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Related publications (31)

Performance improvement of chip-level CMOS-integrated ReRAM cells through material optimization

Elmira Shahrabi, Thomas La Grange, Yusuf Leblebici, Tugba Demirci

The integration of the resistive random access memory (ReRAM) with CMOS logic circuitry provides a solution to scaling limitations, and offers promising candidates for use in next generation computing applications. It is challenging to realize a reliable, ...

ELSEVIER SCIENCE BV2019

ReRAM From Material Study to CMOS Co-integration

Elmira Shahrabi

The revolution of information-technology owes to silicon-based complementary-metal-oxide (CMOS) technology. However, CMOS technology approaches its physical limitation hardening the further progress of memory devices as well as computing paradigm requiring ...

EPFL2019

Polarity-Controllable Devices and Circuits for Doping-Free 2D Electronics

Giovanni Vincenzo Resta

The growth of information technology has been sustained by the miniaturization of Complementary Metal-Oxide-Semiconductor (CMOS) Field-Effect Transistors (FETs), with the number of devices per unit area constantly increasing, as exemplified by Mooreâ s la ...

EPFL2019

Negative Capacitance as Universal Digital and Analog Performance Booster for Complementary MOS Transistors

Mihai Adrian Ionescu, Christian Enz, Igor Stolichnov, Farzan Jazaeri, Ali Saeidi

Boltzmann electron energy distribution poses a fundamental limit to lowering the energy dissipation of conventional MOS devices, a minimum increase of the gate voltage, i.e. 60 mV, is required for a 10-fold increase in drain-to-source current at 300 K. Neg ...

Nature Research2019

Fabrication and Characterization of Freestanding Single Crystal Diamond and Silicon Microresonators

Teodoro Graziosi

Microresonators are fundamental building blocks of any photonic integrated circuit, as they can be used as filters, modulators, sensors, and to enhance light emission. If these resonators are suspended and are free to oscillate, we can exploit the interact ...

EPFL2019

Subthreshold Logic for Low-Area and Energy Efficient True Random Number Generator

Maher Kayal, Stéphane Christian Olivier Terrier, Mathieu Yves Hervé Coustans, Thomas Eberhardt, Laurent Fesquet

This paper discusses the advantages of subthreshold logic for True Random Number Generators (TRNG). In this work, the entropy is modeled, and a lower bound of Shannon's entropy per output bit can quickly be estimated. Thanks to this model, sizing TRNGs in ...

IEEE2018

Doping-free complementary inverter enabled by 2D WSe2 electrostatically-doped reconfigurable transistors

Giovanni De Micheli, Giovanni Vincenzo Resta, Pierre-Emmanuel Julien Marc Gaillardon

Amongst 2-dimensional (2D) semiconductors of the transition-metal di-chalcogenide (TMDC) family [1], tungsten diselenide (WSe2) has shown ambipolar behavior [2], [3] coupled with high carrier mobility [4] and CMOS-like devices have been experimentally demo ...

IEEE2018

A Sub-μW/Channel, 16-Channel Seizure Detection and Signal Acquisition SoC Based on Multichannel Compressive Sensing

Alexandre Schmid, Reza Ranjandish

An accurate 16-channel seizure detection system-on-chip is presented, which is based on extracting features from the compressed recorded data using multichannel compressive sensing (MCS). MCS is used to reduce the transmission data rate of sparse biologica ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2018

Time-resolved Single-photon Detector Arrays for High Resolution Near-infrared Optical Tomography

Scott Anthony Lindner

Oxygenation is an important marker in many clinical settings, e.g. diagnosing ischaemic brain injuries in preterm infants or determining treatment effectiveness in cancer patients. Despite significant efforts to determine the oxygenation state of the human ...

EPFL2018

Integrated Bio/Nano/CMOS Interfaces for Electrochemical Molecular Sensing

Sandro Carrara

Integrated bio/nano/Complementary Metal-Oxide-Semiconductor (CMOS) interfaces for electrochemical molecular sensing are becoming more and more common in the literature, especially for developing new electronic biochips for smart and intelligent Internet-of ...

WILEY2018

Doping-Free Complementary Logic Gates Enabled by Two-Dimensional Polarity-Controllable Transistors

Giovanni De Micheli, Giovanni Vincenzo Resta, Pierre-Emmanuel Julien Marc Gaillardon

Atomically thin two-dimensional (2D) materials belonging to transition metal dichalcogenides, due to their physical and electrical properties, are an exceptional vector for the exploration of next-generation semiconductor devices. Among them, due to the po ...

2018

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