Publications related to Diode modelling

A 73% Peak PDP Single-Photon Avalanche Diode Implemented in 110 nm CIS Technology With Doping Compensation

Edoardo Charbon, Claudio Bruschini, Ekin Kizilkan, Utku Karaca, Myung Jae Lee

In this article, we present 10 mu m diameter SPADs fabricated in 110 nm CIS technology based on an N (+) /HVPW junction, with enhanced sensitivity at short wavelengths. To reduce tunneling noise due to the highly-doped layers in the process, a doping compe ...

Ieee-Inst Electrical Electronics Engineers Inc2024

Doping Engineering for PDP Optimization in SPADs Implemented in 55-nm BCD Process

Edoardo Charbon, Claudio Bruschini, Myung Jae Lee, Feng Liu

We introduce a new family of single-photon avalanche diodes (SPADs) with enhanced depletion regions in a 55-nm Bipolar-CMOS-DMOS (BCD) technology. We demonstrate how to systematically engineer doping profiles in the main junction and in deep p-well layers ...

Ieee-Inst Electrical Electronics Engineers Inc2024

SPAD Developed in 55 nm Bipolar-CMOS-DMOS Technology Achieving Near 90% Peak PDP

Edoardo Charbon, Claudio Bruschini, Ekin Kizilkan, Pouyan Keshavarzian, Francesco Gramuglia, Won Yong Ha, Myung Jae Lee

We present a single-photon avalanche diode (SPAD) developed in 55 nm bipolar-CMOS-DMOS (BCD) technology, which achieves high photon detection probability (PDP) while its breakdown voltage is lower than 20 V. To enhance the PDP performance, the SPAD junctio ...

Ieee-Inst Electrical Electronics Engineers Inc2024

Demonstration of a Plasmonic Nonlinear Pseudodiode

Olivier Martin, Karim Achouri, Andrei Kiselev, Sergejs Boroviks

We demonstrate a nonlinear plasmonic metasurface that exhibits strongly asymmetric second-harmonic generation: nonlinear scattering is efficient upon excitation in one direction, and it is substantially suppressed when the excitation direction is reversed, ...

AMER CHEMICAL SOC2023

Single-photon avalanche diode fabricated in standard 55 nm bipolar-CMOS-DMOS technology with sub-20 V breakdown voltage

Edoardo Charbon, Claudio Bruschini, Won Yong Ha, Myung Jae Lee

This paper presents a single-photon avalanche diode (SPAD) in 55 nm bipolar-CMOSDMOS (BCD) technology. In order to realize a SPAD having sub-20 V breakdown voltage for mobile applications while preventing high tunneling noise, a high-voltage N-well availab ...

Optica Publishing Group2023

Charge sensing properties ofmonolithic CMOS pixel sensors fabricated in a 65 nm technology

Francesco Piro

In this work the initial performance studies of the first small monolithic pixel sensors dedicated to charged particle detection, called CE-65, fabricated in the 65nm TowerJazz Panasonic Semiconductor Company are presented. The tested prototypes comprise m ...

ELSEVIER2022

Low-noise high-dynamic-range single-photon avalanche diodes with integrated PQAR circuit in a standard 55 nm BCD

Edoardo Charbon, Claudio Bruschini, Ekin Kizilkan, Pouyan Keshavarzian, Francesco Gramuglia, Myung Jae Lee

Single-photon avalanche diode (SPAD) based sensors and systems enable a variety of applications in biomedical, automotive, consumer, and security domains. While several established standard technologies, which can facilitate the design of SPAD-based system ...

SPIE-INT SOC OPTICAL ENGINEERING2022

GaN vertical power devices on silicon substrates

Riyaz Mohammed Abdul Khadar

Gallium Nitride (GaN) is a wonder material which has widely transformed the world by enabling energy-efficient white light-emitting diodes. Over the past decade, GaN has also emerged as one of the most promising materials for developing power devices which ...

EPFL2021

Figures-of-Merit of Lateral GaN Power Devices: modeling and comparison of HEMTs and PSJs

Elison de Nazareth Matioli, Luca Nela, Catherine Erine, Maria Vittoria Oropallo

In this work, we propose a simple and yet accurate physical model to describe the figures-of-merit (FOMs) of lateral GaN power devices. While the performance limit of vertical devices is well understood, the FOMs of lateral devices are not properly describ ...

2021

A novel approach for SPICE modeling of light and radiation effects in ICs

Chiara Rossi

Modeling the interaction of ionizing radiation, either light or ions, in integrated circuits is essential for the development and optimization of optoelectronic devices and of radiation-tolerant circuits. Whereas for optical sensors photogenerated carriers ...

EPFL2021

Modeling of Short-Channel Effects in GaN HEMTs

Farzan Jazaeri

In this article, we propose an explicit and analytic charge-based model for estimating short-channel effects (SCEs) in GaN high-electron-mobility transistor (HEMT) devices. The proposed model is derived from the physical charge-based core of the ecole Poly ...

2020

Experiments and modelling for glow discharge plasmas applied to niobium sputter deposition in superconducting radiofrequency cavities

Thibaut François Hugo Richard

Thin film coatings are ubiquitous in modern daily lives, from the semi-conductor industry to aesthetic applications, and rely on the modification of a given material to enhance its surface properties. At CERN (European Organization for Nuclear Research), t ...

EPFL2019

Transient Current Technique characterization of bonded interfaces for monolithic silicon radiation detectors

Jacopo Bronuzzi

This thesis aims at demonstrating a novel technique for the characterization of interfaces obtained by a CMOS-compatible Surface Activated Bonding (SAB) process between silicon wafers. This enables the optimization of the two main components of monolithic ...

EPFL2018

High-Performance Back-Illuminated Three-Dimensional Stacked Single-Photon Avalanche Diode Implemented in 45-nm CMOS Technology

Edoardo Charbon, Myung Jae Lee, Preethi Padmanabhan, Augusto Ronchini Ximenes

We present a high-performance back-illuminated three-dimensional stacked single-photon avalanche diode (SPAD), which is implemented in 45-nm CMOS technology for the first time. The SPAD is based on a P + /Deep N-well junction with a circular shape, for whi ...

2018

Van der Waals MoS2/VO2 heterostructure junction with tunable rectifier behavior and efficient photoresponse

Mihai Adrian Ionescu, Olivier Martin, Arnaud Magrez, Andreas Schueler, Igor Stolichnov, Anna Krammer, Teodor Rosca, Emanuele Andrea Casu, Nicolò Oliva, Chen Yan

Junctions between n-type semiconductors of different electron affinity show rectification if the junction is abrupt enough. With the advent of 2D materials, we are able to realize thin van der Waals (vdW) heterostructures based on a large diversity of mate ...

Nature Research2017

CMOS-Compatible PureGaB Ge-on-Si APD Pixel Arrays

Edoardo Charbon, Mahdi Aminian

Pure gallium and pure boron (PureGaB) Ge-on-Si photodiodes were fabricated in a CMOS compatible process and operated in linear and avalanche mode. Three different pixel geometries with very different area-to-perimeter ratios were investigated in linear arr ...

Ieee-Inst Electrical Electronics Engineers Inc2016

Electronic transport properties of vertical and lateral graphene-based heterostructures

Roberto Urcuyo Solorzano

Graphene has some drawbacks, like the absence of an electronic band gap which leads to only small gate switching ratios, and its fast carrier recombination that limits its use in optoelectronics. In order to overcome these issues, the aim of this thesis wa ...

EPFL2016

Avalanche noise diodes: A compact circuit model compatible with advanced CAD tools

Christian Enz, Pierre-André Farine, Cyril Botteron, Gabriele Tasselli

This paper proposes, for the first time, a compact model for avalanche noise diodes that can easily be inserted in advanced CAD tools. The model is based on the theory of the Read type microwave avalanche diodes. It fully accounts for the electronic tuning ...

IEEE2015

Modeling Minority Carriers Related Capacitive Effects for Transient Substrate Currents in Smart Power ICs

Maher Kayal, Jean-Michel Sallese, Camillo Stefanucci, Pietro Buccella

This paper presents an extended model for transient and ac circuit-level simulation of minority carriers propagation through the substrate of smart power integrated circuits (ICs). A p-n junction and a diffusion resistor with capacitive components are prop ...

Institute of Electrical and Electronics Engineers2015

A Low Dark Count p-i-n Diode Based SPAD in CMOS Technology

Edoardo Charbon

In this paper, a novel CMOS single-photon avalanche diode (SPAD) is presented, and the device is designed using a vertical p-i-n diode construction. The p-i-n diode with a wide depletion region enables a low-noise operation. The proposed design achieves da ...

2015