High-κ dielectric

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Related publications (28)

Strained crystalline nanomechanical resonators with quality factors above 10 billion

Tobias Kippenberg, Sergey Fedorov, Alberto Beccari, Nils Johan Engelsen

In strained mechanical resonators, the concurrence of tensile stress and geometric nonlinearity dramatically reduces dissipation. This phenomenon, called dissipation dilution, is employed in mirror suspensions of gravitational-wave interferometers and at t ...

NATURE PORTFOLIO2022

Low-Loss Anisotropic Image Polaritons in van der Waals Crystal alpha-MoO3

Sergejs Boroviks

Orthorhombic molybdenum trioxide (alpha-MoO3), a newly discovered polaritonic van der Waals crystal, is attracting significant attention due to its strongly anisotropic mid-infrared phonon-polaritons. At the same time, coupling of polariton with its mirror ...

WILEY-V C H VERLAG GMBH2022

Near-field probing of image phonon-polaritons in hexagonal boron nitride on gold crystals

Sergejs Boroviks

Near-field mapping has been widely used to study hyperbolic phonon-polaritons in van der Waals crystals. However, an accurate measurement of the polaritonic loss remains challenging because of the inherent complexity of the near-field signal and the substr ...

AMER ASSOC ADVANCEMENT SCIENCE2022

Polysiloxanes Modified with Different Types and Contents of Polar Groups: Synthesis, Structure, and Thermal and Dielectric Properties

Holger Frauenrath, Yauhen Sheima, Yulia Yuts

Polymers with high dielectric permittivity are promising for the construction of next-generation transducers and energy storage devices with improved energy density. Here, we report the synthesis, glass-transition temperature (T-g), and dielectric properti ...

American Chemical Society2021

DEA Self-discharge Characterization for Low Duty Cycle Applications

Yves Perriard, Yoan René Cyrille Civet, Thomas Guillaume Martinez, Stefania Maria Aliki Konstantinidi, Raphaël Johannes Charles Mottet

This publication presents the characterization of self discharging Dielectric Elastomer Actuators (DEAs) in order to give place to low duty cycle applications, during which a DEA must remain actuated for long periods of time. DEAs typically present a low c ...

IEEE2021

LiNiO Gate Dielectric with Tri-Gate Structure for High Performance E-mode GaN transistors

Elison de Nazareth Matioli, Luca Nela, Taifang Wang, Mohammad Samizadeh Nikooytabalvandani

In this work, a Tri-Gate AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOSHEMT) with lithium nickel oxide (LiNiO) gate dielectric is demonstrated for enhancement-mode (e-mode) operation. The high-quality of pulse-laser-deposited (P ...

IEEE2021

TID Degradation Mechanisms in 16-nm Bulk FinFETs Irradiated to Ultrahigh Doses

Christian Enz

This article investigates the total ionizing dose (TID) degradation mechanisms of 16-nm bulk Si FinFETs at ultrahigh doses. n- and p-FinFETs with several channel lengths are irradiated up to 1 Grad(SiO2) and then annealed for 24 h at 100 degrees C. Irradia ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2021

Figures-of-Merit of Lateral GaN Power Devices: modeling and comparison of HEMTs and PSJs

Elison de Nazareth Matioli, Luca Nela, Catherine Erine, Maria Vittoria Oropallo

In this work, we propose a simple and yet accurate physical model to describe the figures-of-merit (FOMs) of lateral GaN power devices. While the performance limit of vertical devices is well understood, the FOMs of lateral devices are not properly describ ...

2021

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