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Related publications (30)

Instability of p-i-n perovskite solar cells under reverse bias

Christophe Ballif, Quentin Thomas Jeangros, Florent Sahli, Arnaud Walter, Daniel Anthony Jacobs, Fan Fu, Ricardo Augusto Zanotto Razera, Sylvain Nicolay, Peter Joseph Fiala, Laura Ding, Chien-Jen Yang, Marion Solange Madeleine Dussouillez

Partial shading can trigger permanent damage in photovoltaic modules because the illuminated solar cells drive the shaded cells into reverse bias. Under reverse bias conditions, perovskite solar cells have been shown to degrade quickly due to processes tha ...

Royal Society of Chemistry2020

Polarity-Controllable Devices and Circuits for Doping-Free 2D Electronics

Giovanni Vincenzo Resta

The growth of information technology has been sustained by the miniaturization of Complementary Metal-Oxide-Semiconductor (CMOS) Field-Effect Transistors (FETs), with the number of devices per unit area constantly increasing, as exemplified by Mooreâ s la ...

EPFL2019

High performance Fully-vertical GaN-on-Si power MOSFETs

Elison de Nazareth Matioli, Chao Liu, Reza Soleiman Zadeh Ardebili

We report the first demonstration of fully-vertical power MOSFETs on 6.6-μm-thick GaN grown on a 6-inch Si substrate by metal-organic chemical vapor deposition (MOCVD). A robust fabrication method was developed based on a selective and local removal of the ...

IEEE2019

Fast-switching Tri-Anode Schottky Barrier Diodes for monolithically integrated GaN-on-Si power circuits

Elison de Nazareth Matioli, Jun Ma, Luca Nela, Georgios Kampitsis

Tri-Anode GaN Schottky Barrier Diodes (SBDs) have recently shown excellent DC performance with low turn-on voltage and large breakdown thanks to their 3D contact structure around the two-dimensional electron gas (2DEG) channel. However, the 3D nature of th ...

Institute of Electrical and Electronics Engineers2020

Devices and Circuits Using Novel 2-D Materials: A Perspective for Future VLSI Systems

Giovanni De Micheli, Giovanni Vincenzo Resta, Pierre-Emmanuel Julien Marc Gaillardon

Here, we review the most recent developments in the field of 2-D electronics. We focus first on the synthesis of 2-D materials, discussing the different growth techniques currently available and assessing their strengths and weaknesses. Moreover, we descri ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2019

Measurement of Large-Signal Coss and Coss Losses of Transistors Based on Nonlinear Resonance

Elison de Nazareth Matioli, Armin Jafari, Palliyage Srilak Nirmana Perera

In this letter, we present a new measurement technique to evaluate the large-signal output capacitance ( COSS ) of transistors as well as the COSS energy dissipation ( EDISS ), based on the nonlinear resonance between a known inductor and the output capaci ...

2019

Triboelectric‐TFT Flip‐Flop for Bistable Latching of Dielectric Elastomer Actuators

Danick Briand, Herbert Shea, Rubaiyet Iftekharul Haque, Alexis Pierre Henri Marette, Xiaobin Ji, Ronan Julien Hinchet

A high‐voltage flip‐flop combining two self‐powered soft sensors with a flexible high‐voltage thin film transistor (HVTFT) is reported, and is used to electrically latch dielectric elastomer actuators (DEAs) in zero and high‐strain states. Two touch‐actuat ...

2019

Comprehensive Analysis and Design of a Quasi Two-Level Converter Leg

Drazen Dujic, Stefan Milovanovic

Quasi two-level operation of voltage source converters, intended to operate either within high/medium voltage DC networks or low output frequency applications, has caught the attention of both academia and industry. Sequential insertion of the so-called su ...

2019

An electromagnetic actuator

Herbert Shea, Juan José Zarate

The present invention concerns an electromagnetic actuator (2) for a haptic display (1). The actuator (2) comprises: a) a first, movable permanent magnetic element (5), the first magnetic element (5) comprising a first latching layer facing side, a second ...

2018

GaN-on-Si Quasi-Vertical Power MOSFETs

Elison de Nazareth Matioli, Riyaz Mohammed Abdul Khadar, Chao Liu

We demonstrate the first GaN vertical transistor on silicon, based on a 6.7-mu m-thick n-p-n heterostructure grown on 6-inch silicon substrate by metal organic chemical-vapor deposition. The devices consist of trench-gate quasi-vertical metal-oxide-semicon ...

Institute of Electrical and Electronics Engineers2018

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