Publications related to Indium arsenide

Surface Chemistry Dictates the Enhancement of Luminescence and Stability of InP QDs upon c-ALD ZnO Hybrid Shell Growth

Raffaella Buonsanti, Anna Loiudice, Petru Pasquale Albertini, Jari Leemans, Dragos-Constantin Stoian, Mark Adrian Newton, Ona Segura Lecina, Philippe Benjamin Green

Indium phosphide quantum dots (InP QDs) are a promising example of Restriction of Hazardous Substances directive (RoHS)-compliant light-emitting materials. However, they suffer from low quantum yield and instability upon processing under ambient conditions ...

Amer Chemical Soc2023

In situ construction of graphdiyne based heterojunctions by a deprotection-free approach for photocatalytic hydrogen generation

Cong Wang, Jian Li

Graphdiyne (GDY) with a direct bandgap, high charge carrier mobility, and ordered pore structure, is considered an excellent matrix for the construction of heterojunction photocatalysts. However, the traditional fabrication methods for GDY-based heterojunc ...

Royal Society of Chemistry2023

Sub-kHz-Linewidth External-Cavity Laser (ECL) With Si3N4 Resonator Used as a Tunable Pump for a Kerr Frequency Comb

Tobias Kippenberg, Junqiu Liu

Combining optical gain in direct-bandgap III-V materials with tunable optical feedback offered by advanced photonic integrated circuits is key to chip-scale external-cavity lasers (ECL), offering wideband tunability along with low optical linewidths. Exter ...

IEEE Institute of Electrical and Electronics Engineers2023

Photodynamic treatment of multidrug-resistant bacterial infection using indium phosphide quantum dots

Francesco Stellacci, Inyoung Yonah Lee

Infections caused by multidrug-resistant (MDR) bacteria pose an impending threat to humanity, as the evolution of MDR bacteria outpaces the development of effective antibiotics. In this work, we use indium phosphide (InP) quantum dots (QDs) to treat infect ...

ROYAL SOC CHEMISTRY2022

Optoelectronics based on the spin-valley physics of 2D materials

Juan Francisco Gonzalez Marin

Two-dimensional (2D) materials are atomically thin crystals with exceptional mechanical, electrical and optical properties. Their unique characteristics originating from quantum confinement in the vertical dimension have attracted a strong interest for sci ...

EPFL2022

Low-noise frequency-agile photonic integrated lasers for coherent ranging

Tobias Kippenberg, Rui Ning Wang, Anat Siddharth, Viacheslav Snigirev, Junqiu Liu, Wenle Weng, Jijun He, Andrey Voloshin, Vladimir Shadymov

Stable and tunable integrated lasers are fundamental building blocks for applications from spectroscopy to imaging and communication. Here the authors present a narrow linewidth hybrid photonic integrated laser with low frequency noise and fast linear wave ...

Nature Portfolio2022

Nano-emitting Heterostructures Violate Optical Reciprocity and Enable Efficient Photoluminescence in Halide-Segregated Methylammonium-Free Wide Bandgap Perovskites

Christophe Ballif, Quentin Thomas Jeangros, Peter Joseph Fiala, Christian Michael Wolff, Chien-Jen Yang, Pietro Caprioglio

This work investigates halide segregation in methylammonium-free wide bandgap perovskites by photoluminescence quantum yield (PLQY) and advanced electron microscopy techniques. Our study reveals how the formation of nano-emitting low-energy domains embedde ...

AMER CHEMICAL SOC2021

Second harmonic generation in glass-based metasurfaces using tailored surface lattice resonances

Olivier Martin, Fabien Sorin, Jérémy Butet, Wei Yan, Kuang-Yu Yang, Dang Tùng Nguyen, Andreas Leber, Chaoqun Dong

Dielectric metasurfaces have shown prominent applications in nonlinear optics due to strong field enhancement and low dissipation losses at the nanoscale. Chalcogenide glasses are one of the promising materials for the observation of nonlinear effects than ...

2021

Multiscale Modeling Strategy of 2D Covalent Organic Frameworks Confined at an Air-Water Interface

Andres Adolfo Ortega Guerrero

Two-dimensional covalent organic frameworks (2D COFs) have attracted attention as versatile active materials in many applications. Recent advances have demonstrated the synthesis of monolayer 2D COF via an air-water interface. However, the interfacial 2D p ...

AMER CHEMICAL SOC2021

GaN vertical power devices on silicon substrates

Riyaz Mohammed Abdul Khadar

Gallium Nitride (GaN) is a wonder material which has widely transformed the world by enabling energy-efficient white light-emitting diodes. Over the past decade, GaN has also emerged as one of the most promising materials for developing power devices which ...

EPFL2021

InAs-on-Insulator Fin Nanostructures for Integrated Computation and Sensing Functions

Maneesha Rupakula

Field-effect transistors (FETs) have established themselves as a leading platform for electrical detection of chemical and biological species. Their advantages over other optical, mechanical sensing platforms are attributed to being miniaturizable, mechani ...

EPFL2020

First-principles calculations of charge carrier mobility and conductivity in bulk semiconductors and two-dimensional materials

Samuel Poncé, Feliciano Giustino

One of the fundamental properties of semiconductors is their ability to support highly tunable electric currents in the presence of electric fields or carrier concentration gradients. These properties are described by transport coefficients such as electro ...

IOP PUBLISHING LTD2020

Monolithically Integrated Catalyst-Free High Aspect Ratio InAs-on-Insulator (InAsOI) FinFETs for pH Sensing

Mihai Adrian Ionescu, Junrui Zhang, Maneesha Rupakula, Francesco Bellando, Fabien Patrick Wildhaber, Clarissa Convertino

In this work, we report a novel Indium Arsenide-on-insulator (InAsOI) FinFET platform designed with record high aspect ratio that favors the use of the devices as charge sensors. InAs has very high mobility among III-V semiconductors and an intrinsic surfa ...

2020

Coherent Epitaxial Semiconductor-Ferromagnetic Insulator InAs/EuS Interfaces: Band Alignment and Magnetic Structure

Gabriel Aeppli, Vladimir N. Strocov, Sara Marti Sanchez, Yu Liu

Hybrid semiconductor-ferromagnetic insulator heterostructures are interesting due to their tunable electronic transport, self-sustained stray field, and local proximitized magnetic exchange. In this work, we present lattice-matched hybrid epitaxy of semico ...

AMER CHEMICAL SOC2020

Growth and characterisation of earth-abundant semiconductor nanostructures for solar energy harvesting

Simon Robert Escobar Steinvall

Zinc phosphide (Zn3P2) is a compound semiconductor based on earth-abundant elements with functional properties ideal for solar cell applications. Cheap, abundant, and renewable energy sources are increasingly imperative due to the imminent threat posed by ...

EPFL2020

Monolithically integrated catalyst-free High Aspect Ratio InAs-On-Insulator (InAsOI) FinFETs for pH sensing

Mihai Adrian Ionescu, Kirsten Emilie Moselund, Junrui Zhang, Maneesha Rupakula, Francesco Bellando, Fabien Patrick Wildhaber, Clarissa Convertino

In this work, we report a novel Indium Arsenide-on-insulator (InAsOI) FinFET platform designed with record high aspect ratio that favor the use of the devices as charge sensors. InAs has very high mobility among III-V semiconductors and an intrinsic surfac ...

IEEE2019

Utilizing electromagnetically induced transparency in InAs quantum dots for all-optical transistor design

Hamed Sattari

We propose a multilayer medium with semiconductor quantum dot nano-structures as a defect layer for all-optical control of the 1.55 mu m probe beam. The effect of the coupling field and incoherent pump on absorption and dispersion properties of the quantum ...

Optical Soc Amer2017

Tuning growth direction of catalyst-free InAs(Sb) nanowires with indium droplets

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Martin George Friedl, Heidi Andrea Potts, Nicholas Paul Morgan

The need for indium droplets to initiate self-catalyzed growth of InAs nanowires has been highly debated in the last few years. Here, we report on the use of indium droplets to tune the growth direction of self-catalyzed InAs nanowires. The indium droplets ...

Institute of Physics2017

2D transition metal dichalcogenides

Andras Kis, Oleg Yazyev, Dmitry Ovchinnikov, Sajedeh Manzeli, Diego José Pasquier

Graphene is very popular because of its many fascinating properties, but its lack of an electronic bandgap has stimulated the search for 2D materials with semiconducting character. Transition metal dichalcogenides (TMDCs), which are semiconductors of the t ...

Nature Publishing Group2017

Ordered nanostructures on silicon substrates : from the top-down to the bottom-up

Jelena Vukajlovic Plestina

Silicon is today the main material used in electronics. It is a very advanced and mature technology. It is therefore clear that new technological concepts and materials should be introduced through the integration on the silicon platform. III-V semiconduct ...

EPFL2017