Publications related to Mercury cadmium telluride

Single-Photon Avalanche Diode Image Sensors for Harsh Radiation Environments

The space industry has experienced substantial growth in recent years, leading to rapid advancements in space exploration and space-based technologies. Consequently, the study of electronics and sensor performance in extreme environments has become crucial ...

EPFL2024

Shortwave Infrared-Sensitive, Narrowband Organic Upconversion Devices with a Gain

Wei-Hsu Hu

Sensing and imaging of light in the shortwave infrared (SWIR) range is increasingly used in various fields, including bio-imaging, remote sensing, and semiconductor process control. SWIR-sensitive organic photodetectors (OPDs) are promising because organic ...

EPFL2024

Voltage-driven Chemical Reactions Enable the Synthesis of Tunable Liquid Ga – Metal Nanoparticles

Raffaella Buonsanti, Anna Loiudice, Pascal Alexander Schouwink, Krishna Kumar, Coline Marie Agathe Boulanger, Valery Okatenko, Alexander Nicolas Chen

Nanosized particles of liquid metals are emerging materials which hold promise for applications spanning from microelectronics to catalysis. Yet, the knowledge of their chemical reactivity is largely unknown. Here, we study the reactivity of liquid Ga and ...

2023

Chemical Trend of Nonradiative Recombination in Cu(In,Ga)Se2 Alloys

Stefano Falletta

Nonradiative recombination in Cu(In,Ga)Se2 (CIGS) solar cells has long been attributed to the antisite defects MCu (M = In, Ga), but the underlying mechanism is still elusive. Using rigorous first-principles calculations, we demonstrate that the antisites ...

American Physical Society (APS)2023

Colloidal quantum dot photodetectors with 10-ns response time and 80% quantum efficiency at 1,550 nm

Olivier Ouellette

Fast and sensitive infrared (IR) photodetection is of interest for depth imaging that is fundamental to machine vision, augmented reality, and autonomous driving. Colloidal quantum dots (CQDs) are appealing candidates for this goal: in contrast with III-V ...

ELSEVIER2021

Fabrication of Single-Crystalline InSb-on-Insulator by Rapid Melt Growth

Anna Fontcuberta i Morral, Nicholas Paul Morgan, Heera Menon

InSb has the smallest bandgap and highest electron mobility among III-V semiconductors and is widely used for photodetectors and high-frequency electronic applications. Integration of InSb directly on Si would drastically reduce the fabrication cost and en ...

Wiley2021

Cd-113 Solid-State NMR at 21.1 T Reveals the Local Structure and Passivation Mechanism of Cadmium in Hybrid and All-Inorganic Halide Perovskites

David Lyndon Emsley, Dominik Józef Kubicki, Albert Hofstetter, Daniel Prochowicz, Brennan James Walder

Cadmium doping has recently emerged as an efficacious strategy for defect suppression and band gap tuning in hybrid as well as all-inorganic halide perovskites. However, the cadmium speciation in these materials is unknown. Here, we use high-field cadmium- ...

2020

Formamidinium-Based Dion-Jacobson Layered Hybrid Perovskites: Structural Complexity and Optoelectronic Properties

Michael Graetzel, Shaik Mohammed Zakeeruddin, Ursula Röthlisberger, Wolfgang Richard Tress, Jovana Milic, Marko Mladenovic, Ulf Anders Hagfeldt, Mohammad Ibrahim Dar, Amita Ummadisingu, Yang Li, Paramvir Ahlawat, Brian Irving Carlsen, Farzaneh Jahanbakhshi, Algirdas Ducinskas, Yang Li

Layered hybrid perovskites have emerged as a promising alternative to stabilizing hybrid organic-inorganic perovskite materials, which are predominantly based on Ruddlesden-Popper structures. Formamidinium (FA)-based Dion-Jacobson perovskite analogs are de ...

2020

Impact of defects on Auger recombination in c-plane InGaN/GaN single quantum well in the efficiency droop regime

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Yixing Chen, Gwénolé Jean Jacopin, Wei Liu, Camille Haller, Thomas Fjord Kjaersgaard Weatherley

We study the impact of non-radiative defects on Auger recombination in c-plane InGaN/GaN single quantum wells (SQWs) in the efficiency droop regime using high injection time-resolved photoluminescence. The defect density in the SQW is controlled by tuning ...

AMER INST PHYSICS2020

Shape memory polymer resonators as highly sensitive uncooled infrared detectors

Herbert Shea, Luis Guillermo Villanueva Torrijo, Tom Larsen, Juan José Zarate, Ulas Adiyan

Uncooled infrared detectors have enabled the rapid growth of thermal imaging applications. These detectors are predominantly bolometers, reading out a pixel’s temperature change due to infrared radiation as a resistance change. Another uncooled sensing met ...

Nature Research2019

Exploiting supramolecular assemblies for filterless ultra-narrowband organic photodetectors with inkjet fabrication capability

Frank Nüesch, Roland Hany, Jakob Heier, Surendra Babu Anantharaman, Matthias Diethelm

Narrowband photodetectors are useful for a myriad of applications involving color discrimination as well as biological imaging and machine vision. Prevalent devices use broadband light absorbing materials in conjunction with electric (charge collection nar ...

Royal Society of Chemistry2019

Carrier Lifetimes and Recombination Pathways in Metal-Organic Frameworks

Olga Syzgantseva

Understanding the excited-state charge carrier relaxation in metal-organic frameworks (MOFs) and revealing ways to alternate its rate are of primary importance for the development of novel hybrid photoactive materials with sufficiently long carrier lifetim ...

AMER CHEMICAL SOC2019

Tailored-Potential Semiconductor Quantum Nanostructures Grown in Inverted Pyramids

Mikhail Lazarev

We have focused on the ability to tune the aluminum (Al) content of the AlGaAs alloy along the growth direction in inverted pyramids (by MOVPE), thus tailoring the potential along a QWR nanostructure. Three parabolic-potential QDs (PQDs) of different poten ...

EPFL2019

Ultrafast carrier dynamics in III-nitride nanostructures and LED quantum efficiency

Wei Liu, Wei Liu

Since the seminal report about the first Candela- class-brightness InGaN blue light- emitting diodes (LEDs) by Shuji Nakamura et al. in 1994, III-nitride semiconductors have been one of the most important platforms for optoelectronic devices. The achieve ...

EPFL2019

Utilizing electromagnetically induced transparency in InAs quantum dots for all-optical transistor design

Hamed Sattari

We propose a multilayer medium with semiconductor quantum dot nano-structures as a defect layer for all-optical control of the 1.55 mu m probe beam. The effect of the coupling field and incoherent pump on absorption and dispersion properties of the quantum ...

Optical Soc Amer2017

CMOS-Compatible PureGaB Ge-on-Si APD Pixel Arrays

Edoardo Charbon, Mahdi Aminian

Pure gallium and pure boron (PureGaB) Ge-on-Si photodiodes were fabricated in a CMOS compatible process and operated in linear and avalanche mode. Three different pixel geometries with very different area-to-perimeter ratios were investigated in linear arr ...

Ieee-Inst Electrical Electronics Engineers Inc2016

Carrier-density-dependent recombination dynamics of excitons and electron-hole plasma in m-plane InGaN/GaN quantum wells

Nicolas Grandjean, Benoît Marie Joseph Deveaud, Raphaël Butté, Gwénolé Jean Jacopin, Wei Liu

We study the carrier-density-dependent recombination dynamics in m-plane InGaN/GaN multiple quantum wells in the presence of n-type background doping by time-resolved photoluminescence. Based on Fermi's golden rule and Saha's equation, we decompose the rad ...

Amer Physical Soc2016

Cadmium accumulation in six common plant species associated with soils containing high geogenic cadmium concentrations at Le Gurnigel, Swiss Jura Mountains

François Gillet

The uptake of cadmium (Cd) was analyzed for six different perennial plant species growing in a wooded pasture of the Swiss Jura Mountains, where the soils are geogenically enriched in Cd (4.58 mg.kg(-1) on average (n = 36); maximal value: 16.3 mg.kg(-1)). ...

Elsevier Science Bv2015

Modulation Doping of GaAs/AlGaAs Core-Shell Nanowires With Effective Defect Passivation and High Electron Mobility

Anna Fontcuberta i Morral, Federico Matteini, Fauzia Jabeen, Alberto Casadei, Sonia Conesa Boj, Francesca Amaduzzi

Reliable doping is required to realize many devices based on semiconductor nanowires. Group IIIV nanowires show great promise as elements of high-speed optoelectronic devices, but for such applications it is important that the electron mobility is not comp ...

American Chemical Society2015

Optical and transport properties of GaN/(Al,Ga)N heterostructures in prospect of infrared unipolar devices

Etienne François Olivier Giraud

Over the past decade, a growing interest appeared for III-nitride semiconductors, in view of their potential applications in intersubband (ISB) devices. If these materials are nowadays famous, particularly for having revolutionized domestic lighting thanks ...

EPFL2015