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Related publications (32)

Diamond on GaN integration for power semiconductor devices with efficient thermal management

Reza Soleiman Zadeh Ardebili

The international actions against global warming demands reductions in carbon emission and more efficient use of energy. Energy efficiency in the conversion and use of electricity, as an important form of energy in the modern life, has strong environmental ...

EPFL2021

Laser soliton microcombs heterogeneously integrated on silicon

Tobias Kippenberg, Rui Ning Wang, Junqiu Liu, Wenle Weng, Zeyu Zhang, Chao Xiang, Zeyu Zhang

Silicon photonics enables wafer-scale integration of optical functionalities on chip. Silicon-based laser frequency combs can provide integrated sources of mutually coherent laser lines for terabit-per-second transceivers, parallel coherent light detection ...

American Association for the Advancement of Science2021

GaN-based power devices: Physics, reliability, and perspectives

Elison de Nazareth Matioli, Luca Nela, Riyaz Mohammed Abdul Khadar

Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the fabrication of power devices. Among the semiconductors for which power devices are already available in the market, GaN has the widest energy gap, the largest critical ...

AIP Publishing2021

III-nitride photonic cavities

Nicolas Grandjean, Raphaël Butté

Owing to their wide direct bandgap tenability, III-nitride (III-N) compound semiconductors have been proven instrumental in the development of blue light-emitting diodes that led to the so-called solid-state lighting revolution and blue laser diodes that a ...

WALTER DE GRUYTER GMBH2020

Highly spatially resolved mapping of the piezoelectric potentials in InGaN quantum well structures by off-axis electron holography

Victor Carle Adrien Boureau

The internal fields in 2.2nm thick InGaN quantum wells in a GaN LED structure have been investigated by using aberration-corrected off-axis electron holography with a spatial resolution of better than 1nm. To improve the spatial resolution, different types ...

2020

Polariton relaxation and polariton nonlinearities in nonresonantly cw-pumped III-nitride slab waveguides

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Joachim Armand Simonne Ciers, Gordon Jens Callsen

Polariton lasers are mostly based on planar cavities. Here we focus on an alternative configuration with slab waveguide modes strongly coupled to excitons confined in GaN/AlGaN quantum wells. We study experimentally and theoretically polariton relaxation a ...

2020

Frequency Division Using a Soliton-Injected Semiconductor Gain-Switched Frequency Comb

Tobias Kippenberg, Junqiu Liu, Wenle Weng

By injecting a soliton microcomb into a semiconductor laser that is driven by a sinusoidal current at the subharmonic frequencies of the soliton rate, we demonstrate broadband gain-switched frequency comb generation and low-noise microwave synthesis. (C) 2 ...

IEEE2020

Conformal Passivation of Multi-Channel GaN Power Transistors for Reduced Current Collapse

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Halil Kerim Yildirim, Luca Nela, Catherine Erine, Kai Cheng

Multi-channel power devices, in which several AlGaN/GaN layers are stacked to achieve multiple two-dimensional electron gases (2DEGs), have recently led to a significant increase in the device conductivity while maintaining high breakdown voltage, resultin ...

Institute of Electrical and Electronics Engineers2020

AlGaN/GaN Nanowires: from Electron Transport to RF Applications

Giovanni Santoruvo

Gallium Nitride (GaN) and all III-Nitride compounds have revolutionized the world with the development of the blue light emitting diode (LED). In addition, GaN-based epi-structures, such as AlGaN/GaN, enable the fabrication of high electron mobility transi ...

EPFL2020

High-Power 760 nm VECSEL Based on Quantum Dot Gain Mirror

Elyahou Kapon, Grigore Suruceanu, Alexandru Mereuta, Andrei Caliman, Nicolas Chevalier

We report high-power second-harmonic generation of 760 nm laser light from optically-pumped vertical-external-cavity surface-emitting laser based on quantum dot active medium. The laser generates 1.2 W in fundamental transverse mode with fixed linear polar ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

Progress in Violet Light-Emitting Diodes Based on ZnO/GaN Heterojunction

Eric Feltin, Mauro Mosca

Progress in light-emitting diodes (LEDs) based on ZnO/GaN heterojunctions has run into several obstacles during the last twenty years. While both the energy bandgap and lattice parameter of the two semiconductors are favorable to the development of such de ...

MDPI2020

Routes for Efficiency Enhancement in Fluorescent TADF Exciplex Host OLEDs Gained from an Electro-Optical Device Model

Frank Nüesch, Beat Ruhstaller, Markus Regnat

Fluorescence-based organic light-emitting diodes (OLEDs) using thermally activated delayed fluorescence (TADF) have increasingly attracted attention in research and industry. One method to implement TADF is based on an emitter layer composed of an exciplex ...

WILEY2020

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