Publications related to Active rectification

Miniaturised, Wireless and Distributed Neural Interface Toward Cortical Visual Prosthesis

Over the last decades, implantable neural interfaces have been extensively explored and effectively deployed to address neurological and mental health disorders. The existing solutions present several limitations. Firstly, the physical size of the implanta ...

EPFL2023

Multiphysics model for assessing photoelectrochemical phenomena under concentrated irradiation

Sophia Haussener, Isaac Thomas Holmes-Gentle, Franky Esteban Bedoya Lora

A multiphysics model was developed for a photoelectrochemical (PEC) cell at the device level to simulate water splitting operating under concentrated irradiation (between 50 to 600 kW m−2). The 2D model couples charge, heat, mass, photon, and momentum tran ...

2023

A dc/dc converter and a method for operating a dc/dc converter

Drazen Dujic, Jakub Kucka

The present invention relates to a DC/DC converter (1) for transferring an active power between two DC subsystems (5, 6) comprising: - a first converter stage (3) and a second converter stage (4) both configured to be selectively operated as an active inve ...

2022

Active-Device Losses in Resonant Power Converters: A Case Study with Class-E Inverters

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Armin Jafari, Palliyage Srilak Nirmana Perera, Jessy Anthony Ançay

Recent research has reported an undesirable OFF-state loss in high-frequency soft-switching power converters, such as resonant converters. This loss is attributed to a hysteresis loss related to the charging-discharging process of the output capacitance of ...

IEEE2021

Deexcitation Characterization for Power Supply Protection in DC Shipboard Power Systems

Drazen Dujic, Seongil Kim

The deexcitation of a synchronous machine has been used for the protection of the power supply based on a diode rectifier in marine dc power distribution networks. The fault current from the generator can be eliminated with the protection method utilizing ...

IEEE2020

Protection Coordination in Marine DC Power Distribution Networks

Seongil Kim

The increasing penetration of renewable energy sources, energy storage systems (ESSs), and DC loads has opened the door to DC technology to pave its way into future grids. The shift has been more obvious in the marine domain supported by track records of i ...

EPFL2020

AlGaN/GaN Nanowires: from Electron Transport to RF Applications

Giovanni Santoruvo

Gallium Nitride (GaN) and all III-Nitride compounds have revolutionized the world with the development of the blue light emitting diode (LED). In addition, GaN-based epi-structures, such as AlGaN/GaN, enable the fabrication of high electron mobility transi ...

EPFL2020

Broadband Zero-Bias RF Field-Effect Rectifiers Based on AlGaN/GaN Nanowires

Elison de Nazareth Matioli, Giovanni Santoruvo, Mohammad Samizadeh Nikooytabalvandani

Microwave zero-bias rectifiers are fast devices capable of rectifying RF signals without applied bias, which have applications ranging from RF power detection to THz imaging systems. Here we present gated nanowire field-effect rectifiers (NW-FERs) fabricat ...

2019

A Dual-Edge Pulsewidth Modulator for Fast Dynamic Response DC-DC Converters

Maher Kayal, Adil Koukab, Giacomo Ripamonti, Stefano Michelis, Federico Faccio

Voltage regulator modules are dc-dc converters that power modern microprocessors. They must exhibit a fast dynamic response, in order to achieve satisfactory regulation performance in spite of the rapid load current variations. The pulsewidth modulator is ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2019

MVDC Supply Technologies for Marine Electrical Distribution Systems

Drazen Dujic, Francisco Daniel Freijedo Fernández, Uzair Javaid, Wim Van der Merwe

The increase in the popularity of the medium voltage dc (MVDC) electrical distribution, as a possible evolution of the medium voltage ac (MVAC) electrical distribution for the ship on-board power systems, arises a need for a comparative evaluation and demo ...

2018

MoS2/VO2 vdW heterojunction devices: Tunable rectifiers, photodiodes and field effect transistors

Olivier Martin, Mihai Adrian Ionescu, Arnaud Magrez, Andreas Schueler, Anna Krammer, Emanuele Andrea Casu, Chen Yan, Nicolò Oliva

In this work we report a new class of ultra-thin film devices based on n-n van der Waals (vdW) heteroj unctions of MoS2 and VO2, which show remarkable tunable characteristics. The favorable band alignment combined with the sharp and clean vdW interface det ...

2018

Transient Current Technique characterization of bonded interfaces for monolithic silicon radiation detectors

Jacopo Bronuzzi

This thesis aims at demonstrating a novel technique for the characterization of interfaces obtained by a CMOS-compatible Surface Activated Bonding (SAB) process between silicon wafers. This enables the optimization of the two main components of monolithic ...

EPFL2018

Bolometric detection of ferromagnetic resonance in YIG slab

Jean-Philippe Ansermet, Haiming Yu, Sa Tu, Marcin Bialek, Yao Zhang

The resistance of the Pt bar deposited on the YIG slab was monitored while the magnetic field was ramped through the ferromagnetic resonance with the YIG slab facing a coplanar waveguide resonator excited at 4.3 GHz excitation. The resistance change provid ...

Elsevier2017

Van der Waals MoS2/VO2 heterostructure junction with tunable rectifier behavior and efficient photoresponse

Mihai Adrian Ionescu, Olivier Martin, Arnaud Magrez, Andreas Schueler, Igor Stolichnov, Anna Krammer, Teodor Rosca, Emanuele Andrea Casu, Nicolò Oliva, Chen Yan

Junctions between n-type semiconductors of different electron affinity show rectification if the junction is abrupt enough. With the advent of 2D materials, we are able to realize thin van der Waals (vdW) heterostructures based on a large diversity of mate ...

Nature Research2017

Ultra-short-term prediction intervals of photovoltaic AC active power

Jean-Yves Le Boudec, Mario Paolone, Dimitri Torregrossa, Enrica Scolari

The paper describes a heuristic method for the ultra-short-term computation of prediction intervals (PIs) for photovoltaic (PV) power generation. The method allows for directly forecasting the AC active power output of a PV system by simply extracting info ...

IEEE2016

Gas Turbine: Optimization of Energy Production and High Efficiency by Using Power Electronics

Alfred Rufer, Aziza Benaboud

The use of gas turbines in the power generation industry has been increasing. Their demand represents more than 50% of the world market of thermal power plants. Electric power generators using gas turbines as power sources are connected to the turbines thr ...

Elsevier Science Bv2016

Synthesis, Morphological, and Electro-optical Characterizations of Metal/Semiconductor Nanowire Heterostructures

Anna Fontcuberta i Morral, Sonia Conesa Boj, Heidi Andrea Potts

In this letter, we demonstrate the formation of unique Ga/GaAs/Si nanowire heterostructures, which were successfully implemented in nanoscale light-emitting devices with visible room temperature electroluminescence. Based on our recent approach for the int ...

American Chemical Society2016

A Multiport Isolated DC-DC Converter

Drazen Dujic, Yan-Kim Tran

This paper presents a multi-port isolated DC-DC converter for DC applications. A three-port structure is presented, characterized with full bidirectional power flow and simple control. Galvanic isolation is achieved by means of a multi-winding medium frequ ...

IEEE2016

A Low Power On-Chip Class-E Power Amplifier For Remotely Powered Implantable Sensor Systems

Catherine Dehollain, Enver Gürhan Kilinç, Kerim Türe

This paper presents a low power fully integrated class-E power amplifier and its integration with remotely powered sensor system. The class-E power amplifier is suitable solution for low-power applications due to its high power efficiency. However, the req ...

Spie-Int Soc Optical Engineering2015

Shallow donor and deep DX-like center in InAlN layers nearly lattice-matched to GaN

Nicolas Grandjean, Jean-François Carlin, Marcel Py, Lorenzo Lugani

Nonintentionally doped 200-nm-thick In0.16Al0.84N/n(+)-GaN samples were grown by metal-organic vapor phase epitaxy and used for the electrical characterization of InAlN. In the temperature range 180-400 K, the forward current of Schottky diodes is dominate ...

Amer Physical Soc2014