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Related publications (32)

Active Guard Ring Characterization for Smart Power ICs

Maher Kayal, Jean-Michel Sallese, Camillo Stefanucci, Pietro Buccella

This paper shows SPICE simulation results of active guard ring structures which are typically employed in Smart Power ICs. Active guard rings act as barriers limiting the flow of minority carriers injected into the substrate toward sensitive circuits. The ...

Ieee2016

Analysis of Substrate Currents Propagation in HVCMOS technology

Maher Kayal, Jean-Michel Sallese, Camillo Stefanucci, Pietro Buccella

This work reports the results of a layout-aware substrate modeling methodology for HVCMOS technologies. The model relies on the extraction of parasitic substrate network to simulate with circuit software parasitic lateral NPN bipolar transistors with multi ...

IEEE2016

Identifying Fundamental Limitations in Halide Perovskite Solar Cells

Michael Graetzel, Shaik Mohammed Zakeeruddin, Chenyi Yi, Nripan Mathews

The temperature dependence of the principal photovoltaic parameters of perovskite photovoltaics is studied. The recombination activation energy is in good agreement with the perovskite's bandgap energy, thereby placing an upper bound on the open-circuit vo ...

Wiley-Blackwell2016

Experimental determination of the bulk Rashba parameters in BiTeBr

Helmuth Berger, Arnaud Magrez, Philippe Bugnon

Shubnikov-de Haas (SdH) oscillations, Hall effect, and optical reflectance (R(omega)) measurements have been performed on single crystals of BiTeBr. Under magnetic fields up to 32 tesla and at temperatures as low as 0.4K, the SdH data shows a single oscill ...

IOP Publishing - EPL Association2016

Quantum properties of charged ferroelectric domain walls

Nava Setter, Alexander Tagantsev

We consider the properties of charged domain walls in ferroelectrics as a quantum problem. This includes determination of self-consistent attracting 1D potential for compensating charge carriers, the number and positions of discrete energy levels in this p ...

Amer Physical Soc2015

Assessment of Pseudo-Bilayer Structures in the Heterogate Germanium Electron-Hole Bilayer Tunnel Field-Effect Transistor

Mihai Adrian Ionescu, Cem Alper, José Luis Padilla de la Torre

We investigate the effect of pseudo-bilayer configurations at low operating voltages (

American Institute of Physics2015

Time-resolved X-ray and Optical Studies of Metalloproteins and Iridium Complexes

Mahsa Silatani

A wide variety of physicochemical processes at a molecular level, in particular charge or energy transfer, electronic and vibrational relaxation, are at the origin of biological functionality of proteins and organometallic compounds. The work reported in t ...

EPFL2015

First-principles determination of defect energy levels through hybrid density functionals and GW

Alfredo Pasquarello, Wei Chen

In this topical review, we discuss recent progress in electronic-structure methods for calculating defect energy levels in semiconductors and insulators. We concentrate mainly on two advanced electronic-structure schemes, namely hybrid density functional t ...

Institute of Physics2015

Arsenic related defect states resonant with the semiconductor conduction band at the In0.53Ga0.47As/oxide interface: A density functional study

Alfredo Pasquarello, Giacomo Francesco Leonardo Miceli, Davide Colleoni

An arsenic related defect at the In0.53Ga0.47As/oxide interface is studied through density functional theory. This defect corresponds to an As-As timer which transforms into two doubly occupied As dangling bonds upon capture of two electrons. The defect ch ...

Elsevier2015

Spice-compatible modeling of high injection and propagation of minority carriers in the substrate of Smart Power ICs

Maher Kayal, Jean-Michel Sallese, Camillo Stefanucci, Pietro Buccella

Classical substrate noise analysis considers the silicon resistivity of an integrated circuit only as doping dependent besides neglecting diffusion currents as well. In power circuits minority carriers are injected into the substrate and propagate by drift ...

Elsevier2015

Spice Simulation of Passive Protection in Smart Power ICs

Maher Kayal, Jean-Michel Sallese, Camillo Stefanucci, Pietro Buccella

When designing in Smart Power technologies, TCAD simulations are mandatory to design effective passive protections against parasitic couplings due to minority carriers. The objective of this paper is to propose a spice-based approach to characterize electr ...

Ieee2015

Polarization charge as a reconfigurable quasi-dopant in ferroelectric thin films

Nava Setter, Alexander Tagantsev, Tomas Sluka, Arnaud Robert André Crassous

Impurity elements used as dopants are essential to semiconductor technology for controlling the concentration of charge carriers. Their location in the semiconductor crystal is determined during the fabrication process and remains fixed. However, another p ...

Nature Publishing Group2015

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