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Related publications (29)

INFLUENCE OF THE INITIAL VOLUME OF LOCK EXCHANGE GRAVITY CURRENTS ON THE SEDIMENT ENTRAINMENT CAPACITY

Jessica Zordan

In the lock-exchange technique used to produce gravity currents, two fluids of different densities are initially at rest in a tank and separated by a vertical barrier, the lock gate. When this gate is suddenly removed, the two fluids come into contact and, ...

2017

Pixel parallel localized driver design for a 128 x 256 pixel array 3D 1Gfps image sensor

Edoardo Charbon, Takeharu Etoh

In this paper, a 3D 1Gfps BSI image sensor is proposed, where 128 × 256 pixels are located in the top-tier chip and a 32 × 32 localized driver array in the bottom-tier chip. Pixels are designed with Multiple Collection Gates (MCG), which collects photons s ...

2016

Computationally Efficient Multiple-Independent-Gate Device Model

Giovanni De Micheli, Mariagrazia Graziano, Pierre-Emmanuel Julien Marc Gaillardon, Gianluca Piccinini

Nanowire Field Effect Transistors (FETs) with multiple independent gates around a silicon channel feature ultimate gate control and are regarded as promising candidates for next generation transistors. Being inherently more complex than conventional gate-a ...

Institute of Electrical and Electronics Engineers2016

Disorder engineering and conductivity dome in ReS2 with electrolyte gating

Andras Kis, Oleg Yazyev, Dumitru Dumcenco, Dmitry Ovchinnikov, Fernando Gargiulo, Adrien Victor Allain, Diego José Pasquier

Atomically thin rhenium disulphide (ReS2) is a member of the transition metal dichalcogenide family of materials. This two-dimensional semiconductor is characterized by weak interlayer coupling and a distorted 1T structure, which leads to anisotropy in ele ...

Nature Publishing Group2016

Exploiting the Expressive Power of Graphene Reconfigurable Gates via Post-Synthesis Optimization

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Luca Gaetano Amarù, Sandeep Miryala

As an answer to the new electronics market demands, semiconductor industry is looking for different materials, new process technologies and alternative design solutions that can support Silicon replacement in the VLSI domain. The recent introduction of gra ...

ACM2015

Role of the gate in ballistic nanowire SOI MOSFETs

Christian Enz, Jean-Michel Sallese, Anurag Mangla

In this paper we report the results of Monte-Carlo simulations performed on double-gate ballistic MOSFETs with a geometry such that the gates overlap only a fraction of the channel. We present a qualitative analysis of the simulation results highlighting t ...

Elsevier2015

Multiple Independent Gate FETs: How Many Gates Do We Need?

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Subhasish Mitra, Luca Gaetano Amarù

Multiple Independent Gate Field Effect Transistors (MIGFETs) are expected to push FET technology further into the semiconductor roadmap. In a MIGFET, supplementary gates either provide (i) enhanced conduction properties or (ii) more intelligent sw ...

IEEE2015

A Survey on Low-Power Techniques with Emerging Technologies: From Devices to Systems

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon

Nowadays, power consumption is one of the main limitations of electronic systems. In this context, novel and emerging devices provide us with new opportunities to keep the trend to low-power design. In this survey paper, we present a transversal survey on ...

Assoc Computing Machinery2015

Polarity Control at Runtime : from Circuit Concept to Device Fabrication

Michele De Marchi

Semiconductor device research for digital circuit design is currently facing increasing challenges to enhance miniaturization and performance. A huge economic push and the interest in novel applications are stimulating the development of new pathways to ov ...

EPFL2015

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