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Related publications (28)

Computationally Efficient Multiple-Independent-Gate Device Model

Giovanni De Micheli, Mariagrazia Graziano, Pierre-Emmanuel Julien Marc Gaillardon, Gianluca Piccinini

Nanowire Field Effect Transistors (FETs) with multiple independent gates around a silicon channel feature ultimate gate control and are regarded as promising candidates for next generation transistors. Being inherently more complex than conventional gate-a ...

Institute of Electrical and Electronics Engineers2016

Single field effect transistor capacitor-less memory device and method of operating the same

Mihai Adrian Ionescu, Arnab Biswas, Nilay Dagtekin

A single field effect transistor capacitor-less memory device, and method of operating the same, including a drain region, a source region, an intrinsic channel region between the drain region and the source region forming the single field effect transisto ...

Technology Transfer Office EPFL2016

Exploiting the Expressive Power of Graphene Reconfigurable Gates via Post-Synthesis Optimization

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Luca Gaetano Amarù, Sandeep Miryala

As an answer to the new electronics market demands, semiconductor industry is looking for different materials, new process technologies and alternative design solutions that can support Silicon replacement in the VLSI domain. The recent introduction of gra ...

ACM2015

On the Design of a Fault Tolerant Ripple-Carry Adder with Controllable-Polarity Transistors

Giovanni De Micheli, Eduardo Sanchez, Jian Zhang, Pierre-Emmanuel Julien Marc Gaillardon, Hassan Ghasemzadeh Mohammadi

This paper first explores the effects of faults on circuits implemented with controllable-polarity transistors. We propose a new fault model that suits the characteristics of these devices, and report the results of a SPICE-based analysis of the effects of ...

IEEE2015

A Survey on Low-Power Techniques with Emerging Technologies: From Devices to Systems

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon

Nowadays, power consumption is one of the main limitations of electronic systems. In this context, novel and emerging devices provide us with new opportunities to keep the trend to low-power design. In this survey paper, we present a transversal survey on ...

Assoc Computing Machinery2015

Polarity Control at Runtime : from Circuit Concept to Device Fabrication

Michele De Marchi

Semiconductor device research for digital circuit design is currently facing increasing challenges to enhance miniaturization and performance. A huge economic push and the interest in novel applications are stimulating the development of new pathways to ov ...

EPFL2015

Configurable Logic Gates Using Polarity Controlled Silicon Nanowire Gate-All-Around FETs

Giovanni De Micheli, Davide Sacchetto, Yusuf Leblebici, Jian Zhang, Pierre-Emmanuel Julien Marc Gaillardon, Michele De Marchi

This work demonstrates the first fabricated 4-transistor logic gates using polarity-configurable, gate-all- around silicon nanowire transistors. This technology enhances conventional CMOS functionality by adding the degree of free- dom of dynamic polarity ...

Institute of Electrical and Electronics Engineers2014

Configurable Circuits Featuring Dual-Threshold-Voltage Design With Three-Independent-Gate Silicon Nanowire FETs

Giovanni De Micheli, Xifan Tang, Pierre-Emmanuel Julien Marc Gaillardon, Jian Zhang

Silicon nanowire transistors with Schottky-barrier contacts exhibit both n-type and p-type characteristics under different bias conditions. Polarity controllability of silicon nanowire transistors has been further demonstrated by using an additional polari ...

Institute of Electrical and Electronics Engineers2014

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