronic properties of the excess proton in bulk liquid water using advanced molecular dynamics techniques. The hydronium ion is known to be a weak acceptor of a hydrogen ...

Amer Chemical Soc2014

Electron mobility extraction in triangular gate-all-around Si nanowire junctionless nMOSFETs with cross-section down to 5 nm

Mihai Adrian Ionescu, Jean-Michel Sallese, Wladyslaw Grabinski, Mohammad Najmzadeh, Matthieu Berthomé

In this paper, we report the first systematic study on electron mobility extraction in equilateral triangular gate-all-around Si nanowire junctionless nMOSFETs with cross-section down to 5 nm. 1 x 10(19) cm(-3) n-type channel doping, 5-20 nm Si nanowire wi ...

Pergamon-Elsevier Science Ltd2014

Bandgap engineering in a nanowire: self-assembled 0, 1 and 2D quantum structures

Anna Fontcuberta i Morral

Inherent to the nanowire morphology is the exciting possibility of fabricating materials organized at the nanoscale in three dimensions. Composition and structure can be varied along and across the nanowire, as well as within coaxial shells. This opens up ...

Elsevier2013

Quantum transport through single atoms and molecules

Klaus Kern, Yi Zhang, Peter Wahl

Experiments on quantum transport in a low temperature scanning tunneling microscope provide the possibility to study atomic and molecular contacts with well-defined electrode-geometry at least for one of the contacts, the surface. Here, we show for a numbe ...

Wiley-V C H Verlag Gmbh2013