Publications by Jean-Daniel Ganière

Temperature Dependent Exciton Funnel Dynamics in Uniform Strain Gradient Field Observed by Time-Resolved Photoluminescence

Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Mehran Shahmohammadi, Gwénolé Jean Jacopin

Elastic strain engineering is an important way to reversibly tune the properties of micro/nanoscale semiconductors for promising applications in the emerging advanced nanotechnologies, such as the strain enhanced high-mobility transistors, nanogenerators, ...

WILEY-V C H VERLAG GMBH2021

Excitonic Diffusion in InGaN/GaN Core–Shell Nanowires

Jean-Daniel Ganière, Hua Zhang, Mehran Shahmohammadi, Gwénolé Jean Jacopin

We report on the direct observation of the diffusion of carriers in graded InGaN/GaN quantum wells in a nanowire. By probing the local dynamics at the nanoscale, along the wire for different temperatures between 4 and 250 K, we conclude that this diffusion ...

American Chemical Society (ACS)2016

Exciton hopping probed by picosecond time-resolved cathodoluminescence

Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Mehran Shahmohammadi, Gwénolé Jean Jacopin

The exciton transport is studied in high quality ZnO microwires using time resolved cathodoluminescence. Owing to the available picosecond temporal and nanometer spatial resolution, a direct estimation of the exciton average speed has been measured. When r ...

American Institute of Physics2015

Biexcitonic molecules survive excitons at the Mott transition

Jean-François Carlin, Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Jacques Levrat, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Mehran Shahmohammadi, Georg Rossbach, Gwénolé Jean Jacopin

When the carrier density is increased in a semiconductor, according to the predictions of Sir Nevil Mott, a transition should occur from an insulating state consisting of a gas of excitons to a conductive electron-hole plasma. This crossover, usually refer ...

Nature Publishing Group2014

Exciton Drift in Semiconductors under Uniform Strain Gradients: Application to Bent ZnO Microwires

Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Mehran Shahmohammadi, Gwénolé Jean Jacopin, Ji Feng

Optimizing the electronic structures and carrier dynamics in semiconductors at atomic scale is an essential issue for innovative device applications. Besides the traditional chemical doping and the use of homo/heterostructures, elastic strain has been prop ...

American Chemical Society2014

Hopping process of bound excitons under an energy gradient

Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Mehran Shahmohammadi, Gwénolé Jean Jacopin

We report on the mechanism of hopping for bound excitons under an energy gradient. By means of a Monte-Carlo simulation, we show that this mechanism explains the movement of bound excitons observed experimentally. We show that the speed of the excitons dec ...

American Institute of Physics2014

Nanoindentation cracking in gallium arsenide: Part II. TEM investigation

Jean-Marc Breguet, Jean-Daniel Ganière, Johann Michler, Jacques Giovanola, Cédric Pouvreau

The nanoindentation fracture behavior of gallium arsenide (GaAs) is examined from two perspectives in two parent papers. In the first paper (part I), we address the morphology of the crack field induced by different types of indenters by means of in situ n ...

Cambridge University Press2013

Quantitative Cathodoluminescence Opens New Areas of Investigation in Semiconductor Research and Production

Jean-Daniel Ganière, Pierre Michel Corfdir

Cambridge, Cambridge University Press2013

Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates

Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Nicolas Grandjean, Pierre Michel Corfdir, Etienne François Olivier Giraud, Mehran Shahmohammadi

This article presents the dynamics of excitons in a-plane (Al,Ga)N/GaN single quantum wells of various thicknesses grown on bulk GaN substrates. For all quantum well samples, recombination is observed to be predominantly radiative in the low-temperature ra ...

Japan Society of Applied Physics2013

Impact of biexcitons on the relaxation mechanisms of polaritons in III-nitride based multiple quantum well microcavities

Jean-François Carlin, Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Jacques Levrat, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Gabriel Christmann, Pierre Michel Corfdir, Georg Rossbach

We report on the direct observation of biexcitons in a III-nitride based multiple quantum well microcavity operating in the strong light-matter coupling regime by means of nonresonant continuous wave and time-resolved photoluminescence at low temperature. ...

2012

Picosecond Time-Resolved Cathodoluminescence to Probe Exciton Dynamics in α-Plane (Al,Ga)N/GaN Quantum Wells

Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Samuel Sonderegger, Nicolas Grandjean, Laurent Balet, Pierre Michel Corfdir

Cambridge, Cambridge University Press2011

Time-resolved cathodoluminescence on polychromatic light emitting (In,Ga)N quantum wells grown on (11-22) GaN facets

Jean-François Carlin, Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Nicolas Grandjean, Eric Feltin, Dobri Simeonov, Pierre Michel Corfdir

We present a low-temperature time-resolved cathodoluminescence study on (In,Ga)N/GaN quantum wells grown on the (11-22) facets of non-coalesced ELO-GaN. Taking advantage of the quantum confined Stark effect, such structures have been proposed as promising ...

V C H Publishers, Suite 909, 220 E 23Rd St, New York, Ny 10010 Usa2011

Biexciton emission and crystalline quality of ZnO nano-objects

Jean-Philippe Ansermet, Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Pierre Stadelmann, Anas Mouti, Pierre Michel Corfdir, Elisa Papa

The design of cost-effective standards for the quality of nano-objects is currently a key issue toward their massive use for optoelectronic applications. The observation by photoluminescence of narrow excitonic and biexcitonic emission lines in semiconduct ...

Institute of Physics2011

Implementation of spatio-time-resolved cathodoluminescence spectroscopy for studying local carrier dynamics in a low dislocation density m-plane InGaN epilayer grown on a freestanding GaN substrate

Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Nicolas Grandjean, Pierre Michel Corfdir, Munehito Kagaya

Spatio-time-resolvedcathodoluminescence (STRCL) spectroscopy isimplemented to assess the local carrier dynamics in a 70 nm-thick, very low threading dislocation (TD) density, pseudomorphic m-plane In GaN epilayer grown on a freestanding GaN substrate by me ...

2011

One-dimensional exciton luminescence induced by extended defects in nonpolar GaN/(Al,Ga)N quantum wells

Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Pierre Stadelmann, Denis Martin, Jacques Levrat, Nicolas Grandjean, Raphaël Butté, Yadira Arroyo Rojas Dasilva, Tiankai Zhu, Pierre Michel Corfdir

In this study, we present the optical properties of nonpolar GaN/(Al,Ga)N single quantum wells (QWs) grown on either a- or m-plane GaN templates for Al contents set below 15%. In order to reduce the density of extended defects, the templates have been proc ...

Institute of Physics2011

Intrinsic dynamics of weakly and strongly confined excitons in nonpolar nitride-based heterostructures

Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Jacques Levrat, Nicolas Grandjean, Pierre Michel Corfdir

Both weakly and strongly confined excitons are studied by time-resolved photoluminescence in a nonpolar nitride-based heterostructure grown by molecular beam epitaxy on the a-facet of a bulk GaN crystal, with an ultralow dislocation density of 2 × 105 cm-2 ...

2011

Novel Picosecond Time-Resolved Cathodoluminescence to Probe Exciton Recombination Dynamics in GaN and GaN Based Heterostructures

Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Samuel Sonderegger, Nicolas Grandjean, Laurent Balet, Jelena Ristic, Pierre Michel Corfdir

Cambridge, Cambridge University Press2010

Exciton recombination dynamics in a-plane (Al,Ga)N/GaN quantum wells probed by picosecond photo and cathodoluminescence

Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Denis Martin, Samuel Sonderegger, Nicolas Grandjean, Laurent Balet, Tiankai Zhu, Pierre Michel Corfdir

We present a combined low-temperature time-resolved cathodoluminescence and photoluminescence study of exciton recombination mechanisms in a 3.8 nm thick a-plane (Al,Ga)N/GaN quantum well (QW). We observe the luminescence from QW excitons and from excitons ...

American Institute of Physics2010

Pyramidal GaAs/AlzGa1-zAs quantum wire/dot systems with controlled heterostructure potential

Jean-Daniel Ganière, Elyahou Kapon, Alok Rudra, Qing Zhu

The structural and optical properties of controlled-heterostructure-potential, low-dimensional GaAs/AlGaAs nanostructures self-formed during organometallic chemical vapor deposition in tetrahedral pyramids etched in (111) B-GaAs substrates, are investigate ...

American Physical Society2010

Electron localization by a donor in the vicinity of a basal stacking fault in GaN

Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Jelena Ristic, Pierre Michel Corfdir

We study the effects of the vicinity between a shallow donor nucleus and an I1-type basal stacking fault (BSF) in GaN. We propose a numerical calculation, in the “effective potential” formalism, of energies and envelope functions of electrons submitted to ...

2009