Publications related to Tunnel diode

Demonstration of a Plasmonic Nonlinear Pseudodiode

Olivier Martin, Karim Achouri, Andrei Kiselev, Sergejs Boroviks

We demonstrate a nonlinear plasmonic metasurface that exhibits strongly asymmetric second-harmonic generation: nonlinear scattering is efficient upon excitation in one direction, and it is substantially suppressed when the excitation direction is reversed, ...

AMER CHEMICAL SOC2023

Millimeter-wave to near-terahertz sensors based on reversible insulator-to-metal transition in VO2

Mihai Adrian Ionescu, Teodor Rosca, Fatemeh Qaderi Rahaqi

In the quest for low power bio-inspired spiking sensors, functional oxides like vanadium dioxide are expected to enable future energy efficient sensing. Here, we report uncooled millimeter-wave spiking detectors based on the sensitivity of insulator-to-met ...

SPRINGERNATURE2023

Method for operating a frequency agile tunable self-injection locking laser system and self-injection locking laser system

Tobias Kippenberg, Anat Siddharth, Grigorii Likhachev

The invention relates to a Method for operating a frequency agile tunable self-injection locking laser system being formed by a laser device coupled to at least one optical resonator, wherein a diode current of a laser diode of the laser device is controll ...

2023

Charge sensing properties ofmonolithic CMOS pixel sensors fabricated in a 65 nm technology

Francesco Piro

In this work the initial performance studies of the first small monolithic pixel sensors dedicated to charged particle detection, called CE-65, fabricated in the 65nm TowerJazz Panasonic Semiconductor Company are presented. The tested prototypes comprise m ...

ELSEVIER2022

Modeling the electrical characteristic of InGaN/GaN blue-violet LED structure under electrical stress

Nicolas Grandjean, Jean-François Carlin, Camille Haller

The role of deep defects and their physical origin in InGaN/GaN LED are still widely investigated and debated, in particular their impact on the electrical and optical characteristics and on the reliability of the device. In this paper we evaluate the elec ...

PERGAMON-ELSEVIER SCIENCE LTD2022

GaN vertical power devices on silicon substrates

Riyaz Mohammed Abdul Khadar

Gallium Nitride (GaN) is a wonder material which has widely transformed the world by enabling energy-efficient white light-emitting diodes. Over the past decade, GaN has also emerged as one of the most promising materials for developing power devices which ...

EPFL2021

Current Limiting in Overload Conditions of an LLC-Converter-Based DC Transformer

Drazen Dujic, Jakub Kucka

The dc transformers based on an LLC converter operated in open loop near resonant frequency have several crucial advantages compared to other topologies. These advantages are the stiff voltage ratio with a natural power flow, the dc grid isolation via medi ...

2021

High-Frequency GaN-on-Si power integrated circuits based on Tri-Anode SBDs

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Jun Ma, Halil Kerim Yildirim, Luca Nela, Georgios Kampitsis

In this work, we report on the switching performance of AlGaN/GaN lateral Tri-Anode SBDs. The Tri-Anode architecture leads to a more than 50% reduction in the device charge with respect to conventional planar structure, confirmed both by capacitive and rev ...

IEEE2020

WSe2/SnSe2 vdW heterojunction Tunnel FET with subthermionic characteristic and MOSFET co-integrated on same WSe2 flake

Mihai Adrian Ionescu, Matteo Cavalieri, Nicolò Oliva, Luca Capua

Two-dimensional/two-dimensional (2D/2D) heterojunctions form one of the most versatile technological solutions for building tunneling field effect transistors because of the sharp and potentially clean interfaces resulting from van der Waals assembly. Seve ...

NATURE PUBLISHING GROUP2020

Analysis of Large-Signal Output Capacitance of Transistors using Sawyer–Tower Circuit

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Armin Jafari, Palliyage Srilak Nirmana Perera, Georgios Kampitsis, Jessy Anthony Ançay

A detailed analysis on the Sawyer–Tower method used in the measurement of large-signal output capacitance (Co) of power transistors is presented, followed by important design recommendations to obtain accurate results. Key factors affecting the proper impl ...

2020

Deexcitation Characterization for Power Supply Protection in DC Shipboard Power Systems

Drazen Dujic, Seongil Kim

The deexcitation of a synchronous machine has been used for the protection of the power supply based on a diode rectifier in marine dc power distribution networks. The fault current from the generator can be eliminated with the protection method utilizing ...

IEEE2020

97.4%-Efficient All-GaN Dual-Active-Bridge Converter with High Step-up High-Frequency Matrix Transformer

Elison de Nazareth Matioli, Armin Jafari, Palliyage Srilak Nirmana Perera, Mohammad Samizadeh Nikooytabalvandani

In this work, we demonstrate a state-of-the-art high step-up/down dual-active-bridge (DAB) converter designed with GaN transistors, to achieve a high efficiency and large power-density. A quasi-planar matrix transformer with high step-up/down ratio is demo ...

2020

Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects

Mihai Adrian Ionescu, Igor Stolichnov, Ali Saeidi, Teodor Rosca, Matteo Cavalieri

Nanowire tunnel field-effect transistors (TFETs) have been proposed as the most advanced one-dimensional (1D) devices that break the thermionic 60 mV/decade of the subthreshold swing (SS) of metal oxide semiconductor field-effect transistors (MOSFETs) by u ...

AMER CHEMICAL SOC2020

Gate-Tunable Tunneling Transistor Based on a Thin Black Phosphorus-SnSe2 Heterostructure

Klaus Kern, Marko Burghard

Tunneling field-effect transistors (TFETs) are of considerable interest owing to their capability of low-power operation. Here, we demonstrate a novel type of TFET which is composed of a thin black phosphorus-tin diselenide (BP-SnSe2) heterostructure. This ...

2019

Broadband Zero-Bias RF Field-Effect Rectifiers Based on AlGaN/GaN Nanowires

Elison de Nazareth Matioli, Giovanni Santoruvo, Mohammad Samizadeh Nikooytabalvandani

Microwave zero-bias rectifiers are fast devices capable of rectifying RF signals without applied bias, which have applications ranging from RF power detection to THz imaging systems. Here we present gated nanowire field-effect rectifiers (NW-FERs) fabricat ...

2019

Transient Current Technique characterization of bonded interfaces for monolithic silicon radiation detectors

Jacopo Bronuzzi

This thesis aims at demonstrating a novel technique for the characterization of interfaces obtained by a CMOS-compatible Surface Activated Bonding (SAB) process between silicon wafers. This enables the optimization of the two main components of monolithic ...

EPFL2018

Negative capacitance tunnel F£Ts: Experimental demonstration of outstanding simultaneous boosting of on-current, transconductance, overdrive, and swing

Mihai Adrian Ionescu, Igor Stolichnov, Farzan Jazaeri, Ali Saeidi

This paper demonstrates and experimentally reports the highest ever performance boosting in strained silicon-nanowire homojunction TFETs with negative capacitance, provided by matched PZT capacitors. Outstanding enhancements of I on , g m , and overdrive a ...

IEEE2018

Tunnel fet based non-volatile memory boosted by vertical band-to-band tunneling

Mihai Adrian Ionescu, Saurabh Tomar, Arnab Biswas

A tunnel field effect transistor (TFET), including a source region, a gate region, a channel region, and a drain region, the gate region including a gate stack, wherein an area of the source region that is facing the channel region is overlapped by the gat ...

2018

Metal Halide Perovskites as Mixed Electronic-Ionic Conductors: Challenges and Opportunities-From Hysteresis to Memristivity

Wolfgang Richard Tress

Metal halide perovskites are promising candidates for many classes of different optoelectronic devices. Apart from being a semiconductor, they additionally show ionic conductivity. It expresses itself in slow response times, reversible degradation, and hys ...

Amer Chemical Soc2017

Magnetic and thermodynamic properties of CuxTiSe2 single crystals

Helmuth Berger

We present a detailed study of the phase diagram of copper-intercalated TiSe2 single crystals, combining local Hall-probe magnetometry, tunnel diode oscillator technique (TDO), and specific-heat and angle-resolved photoemission spectroscopy measurements. A ...

Amer Physical Soc2017