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Related publications (30)

Band-bending induced passivation: high performance and stable perovskite solar cells using a perhydropoly(silazane) precursor

Mohammad Khaja Nazeeruddin, Mounir Driss Mensi, Yi Zhang, Sanghyun Paek, Giulia Grancini, Yonghui Lee, Kyung Taek Cho, Cristina Roldán Carmona, Hiroyuki Kanda, Aron Joel Huckaba, Valentin Ianis Emmanuel Queloz, Mo Li, Nadja Isabelle Desiree Klipfel

Surface passivation of the perovskite photo absorber is a key factor to improve the photovoltaic performance. So far robust passivation strategies have not yet been revealed. Here, we demonstrate a successful passivation strategy which controls the Fermi-l ...

2020

Loops in AdS: from the spectral representation to position space

Din Carmi

We compute a family of scalar loop diagrams in AdS. We use the spectral representation to derive various bulk vertex/propagator identities, and these identities enable to reduce certain loop bubble diagrams to lower loop diagrams, and often to tree- level ...

Springer Nature2020

High-performance nanowire-based E-mode Power GaN MOSHEMTs with large workfunction gate metal

Elison de Nazareth Matioli, Jun Ma, Luca Nela, Minghua Zhu

In this work, we demonstrate high-performance Enhancement-mode (E-mode) GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors (MOS-HEMTs) on Si substrate based on sidewall depletion achieved by nanostructured gate with large work-function metal. ...

Institute of Electrical and Electronics Engineers2019

Reduction of Fermi level pinning at Cu-BP interfaces by atomic passivation

Xiao Zhou, Cheng Chen, Pengfei Ou

Black phosphorus (BP) is a semiconducting material with a direct finite band gap in its monolayer, attracting intense attention for its application in field-effect transistors. However, strong Fermi level pinning (FLP) has been observed for contacts betwee ...

2019

Devices and Circuits Using Novel 2-D Materials: A Perspective for Future VLSI Systems

Giovanni De Micheli, Giovanni Vincenzo Resta, Pierre-Emmanuel Julien Marc Gaillardon

Here, we review the most recent developments in the field of 2-D electronics. We focus first on the synthesis of 2-D materials, discussing the different growth techniques currently available and assessing their strengths and weaknesses. Moreover, we descri ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2019

Unified picture of lattice instabilities in metallic transition metal dichalcogenides

Oleg Yazyev, Diego José Pasquier

Transition metal dichalcogenides (TMDs) in the 1T polymorph are subject to a rich variety of periodic lattice distortions, often referred to as charge-density waves (CDWs) when not too strong. We study from first principles the fermiology and phonon disper ...

AMER PHYSICAL SOC2019

Insights into the interfacial carrier behaviour of copper ferrite ( CuFe2O4) photoanodes for solar water oxidation

Kevin Sivula, Liang Yao, Nestor Guijarro Carratala, Florian Le Formal, Yongpeng Liu, Florent Alexandre Boudoire

Designing efficient yet robust photoanodes for water oxidation stands out as a major bottleneck in the realization of a feasible photoelectrochemical tandem cell for solar water splitting. Spinel copper ferrite (CuFe2O4) has been recently reported as a pot ...

Royal Society of Chemistry2019

Multiple morphologies and functionality of nanowires made from earth-abundant zinc phosphide

Anna Fontcuberta i Morral, Elias Zsolt Stutz, Thomas La Grange, Jean-Baptiste Leran, Mahdi Zamani, Simon Robert Escobar Steinvall, Nicolas Tappy, Rajrupa Paul, Reza Zamani

Semiconductors made of earth-abundant elements, such as zinc phosphide, have the potential to substitute less abundant, highly functional compound semiconductors such as InAs or InP. Compound semiconductors in the form of nanowires could revolutionise appl ...

2020

Super-geometric electron focusing on the hexagonal Fermi surface of PdCoO2

Philip Johannes Walter Moll, Maja Deborah Bachmann, Matthias Carsten Putzke

Geometric electron optics may be implemented in solids when electron transport is ballistic on the length scale of a device. Currently, this is realized mainly in 2D materials characterized by circular Fermi surfaces. Here we demonstrate that the nearly pe ...

Nature Research2019

1200 V Multi-Channel Power Devices with 2.8 Ω•mm ON-Resistance

Elison de Nazareth Matioli, Jun Ma, Luca Nela, Catherine Erine, Kai Cheng, Minghua Zhu

Here we report novel multi-channel AlGaN/GaN MOSHEMTs with high breakdown voltage (V BR ) and low ON-resistance (R ON ). The multi-channel structure was judiciously designed to yield a small sheet resistance (R s ) of 80 Ω/sq using only four 2DEG channels, ...

IEEE2019

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