Publications related to Zener diode

Nonlinear optical diode effect in a magnetic Weyl semimetal

Philip Johannes Walter Moll, Chunyu Guo, Hao Yang

Diode effects are of great interest for both fundamental physics and modern technologies. Electrical diode effects (nonreciprocal transport) have been observed in Weyl systems. Optical diode effects arising from the Weyl fermions have been theoretically co ...

Nature Portfolio2024

Demonstration of a Plasmonic Nonlinear Pseudodiode

Olivier Martin, Karim Achouri, Andrei Kiselev, Sergejs Boroviks

We demonstrate a nonlinear plasmonic metasurface that exhibits strongly asymmetric second-harmonic generation: nonlinear scattering is efficient upon excitation in one direction, and it is substantially suppressed when the excitation direction is reversed, ...

AMER CHEMICAL SOC2023

Electronic metadevices for terahertz applications

Elison de Nazareth Matioli, Mohammad Samizadeh Nikooytabalvandani

The evolution of electronics has largely relied on downscaling to meet the continuous needs for faster and highly integrated devices(1). As the channel length is reduced, however, classic electronic devices face fundamental issues that hinder exploiting ma ...

NATURE PORTFOLIO2023

ICRH assisted breakdown study on JET

Benoît Labit, Thomas Binderup Jensen, Haomin Sun

Ion cyclotron (IC) wave assisted breakdown has the potential to increase the robustness of plasma initiation during the ITER pre-fusion operation phase. Studies were performed at JET at ITER relevant loop electric field, E-loop ? 0.33 Vm(-1), and a range o ...

IOP Publishing Ltd2023

Charge sensing properties ofmonolithic CMOS pixel sensors fabricated in a 65 nm technology

Francesco Piro

In this work the initial performance studies of the first small monolithic pixel sensors dedicated to charged particle detection, called CE-65, fabricated in the 65nm TowerJazz Panasonic Semiconductor Company are presented. The tested prototypes comprise m ...

ELSEVIER2022

A Data-Driven Fault Location Algorithm Based on the Electromagnetic Time Reversal in Mismatched Media

Mario Paolone, Zhaoyang Wang, Zhe Chen

The classical electromagnetic time reversal (EMTR) fault location method in power systems can be time consuming, especially when a high location accuracy is desired. To cope with this issue, the concept of EMTR in mismatched media has recently been introdu ...

2021

GaN vertical power devices on silicon substrates

Riyaz Mohammed Abdul Khadar

Gallium Nitride (GaN) is a wonder material which has widely transformed the world by enabling energy-efficient white light-emitting diodes. Over the past decade, GaN has also emerged as one of the most promising materials for developing power devices which ...

EPFL2021

Gas breakdown mitigation in satellite slip rings

Ivo Furno, Alan Howling, Paul Jeroen Laureis Martens, Fabio Avino

Direct current (DC) gas breakdown is experimentally investigated for high-voltage circular conductors and insulators that reproduce the main features of a satellite slip ring. Breakdown voltages are measured in the pressure range 10 ...

2019

Novel Slanted Field Plate Technology for GaN HEMTs by Grayscale Lithography on Flowable Oxide

Elison de Nazareth Matioli, Jun Ma, Luca Nela, Taifang Wang

We report a novel process to achieve slanted field plate (S-FP), which is a field plate with a gradual increase thickness from gate edge towards drain - utilizing grayscale lithography on flowable oxide (FOX) in single process step, in which developed FOX ...

IEEE2019

High voltage switch for compact bidirectional dc-dc converter driving dielectric electroactive polymer actuators

Yves Perriard, Yoan René Cyrille Civet, Morgan Almanza, Raphaël Johannes Charles Mottet, Lucas Pniak

Driving DEAs requires time-varying high voltage power supplies, up to 18kV for 200um polymer layers. HV amplifiers are commonly used but bulky and expensive. Designing embedded actuators requires compact and efficient powersupplies. Furthermore, only a lit ...

2019

Gate-Tunable Tunneling Transistor Based on a Thin Black Phosphorus-SnSe2 Heterostructure

Klaus Kern, Marko Burghard

Tunneling field-effect transistors (TFETs) are of considerable interest owing to their capability of low-power operation. Here, we demonstrate a novel type of TFET which is composed of a thin black phosphorus-tin diselenide (BP-SnSe2) heterostructure. This ...

2019

Instability of p-i-n perovskite solar cells under reverse bias

Christophe Ballif, Quentin Thomas Jeangros, Florent Sahli, Arnaud Walter, Daniel Anthony Jacobs, Fan Fu, Ricardo Augusto Zanotto Razera, Sylvain Nicolay, Peter Joseph Fiala, Laura Ding, Chien-Jen Yang, Marion Solange Madeleine Dussouillez

Partial shading can trigger permanent damage in photovoltaic modules because the illuminated solar cells drive the shaded cells into reverse bias. Under reverse bias conditions, perovskite solar cells have been shown to degrade quickly due to processes tha ...

Royal Society of Chemistry2020

Devices and Circuits Using Novel 2-D Materials: A Perspective for Future VLSI Systems

Giovanni De Micheli, Giovanni Vincenzo Resta, Pierre-Emmanuel Julien Marc Gaillardon

Here, we review the most recent developments in the field of 2-D electronics. We focus first on the synthesis of 2-D materials, discussing the different growth techniques currently available and assessing their strengths and weaknesses. Moreover, we descri ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2019

Transient Current Technique characterization of bonded interfaces for monolithic silicon radiation detectors

Jacopo Bronuzzi

This thesis aims at demonstrating a novel technique for the characterization of interfaces obtained by a CMOS-compatible Surface Activated Bonding (SAB) process between silicon wafers. This enables the optimization of the two main components of monolithic ...

EPFL2018

900 V Reverse-Blocking GaN-on-Si MOSHEMTs With a Hybrid Tri-Anode Schottky Drain

Elison de Nazareth Matioli, Jun Ma, Minghua Zhu

In this letter, we present high-performance GaN-on-Si metal-oxide-semiconductor high electron mobility transistors with record reverse-blocking (RB) capability. By replacing the conventional ohmic drain with a hybrid tri-anode Schottky drain, a high revers ...

Institute of Electrical and Electronics Engineers2017

A Technique for Calculating Voltages Induced on Twisted-Wire Pairs Using the FDTD Method

Farhad Rachidi-Haeri, Marcos Rubinstein, Akiyoshi Tatematsu

Disturbances in low-voltage control circuits in substations and power plants occur due to lightning or switching surges. Adequate protection of electronic devices in low-voltage control circuits requires the capacity to predict surge phenomena and to evalu ...

Institute of Electrical and Electronics Engineers2017

Backward diodes using heavily Mg-doped GaN growth by ammonia molecular-beam epitaxy

Nicolas Grandjean, Marco Malinverni, Denis Martin, Hironori Okumura

We grew heavily Mg-doped GaN using ammonia molecular-beam epitaxy. The use of low growth temperature (740 degrees C) allows decreasing the incorporation of donor-like defects (

Amer Inst Physics2016

Emerging Technology Based Design of Primitives for Hardware Security

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon

Hardware security concerns such as IP piracy and hardware Trojans have triggered research into circuit protection and malicious logic detection from various design perspectives. In this paper, emerging technologies are investigated by leveraging their uniq ...

Assoc Computing Machinery2016

Avalanche noise diodes: A compact circuit model compatible with advanced CAD tools

Christian Enz, Pierre-André Farine, Cyril Botteron, Gabriele Tasselli

This paper proposes, for the first time, a compact model for avalanche noise diodes that can easily be inserted in advanced CAD tools. The model is based on the theory of the Read type microwave avalanche diodes. It fully accounts for the electronic tuning ...

IEEE2015

A Low Dark Count p-i-n Diode Based SPAD in CMOS Technology

Edoardo Charbon

In this paper, a novel CMOS single-photon avalanche diode (SPAD) is presented, and the device is designed using a vertical p-i-n diode construction. The p-i-n diode with a wide depletion region enables a low-noise operation. The proposed design achieves da ...

2015