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Related publications (30)

LiNiO Junction Gate for High-performance Enhancement-mode GaN Power Transistor

Taifang Wang

GaN metal-oxide-semiconductor high electron mobility transistors (MOS)HEMTs) offer outstanding properties for next-generation power electronics devices. The high conductivity, high voltage blocking capability, high operation frequency, and device-level int ...

EPFL2022

Blumino: The First Fully Integrated Analog SiPM With On-Chip Time Conversion

Edoardo Charbon, Andrei Ardelean, Emanuele Ripiccini, Andrada Alexandra Muntean, Esteban Venialgo Araujo

Blumino is the first analog silicon photomultiplier with integrated amplifier, comparator and time-to-digital converter (TDC). The combination of a photodetector together with on-chip readout circuitry enables system-level advantages, such as internal para ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2021

High Tuning Range Spiking 1R-1T VO2 Voltage-Controlled Oscillator for Integrated RF and Optical Sensing

Mihai Adrian Ionescu, Teodor Rosca, Fatemeh Qaderi Rahaqi

In this work we propose and experimentally validate a relaxation spiking oscillator architecture with ultra-high tuning range (higher than 400%, from 5KHz to more than 25kHz when the control voltage is varied from 2.5 to 5V) that exploits the reversible me ...

IEEE2021

Prototype mitre bends of the ex-vessel waveguide system for the ITER upper launcher: Thermal hydraulic simulations and experiments with off-center mm-wave beams

Timothy Goodman, René Chavan, Matteo Vagnoni, Anastasia Xydou, Humberto Torreblanca Quiroz

On ITER, long pulse gyrotrons are required as a power source for electron cyclotron heating (ECH) and current drive (CD). The microwaves are guided from the gyrotrons, which are placed far from the Tokamak, into the plasma by transmission lines (TLs) and a ...

2021

Investigation on Output Capacitance Losses in Superjunction and GaN-on-Si Power Transistors

Elison de Nazareth Matioli, Halil Kerim Yildirim, Armin Jafari, Palliyage Srilak Nirmana Perera, Mohammad Samizadeh Nikooytabalvandani

Low ON-resistance of advanced superjunction (SJ) and GaN-on-Si transistors is of great importance in power converters, however, the anomalous loss in their output capacitance (C OSS ) severely limits their performance. In this work, we use an energy-orient ...

IEEE2021

A cryogenic electro-optic interconnect for superconducting devices

Tobias Kippenberg, Amir Youssefi, Anton Lukashchuk, Nathan Rafaël Bernier, Liu Qiu, Itay Shomroni

A major challenge to the scalability of cryogenic computing platforms is the heat load associated with the growing number of electrical cable connections between the superconducting circuitry and the room-temperature environment. Compared with electrical c ...

2021

Learning From Demonstration and Interactive Control of Variable-Impedance to Cut Soft Tissues

Aude Billard, Rui Wu

In this article, we propose an approach to extract variable-impedance during cutting tasks from human demonstrations, so as to ease soft-tissue cutting by robots. We model the dynamic adjustment of the human arm during interactions with the tissue and tran ...

2021

Intrinsic switching in Si-doped HfO2: A study of Curie-Weiss law and its implications for negative capacitance field-effect transistor

Mihai Adrian Ionescu, Igor Stolichnov, Ali Saeidi, Teodor Rosca, Eamon Patrick O'Connor, Matteo Cavalieri, Carlotta Gastaldi, Sadegh Kamaei Bahmaei

HfO2-based ferroelectrics are considered a promising class of materials for logic and memory applications due to their CMOS compatibility and ferroelectric figures of merit. A steep-slope field-effect-transistor (FET) switch is a device for logic applicati ...

AMER INST PHYSICS2021

Capacitive sensor to monitor the level of drug inside an injector pen

Sylvain Paul Fernand Joly

Diabete is a disease which is spreading faster than ever, impacting now a larger population. Patients suffering from this disease need the injection of insulin to control extracellular sugar levels. Pharmaceutical companies developed injector pens to allow ...

EPFL2021

GaN-based power devices: Physics, reliability, and perspectives

Elison de Nazareth Matioli, Luca Nela, Riyaz Mohammed Abdul Khadar

Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the fabrication of power devices. Among the semiconductors for which power devices are already available in the market, GaN has the widest energy gap, the largest critical ...

AIP Publishing2021

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