Publications related to Content-addressable memory

How to Achieve Large-Area Ultra-Fast Operation of MoS 2 Monolayer Flash Memories?

Aleksandra Radenovic, Andras Kis, Mukesh Kumar Tripathi, Asmund Kjellegaard Ottesen, Yanfei Zhao, Guilherme Migliato Marega, Zhenyu Wang, Hyungoo Ji

Memory devices have returned to the spotlight due to increasing interest in using in-memory computing architectures to make data-driven algorithms more energy-efficient. One of the main advantages of this architecture is the efficient performance of vector ...

2023

Impact of Interface Traps in Floating-Gate Memory Based on Monolayer MoS2

Andras Kis, Guilherme Migliato Marega

Two-dimensional materials (2DMs) have found potential applications in many areas of electronics, such as sensing, memory systems, optoelectronics, and power. Despite an intense experimental work, the literature is lacking of accurate modeling of nonvolatil ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

In-Memory Hardware and Architectural Extensions for Workloads Acceleration

William Andrew Simon

Utilization of edge devices has exploded in the last decade, with such use cases as wearable devices, autonomous driving, and smart homes. As their ubiquity grows, so do expectations of their capabilities. Simultaneously, their formfactor and use cases lim ...

EPFL2022

Low-Power Artificial Neural Network Perceptron Based on Monolayer MoS2

Aleksandra Radenovic, Andras Kis, Mukesh Kumar Tripathi, Guilherme Migliato Marega, Zhenyu Wang

Machine learning and signal processing on the edge are poised to influence our everyday lives with devices that will learn and infer from data generated by smart sensors and other devices for the Internet of Things. The next leap toward ubiquitous electron ...

2022

Low-Cost Side-Channel Secure Standard 6T-SRAM-Based Memory With a 1% Area and Less Than 5% Latency and Power Overheads

Robert Giterman

Side-channel attacks constitute a concrete threat to IoT systems-on-a-chip (SoCs). Embedded memories implemented with 6T SRAM macrocells often dominate the area and power consumption of these SoCs. Regardless of the computational platform, the side-channel ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2021

Exploring ferroelectricity in HfO2-based thin films by tackling application-relevant challenges

Matteo Cavalieri

Ferroelectric materials offer a broad range of application-relevant properties, including spontaneous polarization switchable by electric field. Archetypical representatives of this class of materials are perovskites, currently used in applications ranging ...

EPFL2021

Exploration Methodology for BTI-Induced Failures on RRAM-Based Edge AI Systems

David Atienza Alonso, Alexandre Sébastien Julien Levisse, Miguel Peon Quiros, Marco Antonio Rios

Resistive switching memory technologies (RRAM) are seen by most of the scientific community as an enabler for Edge-level applications such as embedded deep Learning, AI or signal processing of audio and video signals. However, going beyond a "simple'' repl ...

IEEE2020

Accurate deep neural network inference using computational phase-change memory

Irem Boybat Kara, Evangelos Eleftheriou, Abu Sebastian

In-memory computing using resistive memory devices is a promising non-von Neumann approach for making energy-efficient deep learning inference hardware. However, due to device variability and noise, the network needs to be trained in a specific way so that ...

Nature Research2020

RRAM-VAC: A Variability-Aware Controller for RRAM-based Memory Architectures

David Atienza Alonso, Alexandre Sébastien Julien Levisse, Marco Antonio Rios, Shikhar Tuli

The growing need for connected, smart and energy efficient devices requires them to provide both ultra-low standby power and relatively high computing capabilities when awoken. In this context, emerging resistive memory technologies (RRAM) appear as a prom ...

2020

A Product Engine for Energy-Efficient Execution of Binary Neural Networks Using Resistive Memories

David Atienza Alonso, Marina Zapater Sancho, Pierre-Emmanuel Julien Marc Gaillardon, Yasir Mahmood Qureshi, Xifan Tang, Edouard Giacomin, João Miguel Morgado Pereira Vieira

The need for running complex Machine Learning (ML) algorithms, such as Convolutional Neural Networks (CNNs), in edge devices, which are highly constrained in terms of computing power and energy, makes it important to execute such applications efficiently. ...

2019

Analog Control of Retainable Resistance Multistates in HfO2 Resistive-Switching Random Access Memories (ReRAMs)

Elmira Shahrabi, Yusuf Leblebici, Jury Sandrini, Carlo Ricciardi, Cecilia Giovinazzo, Oguz Tolga Celik

Resistive-switching random access memory (ReRAM) technologies are nowadays a good candidate to overcome the bottleneck of Von Neumann architectures, taking advantage of their logic-in-memory capability and the ability to mimic biological synapse behavior. ...

AMER CHEMICAL SOC2019

DynaBurst: Dynamically Assemblying DRAM Bursts over a Multitude of Random Accesses

Paolo Ienne, Mikhail Asiatici

The effective bandwidth of the FPGA external memory, usually DRAM, is extremely sensitive to the access pattern. Nonblocking caches that handle thousands of outstanding misses (miss-optimized memory systems) can dynamically improve bandwidth utilization wh ...

IEEE2019

Shrink It or Shed It! Minimize the Use of LSQs in Dataflow Designs

Paolo Ienne, Andrea Guerrieri, Lana Josipovic, Atri Bhattacharyya

When applications have unpredictable memory accesses or irregular control flow, dataflow circuits overcome the limitations of statically scheduled high-level synthesis (HLS). If memory dependences cannot be determined at compile time, dataflow circuits rel ...

IEEE COMPUTER SOC2019

ReRAM From Material Study to CMOS Co-integration

Elmira Shahrabi

The revolution of information-technology owes to silicon-based complementary-metal-oxide (CMOS) technology. However, CMOS technology approaches its physical limitation hardening the further progress of memory devices as well as computing paradigm requiring ...

EPFL2019

Performance improvement of chip-level CMOS-integrated ReRAM cells through material optimization

Elmira Shahrabi, Thomas La Grange, Yusuf Leblebici, Tugba Demirci

The integration of the resistive random access memory (ReRAM) with CMOS logic circuitry provides a solution to scaling limitations, and offers promising candidates for use in next generation computing applications. It is challenging to realize a reliable, ...

ELSEVIER SCIENCE BV2019

Stop Crying Over Your Cache Miss Rate: Handling Efficiently Thousands of Outstanding Misses in FPGAs

Paolo Ienne, Mikhail Asiatici

FPGAs rely on massive datapath parallelism to accelerate applications even with a low clock frequency. However, applications such as sparse linear algebra and graph analytics have their throughput limited by irregular accesses to external memory for which ...

ASSOC COMPUTING MACHINERY2019

An FPGA-Based Test System for RRAM Technology Characterization

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Maxime Victor Thammasack, Armando Biscontini

Resistive random access memory (RRAM) technologies have recently gained large attention from the academic and industrial research communities. Significant efforts have been made to enhance the performance of the memory stacks from both communities through ...

2018

Perspective on training fully connected networks with resistive memories: Device requirements for multiple conductances of varying significance

Giorgio Cristiano, Massimo Giordano

Novel Deep Neural Network (DNN) accelerators based on crossbar arrays of non-volatile memories (NVMs)-such as Phase-Change Memory or Resistive Memory-can implement multiply-accumulate operations in a highly parallelized fashion. In such systems, computatio ...

2018

Computing with Ferroelectric FETs: Devices, Models, Systems, and Applications

Mihai Adrian Ionescu, Anisoara Ionescu, Virginie Anne Chenaux

In this paper, we consider devices, circuits, and systems comprised of transistors with integrated ferroelectrics. Said structures are actively being considered by various semiconductor manufacturers as they can address a large and unique design space. Tra ...

IEEE2018

Mixed-precision architecture based on computational memory for training deep neural networks

Irem Boybat Kara, Evangelos Eleftheriou, Abu Sebastian

Deep neural networks (DNN) have revolutionized the field of machine learning by providing unprecedented human-like performance in solving many real-world problems such as image or speech recognition. Training of large DNNs, however, is a computationally in ...

IEEE2018