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Related publications (29)

Erbium doped random fiber laser and fiber mixing effect

Luc Thévenaz, Can Yao, Camille Sophie Brès

We demonstrate an active random fiber laser by directly pumping a 100 m erbium-doped fiber at 980 nm wavelength, with a fiber loop mirror forming a half-open cavity. Random lasing with competing spectral modes in the range from 1535 nm to 1560 nm is achiev ...

2017

Increased Photoconductivity Lifetime in GaAs Nanowires by Controlled n-Type and p-Type Doping

Anna Fontcuberta i Morral, Federico Matteini, Alberto Casadei, Fauzia Jabeen

Controlled doping of GaAs nanowires is crucial for the development of nanowire-based electronic and optoelectronic devices. Here, we present a noncontact method based on time resolved terahertz photoconductivity for assessing n- and p-type doping efficienc ...

American Chemical Society2016

Increased Photoconductivity Lifetimes in GaAs Nanowires via n-Type and p-Type Shell Doping

Anna Fontcuberta i Morral, Federico Matteini, Francesca Amaduzzi

Reliable doping in GaAs nanowires is essential for the development of novel optoelectronic devices. Previously, GaAs nanowires have been shown to exhibit extremely short photoconductivity lifetimes of a few picoseconds due to their high surface recombinati ...

Ieee2016

High-Efficiency Perovskite Solar Cells Employing a S,N-Heteropentacene-based D-A Hole-Transport Material

Michael Graetzel, Dongqin Bi, Mohammad Khaja Nazeeruddin, Shaik Mohammed Zakeeruddin, Ulf Anders Hagfeldt, Peng Gao, Marius Franckevicius, Amaresh Mishra

We developed a new donor--acceptor-type hole-transport material (HTMs) incorporating S,N-heteropentacene as -spacer, triarylamine as donor, and dicyanovinylene as acceptor. In addition to appropriate frontier molecular orbital energies, the new HTM showed ...

Wiley-V C H Verlag Gmbh2016

Femtosecond-laser hyperdoping silicon in an SF6 atmosphere: Dopant incorporation mechanism

Tobias Schneider, Silvija Gradecak

In this paper, we examine the fundamental processes that occur during femtosecond-laser hyperdoping of silicon with a gas-phase dopant precursor. We probe the dopant concentration profile as a function of the number of laser pulses and pressure of the dopa ...

Amer Inst Physics2015

Composition and temperature dependence of the Yb valence in YbMn6Ge6-xSnx studied by RIXS

Marco Grioni

We investigate the composition and temperature (10-450 K) dependence of the Yb valence in YbMn6Ge6-xSnx (x = 0.0, 3.8, 4.2, 4.4, and 5.5) using resonant inelastic x-ray scattering (RIXS). The observed change in the Yb valence with composition (from v simil ...

Amer Physical Soc2015

Modulation Doping of GaAs/AlGaAs Core-Shell Nanowires With Effective Defect Passivation and High Electron Mobility

Anna Fontcuberta i Morral, Federico Matteini, Fauzia Jabeen, Alberto Casadei, Sonia Conesa Boj, Francesca Amaduzzi

Reliable doping is required to realize many devices based on semiconductor nanowires. Group IIIV nanowires show great promise as elements of high-speed optoelectronic devices, but for such applications it is important that the electron mobility is not comp ...

American Chemical Society2015

Optimization of NH₃-MBE grown p-doped (Al)GaN layers and their implementation in long wavelength laser diodes and tunnel junctions

Marco Malinverni

Over the last two decades III-nitride optoelectronic devices have experienced an impressive evolution in terms of performance. However, their potential is far from being fully exploited. Although they offer bandgaps from the deep UV to the infrared spectra ...

EPFL2015

Kerr nonlinearity of Thulium-doped fiber near 2 um

Camille Sophie Brès, Svyatoslav Kharitonov, Adrien Billat, Steevy Joyce Cordette, Ludovic Zulliger

The nonlinear coefficient and group velocity dispersion of a thulium-doped fiber near 2μm are evaluated via four-wave mixing. Nonlinearity of thulium-doped fiber can be used for the design of doped-fiber lasers in this spectral region. ...

2015

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