Publications related to LED street light

Ion-Dipole Interaction Enabling Highly Efficient CsPbI3 Perovskite Indoor Photovoltaics

Michael Graetzel, Shaik Mohammed Zakeeruddin, Jie Chen, Haizhou Lu, Xiaoyan Wang, Di Zhang, Ziyun Wang, Meng Li, Xingyu Gao

Metal halide perovskites are ideal candidates for indoor photovoltaics (IPVs) because of their easy-to-adjust bandgaps, which can be designed to cover the spectrum of any artificial light source. However, the serious non-radiative carrier recombination und ...

Wiley-V C H Verlag Gmbh2023

Optical Diffraction Tomography Using Nearly In-Line Holography with a Broadband LED Source

Demetri Psaltis, Abhijit Roy, Ahmed Ayoub

We present optical tomography methods for a 3D refractive index reconstruction of weakly scattering objects using LED light sources. We are able to record holograms by minimizing the optical path difference between the signal and reference beams while sepa ...

MDPI2022

Comparison between CIE 2° and 10° field photopic luminosity functions V(λ) for calculating daylight discomfort glare metrics

Marilyne Andersen, Jan Wienold, Sneha Jain

The spectral sensitivity of the average human eye in photopic conditions is represented by the photopic luminosity function V (λ). The CIE has established the photopic luminosity functions for the 2o and 10o visual fields for a standard observer applicable ...

2022

Photochemical Alkynylations with Hypervalent Iodine Reagents

Stephanie Grace Elizabeth Amos

Over the past twenty years, photochemical transformations have gained in importance in organic chemistry. Indeed, the development of photocatalysts has allowed the use of visible light as an energy source for chemical transformations. More specifically, ph ...

EPFL2022

Room-temperature electrical control of polarization and emission angle in a cavity-integrated 2D pulsed LED

Andras Kis, Fedele Tagarelli, Dmitrii Unuchek, Zhe Sun, Juan Francisco Gonzalez Marin, Cheol Yeon Cheon

Devices based on two-dimensional (2D) semiconductors hold promise for the realization of compact and versatile on-chip interconnects between electrical and optical signals. Although light emitting diodes (LEDs) are fundamental building blocks for integrate ...

Nature Research2022

Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics

Nicolas Grandjean, Jean-François Carlin, Mauro Mosca, Camille Haller

III-N light-emitting-diodes (LEDs) are subject of intense investigations, thanks to their high efficiency and great reliability. The quality of the semiconductor material has a significant impact on the electro-optical performance of LEDs: for this reason, ...

SPIE-INT SOC OPTICAL ENGINEERING2022

Visual comfort without borders: Extending daylight glare prediction to dim daylit environments

Geraldine Cai Ting Quek

Avoiding discomfort glare is one of the critical aspects of maintaining visual comfort, which significantly influences occupants' overall satisfaction with their indoor environment. Discomfort glare prediction models have been developed for various lightin ...

EPFL2022

Deep defects in InGaN LEDs: modeling the impact on the electrical characteristics

Nicolas Grandjean, Jean-François Carlin, Camille Haller

Deep defects have a fundamental role in determining the electro-optical characteristics and in the efficiency of InGaN light-emitting diodes (LEDs). However, modeling their effect on the electrical characteristics of the LED is not straightforward. ...

SPIE-INT SOC OPTICAL ENGINEERING2022

Effects of illuminance intensity on the green channel of remote photoplethysmography (rPPG) signals

Ata Jedari Golparvar

Point-of-care remote photoplethysmography (rPPG) devices that utilize low-cost RGB cameras have drawn considerable attention due to their convenience in contactless and non-invasive vital signs monitoring. In rPPG, sufficient lighting conditions are essent ...

SPRINGER2022

Cathodoluminescent screen imaging system for seeded blob detection in toroidal plasma experiment

Ambrogio Fasoli, Ivo Furno, Paolo Ricci, Paul Bowen, Marcelo Baquero Ruiz, Carlos Morais, Fabian Manke

We designed and built a diagnostic based on a cathodoluminescent screen for the detection of turbulent plasma structures with high spatial resolution. The screen is coated with a low threshold energy cathodoluminescent powder that emits light when exposed ...

2020

Progress in Violet Light-Emitting Diodes Based on ZnO/GaN Heterojunction

Eric Feltin, Mauro Mosca

Progress in light-emitting diodes (LEDs) based on ZnO/GaN heterojunctions has run into several obstacles during the last twenty years. While both the energy bandgap and lattice parameter of the two semiconductors are favorable to the development of such de ...

MDPI2020

Multi-User Precoder Designs for RGB Visible Light Communication Systems

Roser Vinals Terres

In this paper, we design linear precoders for the downlink of a visible light communication (VLC) system that simultaneously serves multiple users. Instead of using phosphor-coated white light-emitting diodes (PWLEDs), we focus on Red-Green-Blue light-emit ...

2020

Taking a snapshot of the triplet excited state of an OLED organometallic luminophore using X-rays

Andrea Cannizzo, Giulia Fulvia Mancini, Camila Bacellar Cases Da Silveira, Martin Beck, Victoria Kabanova, Samuel Menzi

OLED technology beyond small or expensive devices requires light-emitters, luminophores, based on earth-abundant elements. Understanding and experimental verification of charge transfer in luminophores are needed for this development. An organometallic mul ...

Nature Publishing Group2020

InAlN underlaver for near ultraviolet InGaN based light emitting diodes

Nicolas Grandjean, Jean-François Carlin, Mauro Mosca, Camille Haller, Rolf Erni

We report on InAlN underlayer (UL) to improve the efficiency of near ultraviolet (NUV) light emitting diodes (LEDs). While InGaN UL is commonly used in high-efficiency blue LEDs it may absorb light for shorter wavelengths. InAlN lattice-matched to GaN exhi ...

2019

Elucidating the role of the InGaN UL in the efficiency of InGaN based light-emitting diodes

Camille Haller

Blue III-nitride light-emitting diodes (LEDs) are widely used nowadays in solid-state lighting, as white light can be produced by combining yellow phosphors and blue LEDs. This technology has the advantage to have a higher luminous efficiency than incandes ...

EPFL2019

Electroluminescence of Single InGaN/GaN Micropyramids

Hua Zhang, Gwénolé Jean Jacopin

The results of the fabrication of technological regimes of formation and the study of the optical properties of light emitting diodes (LED) micropyramids based on InGaN/GaN are presented. The structures were formed by the method of Metalorganic vapour-phas ...

PLEIADES PUBLISHING INC2019

A smart luminaire in an office environment: impact on light distribution, user interactions and comfort

Jérôme Henri Kämpf

A smart luminaire able to change the direction of its light beam is installed in an office environment and compared to the available LEDs fixtures. Standard lighting measures are performed and a controlled user experiment is conducted, involving 22 subject ...

IOP Publishing Ltd2019

Ultrafast carrier dynamics in III-nitride nanostructures and LED quantum efficiency

Wei Liu, Wei Liu

Since the seminal report about the first Candela- class-brightness InGaN blue light- emitting diodes (LEDs) by Shuji Nakamura et al. in 1994, III-nitride semiconductors have been one of the most important platforms for optoelectronic devices. The achieve ...

EPFL2019

Low-temperature growth of n(++)-GaN by metalorganic chemical vapor deposition to achieve low-resistivity tunnel junctions on blue light emitting diodes

Nicolas Grandjean, Jean-François Carlin, Pirouz Sohi, Yao Chen, Mauro Mosca

We report on low-resistivity GaN tunnel junctions (TJ) on blue light-emitting diodes (LEDs). Si-doped n(++)-GaN layers are grown by metalorganic chemical vapor deposition directly on LED epiwafers. Low growth temperature (

IOP PUBLISHING LTD2019

Impact of alloy disorder on Auger recombination in single InGaN/GaN core-shell microrods

Benoît Marie Joseph Deveaud, Gwénolé Jean Jacopin, Wei Liu, Georg Rossbach, Christian Mounir

We study the influence of local inhomogeneities on carrier recombination dynamics in single InGaN/GaN core-shell microrods (MRs) by means of time-resolved microphotoluminescence (TRPL) at 10 K. At low carrier density (similar to 10(11) cm(-2)), the carrier ...

2019