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Related publications (32)

Memory chip or memory array for wide-voltage range in-memory computing using bitline technology

David Atienza Alonso, Marina Zapater Sancho, Alexandre Sébastien Julien Levisse, Marco Antonio Rios, William Andrew Simon

A random access memory having a memory array having a plurality of local memory groups, each local memory group including a plurality of bitcells arranged in a bitcell column, a pair of local bitlines operatively connected to the plurality of bitcells, a p ...

2021

Associativity-agnostic in-cache computing memory architecture optimized for multiplication

David Atienza Alonso, Marina Zapater Sancho, Alexandre Sébastien Julien Levisse, Marco Antonio Rios

A random access memory array including a plurality of local memory group ways, each local memory group way including, a plurality of local memory groups, each local memory group including, a memory column including a plurality of memory cells, a pair of lo ...

2021

Rethinking Software Runtimes for Disaggregated Memory

Sanidhya Kashyap, Ivan Puddu

Disaggregated memory can address resource provisioning inefficiencies in current datacenters. Multiple software runtimes for disaggregated memory have been proposed in an attempt to make disaggregated memory practical. These systems rely on the virtual mem ...

ASSOC COMPUTING MACHINERY2021

Micro-architectural Analysis of Database Workloads

Utku Sirin

Database workloads have significantly evolved in the past twenty years. Traditional database systems that are mainly used to serve Online Transactional Processing (OLTP) workloads evolved into specialized database systems that are optimized for particular ...

EPFL2021

Running Efficiently CNNs on the Edge Thanks to Hybrid SRAM-RRAM In-Memory Computing

David Atienza Alonso, Giovanni Ansaloni, Alexandre Sébastien Julien Levisse, Marco Antonio Rios, Flavio Ponzina

The increasing size of Convolutional Neural Networks (CNNs) and the high computational workload required for inference pose major challenges for their deployment on resource-constrained edge devices. In this paper, we address them by proposing a novel In-M ...

IEEE2021

Modelling of vertical and ferroelectric junctionless technology for efficient 3D neural network compute cube dedicated to embedded artificial intelligence

David Atienza Alonso, Giovanni Ansaloni, Alexandre Sébastien Julien Levisse

This paper presents the set of simulation means used to develop the concept of N2C2 (neural network compute cube) based on a vertical transistor technology platform. On the basis of state-of-the-art junctionless nanowire transistors (JLNT), TCAD simulation ...

2021

Synthesis, structural and magnetic characterization of thin films of the chiral magnets CoZnMn and FeGe

Anna Kúkol'ová

Skyrmions are topologically protected nanometer-sized magnetic vortices that have sparked interest for future spintronics applications aiming at high-density, high-speed and low-power consuming magnetic memory devices. One type of skyrmions appears in non- ...

EPFL2021

System-level Design of Adaptive Wearable Sensors for Health and Wellness Monitoring

Elisabetta De Giovanni

In recent years, population aging and the consequent higher incidence of noncommunicable diseases, have increased the need for long-term health monitoring. Moreover, as healthcare cost is projected to grow substantially by 2030 in OECD countries, the deman ...

EPFL2021

High-Level Synthesis of Dynamically Scheduled Circuits

Lana Josipovic

High-Level Synthesis (HLS) tools generate hardware designs from high-level programming languages. These tools almost universally build datapaths that are controlled using a centralized controller which relies on a static, compile-time schedule to determine ...

EPFL2021

Software Support for Non-Volatile Memory (NVM) Programming

David Teksen Aksun

Non-Volatile Memory (NVM) is an emerging type of memory device that provides fast, byte-addressable, and high-capacity durable storage. NVM sits on the memory bus and allows durable data structures designs similar to the in-memory equivalent ones. Expensiv ...

EPFL2021

Replica Bit-Line Technique for Internal Refresh in Logic-Compatible Gain-Cell Embedded DRAM

Robert Giterman, Odem Harel

Embedded memories, mostly implemented with static random access memory (SRAM), dominate the area and power of integrated circuits. Gain-cell embedded DRAM (GC-eDRAM) is an alternative to SRAM due to its high density, low power consumption, and two-ported f ...

ELSEVIER SCI LTD2020

Gain-Cell Embedded DRAMs: Modeling and Design Space

Andreas Peter Burg, Adam Shmuel Teman, Robert Giterman, Andrea Bonetti

Among the different types of dynamic random-access memories (DRAMs), gain-cell embedded DRAM (GC-eDRAM) is a compact, low-power, and CMOS-compatible alternative to conventional static random-access memory (SRAM). GC-eDRAM achieves high memory density, as i ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

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