We present an aspect ratio dependent etching (ARDE) method, utilizing the Bosch dry etching process of silicon, to create the optimal silicon master microstructures for replication of polydimethylsiloxane (PDMS) microchannels that allow immobilizing C. ele ...
A monolithic process is developed for the fabrication of Si nanowires within thick Si substrates. A combination of anisotropic etch and sidewall passivation is utilized to protect and release Si lines during the subsequent deep etch. An etch depth of 10 mu ...
Optical nanocavities enhance light-matter interaction due to their high quality factors (Q) and small modal volumes (V). The control of light-matter interaction lies at the heart of potential applications for integrated optical circuits, including optical ...
Thermal scanning probe lithography (t-SPL) is an advanced lithography technique in
which a heated atomic force microscope tip locally modifies a sample material. Due to
the nanometer-sized tip apex diameter, t-SPL enables patterning of sub-10 nm structures ...
