Publications related to Die shrink

Towards Scalable Electronics: Synthetic 2D Materials for Large-Area 2D Circuit Integration

In the past decades, a significant increase of the transistor density on a chip has led to exponential growth in computational power driven by Moore's law. To overcome the bottleneck of traditional von-Neumann architecture in computational efficiency, effo ...

EPFL2024

A 0.21-ps FOM Capacitor-Less Analog LDO with Dual-Range Load Current for Biomedical Applications

Mahsa Shoaran, Yasemin Engür

This paper presents an output capacitor-less low-dropout regulator (LDO) with a bias switching scheme for biomedical applications with dual-range load currents. Power optimization is crucial for systems with multiple activation modes such as neural interfa ...

ArXiv2023

Computational Imaging SPAD Cameras

Andrei Ardelean

Vision systems built around conventional image sensors have to read, encode and transmit large quantities of pixel information, a majority of which is redundant. As a result, new computational imaging sensor architectures were developed to preprocess the r ...

EPFL2023

An All-Digital 1 Mbps, 57 pJ/bit Bluetooth Low Energy (BLE) Backscatter ASIC in 65 nm CMOS

James Daniel Rosenthal

We present an all-digital application specific integrated circuit (ASIC) that implements Bluetooth Low Energy (BLE)-compatible backscatter communication. The ASIC was fabricated in a 65 nm CMOS process and occupies an active area of 0.12 mm(2) while consum ...

IEEE2022

Low-Power Artificial Neural Network Perceptron Based on Monolayer MoS2

Aleksandra Radenovic, Andras Kis, Mukesh Kumar Tripathi, Guilherme Migliato Marega, Zhenyu Wang

Machine learning and signal processing on the edge are poised to influence our everyday lives with devices that will learn and infer from data generated by smart sensors and other devices for the Internet of Things. The next leap toward ubiquitous electron ...

2022

Wafer-scale MoS2 with water-vapor assisted showerhead MOCVD

Aleksandra Radenovic, Andras Kis, Mukesh Kumar Tripathi, Mukeshchand Thakur, Michal Daniel Macha, Yanfei Zhao, Hyungoo Ji, Jing Zhang

Among numerous thin film synthesis methods, metalorganic chemical vapor deposition performed in a showerhead reactor is the most promising one for broad use in scalable and commercially adaptable two-dimensional material synthesis processes. Adapting the m ...

ROYAL SOC CHEMISTRY2022

High-Performance CMOS SPAD-Based Sensors for Time-of-Flight PET Applications

Francesco Gramuglia

Detecting light, photon by photon, has been possible since the 1930s, with the invention of the photomultiplier tube (PMT). However, it is only since the 1970s, that solid-state single-photon detectors have emerged and only since 2003 that a new technology ...

EPFL2022

Development of a Data Concentrator ASIC for the High Luminosity upgrade of the CMS Outer Tracker detector with tracking trigger

Simone Scarfì

With the increasing capabilities of the microelectronics technology, future particle detectors in high energy physics will be able to yield high-level features that are not only simple geometrical positions or energy measurement in the silicon sensors used ...

EPFL2021

Diversifying Databases of Metal Organic Frameworks for High-Throughput Computational Screening

Berend Smit, Sauradeep Majumdar, Seyedmohamad Moosavi, Daniele Ongari, Kevin Maik Jablonka

By combining metal nodes and organic linkers, an infinite number of metal organic frameworks (MOFs) can be designed in silico. Therefore, when making new databases of such hypothetical MOFs, we need to ensure that they not only contribute toward the growth ...

AMER CHEMICAL SOC2021

Exploring ferroelectricity in HfO2-based thin films by tackling application-relevant challenges

Matteo Cavalieri

Ferroelectric materials offer a broad range of application-relevant properties, including spontaneous polarization switchable by electric field. Archetypical representatives of this class of materials are perovskites, currently used in applications ranging ...

EPFL2021

Towards Deeply Scaled 3D MPSoCs with Integrated Flow Cell Array Technology

David Atienza Alonso, Marina Zapater Sancho, Alexandre Sébastien Julien Levisse, Mohamed Mostafa Sabry Aly, Halima Najibi

Deeply-scaled three-dimensional (3D) Multi-Processor Systems-on-Chip (MPSoCs) enable high performance and massive communication bandwidth for next-generation computing. However, as process nodes shrink, temperature-dependent leakage dramatically increases, ...

2020

A Low-Power 9-Bit 222 MS/s Asynchronous SAR ADC in 65 nm CMOS

Yusuf Leblebici, Firat Çelik, Ayça Akkaya

This paper presents a 9-bit 222 MS/s low-power asynchronous single-bit/cycle successive approximation register (SAR) ADC. The SAR ADC combines techniques such as asynchronous clocking, binary-weighted custom-designed capacitive DAC with small unit capacito ...

IEEE2020

Silicon Nitride Integrated Nonlinear Photonics

Junqiu Liu

Recently, microresonator-based dissipative Kerr soliton frequency combs ( "soliton microcomb " ) have emerged as miniaturized optical frequency combs. So far, soliton microcombs have been realized in many CMOS-compatible material platforms including silico ...

EPFL2020

Understanding the diversity of the metal-organic framework ecosystem

Berend Smit, Seyedmohamad Moosavi, Daniele Ongari, Kevin Maik Jablonka, Peter George Boyd, Yongjin Lee

Millions of distinct metal-organic frameworks (MOFs) can be made by combining metal nodes and organic linkers. At present, over 90,000 MOFs have been synthesized and over 500,000 predicted. This raises the question whether a new experimental or predicted s ...

Nature Research2020

Energy- and Cost-Efficient VLSI DSP Systems Design with Approximate Computing

Reza Ghanaatian Jahromi

Technology scaling has progressed to enable integrated circuits with extremely high density enabling systems of tremendous complexity with manageable power consumption. With the continuation of Moore's law for many years, electronic chips have been able to ...

EPFL2020

Subthreshold Mismatch in Nanometer CMOS at Cryogenic Temperatures

Edoardo Charbon, Fabio Sebastiano

Cryogenic device models are essential for the reliable design of the cryo-CMOS electronic interface necessary to build future large-scale quantum computers. This paper reports the characterization of the drain-current mismatch of NMOS and PMOS devices fabr ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

Frequency-scalable fabrication process flow for lithium niobate based Lamb wave resonators

Luis Guillermo Villanueva Torrijo, Muhammad Faizan

In this paper, we demonstrate the fabrication and characterization of lithium niobate (LN) based Lamb wave mode (S0 and SH0) resonators that address the stringent requirements of RF filtering for modern communication systems. The devices consist of a 400 n ...

IOP PUBLISHING LTD2020

FOSS EKV2.6 Verilog-A Compact MOSFET Model

Christian Enz, Jean-Michel Sallese, Wladyslaw Grabinski, Eric Vittoz, François Krummenacher, Matthias Bucher, Christophe Lallement

The EKV2.6 MOSFET compact model has had a considerable impact on the academic and industrial community of analog integrated circuit design, since its inception in 1996. The model is available as a free open-source software (FOSS) tool coded in Verilog-A. T ...

IEEE2019

Performance improvement of chip-level CMOS-integrated ReRAM cells through material optimization

Elmira Shahrabi, Thomas La Grange, Yusuf Leblebici, Tugba Demirci

The integration of the resistive random access memory (ReRAM) with CMOS logic circuitry provides a solution to scaling limitations, and offers promising candidates for use in next generation computing applications. It is challenging to realize a reliable, ...

ELSEVIER SCIENCE BV2019

Voltage References for the Ultra-Wide Temperature Range from 4.2 K to 300 K in 40-nm CMOS

Edoardo Charbon, Fabio Sebastiano

This paper presents a family of voltage references in standard 40-nm CMOS that exploits the temperature dependence of dynamic-threshold MOS, NMOS and PMOS transistors in weak inversion to enable operation over the ultra-wide temperature range from 4.2 K to ...

IEEE2019