Publications by Jean-Michel Sallese

Cover Picture: Materials and Corrosion. 1/2025

Stefano Mischler, Jean-Michel Sallese, Anna Neus Igual Muñoz, Christian Leinenbach

Wiley2025

Corrosion Behavior of Heat-Treated Fe-Based Shape Memory Alloys

Stefano Mischler, Jean-Michel Sallese, Anna Neus Igual Muñoz

The influence of various heat treatments on the corrosion behavior of a novel iron-based shape memory alloy (Fe-SMA), Fe-17Mn-6Si-10Cr-4Ni-1(V,C), used as prestressing elements in civil engineering was examined through electrochemical corrosion methods. SM ...

2025

Design-Oriented Analytical Model for Nanowire Biosensors Including Dynamic Aspects

Jean-Michel Sallese, Farzan Jazaeri, Ashkhen Yesayan

Nanowire field-effect transistor (NW FET) biosensors are known to be highly sensitive devices that can detect extremely low concentrations of biomolecules. In this article, we present an analytical model alongside with numerical simulations to calculate th ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2025

High-rate, high-resolution single photon X-ray imaging: Medipix4, a large 4-side buttable pixel readout chip with high granularity and spectroscopic capabilities

Jean-Michel Sallese, Adil Koukab, Viros Sriskaran

The Medipix4 chip is the latest member in the Medipix/Timepix family of hybrid pixel detector chips aimed at high -rate spectroscopic X-ray imaging using high -Z materials. It can be tiled on all 4 sides making it ideal for constructing large -area detecto ...

Iop Publishing Ltd2024

Nanowire junctionless ISFET noise model in Verilog-A

Jean-Michel Sallese, Ashkhen Yesayan

In this paper, we validate the Verilog-A implementation of the nanowire ISFET model. Based on the developed code and EKV formalism, the flicker noise of the nanowire ISFET was studied. The Verilog-A code was validated by comparing the data obtained from th ...

2024

Detachable and Portable Moisture Sensors for Industrial Applications

Jean-Michel Sallese

This paper presents the design, fabrication and testing of an innovative moisture analyzer with a detachable and portable moisture sensor, which can compensate for both bulk density and temperature effects, thus allowing to detect the moisture content in g ...

Institute of Electrical and Electronics Engineers2024

Radiation response of 28 nm CMOS transistors at high proton and neutron fluences for high energy physics applications

Jean-Michel Sallese, Adil Koukab

The 28 nm CMOS technology was selected as a promising candidate to upgrade electronics of particle detectors at CERN. Despite the robustness of this node to ultra-high levels of total ionizing dose has been proven, the resilience to 10161MeVneq/cm2 fluence ...

2024

Characteristics and ultra-high total ionizing dose response of 22nm fully depleted silicon-on-insulator

Jean-Michel Sallese, Adil Koukab, Gennaro Termo

The radiation response of MOS transistors in a 22 nm Fully Depleted Silicon -On -Insulator (FDSOI) technology exposed to ultra -high total ionizing dose (TID) was investigated. Custom structures including n- and p -channel devices with different sizes and ...

Iop Publishing Ltd2024

Simplified EPFL HEMT Model

Jean-Michel Sallese, Farzan Jazaeri, Ashkhen Yesayan

This paper introduces a simplified and design-oriented version of the EPFL HEMT model [1], focusing on the normalized transconductance-to-current characteristic (Gm/ID). Relying on these figures, insights into GaN HEMT modeling in relation to technology of ...

IEEE Computer Society2024

Non Quasi-Static Model of DG Junctionless FETs

Jean-Michel Sallese, Farzan Jazaeri

In this paper an analytical non-quasi-static (NQS) model for long-channel symmetric double-gate junctionless field-effect transistors (JLFETs) operating in depletion mode is proposed for the first time. The model addresses the limitations of existing DC an ...

2024

Design space of quantum dot spin qubits

Jean-Michel Sallese, Farzan Jazaeri, Amin Rassekh

Solid-state qubits can be implemented with electrostatically confined quantum dots in semiconductors, allowing gate voltages to independently control the electrochemical potentials of each quantum dot. Quantum dots offer high levels of reliability and scal ...

ELSEVIER2023

Fab-to-fab and run-to-run variability in 130 nm and 65 nm CMOS technologies exposed to ultra-high TID

Jean-Michel Sallese, Adil Koukab, Stefano Michelis, Gennaro Termo

The discovery of a large fab-to-fab variability in the TID response of the CMOS technologies used in the design of ASICs for the particle detectors of the HL-LHC triggered a monitoring effort to verify the consistency of the CMOS production process over ti ...

IOP Publishing Ltd2023

Neutron- and Proton-Induced Degradation of MOS Transistors in 28 nm CMOS Technology (September 2023)

Jean-Michel Sallese, Adil Koukab

The 28 nm CMOS technology was selected as a promising candidate for upgrade of the electronics of particle detectors at CERN. Despite the robustness of this node to ultrahigh levels of total ionizing dose has been proven, the capability to withstand 1016 1 ...

Institute of Electrical and Electronics Engineers Inc.2023

The Timepix4 analog front-end design: Lessons learnt on fundamental limits to noise and time resolution in highly segmented hybrid pixel detectors

Jean-Michel Sallese, Adil Koukab

This manuscript describes the optimization of the front-end readout electronics for high granularity hybrid pixel detectors. The theoretical study aims at minimizing the noise and jitter. The model presented here is validated with both circuit post layout ...

2023

Low-Cost Portable Medical Device for the Detection and Quantification of Exosomes

Jean-Michel Sallese

The design, fabrication and testing of a low-cost portable medical device for the detection and quantification of exosomes is presented in this paper. The portable medical device comprises a sensor array that can detect the presence of exosomes and quantif ...

IEEE2023

Time-resolved multi-gate ion sensitive field effect transducer and system and method of operating the same

Jean-Michel Sallese, Adil Koukab

A time-resolved multi-gate ion sensitive field effect transducer, including a silicon layer, a P-doped region in the silicon layer and a first electrode in electric connection with the P doped region, a N-doped region in the silicon layer and a second elec ...

2023

Tunneling Current Through a Double Quantum Dots System

Jean-Michel Sallese, Farzan Jazaeri

Electrostatically confined quantum dots in semiconductors hold the promise to achieve high scalability and reliability levels for practical implementation of solid-state qubits where the electrochemical potentials of each quantum dot can be independently c ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Nonhysteretic Condition in Negative Capacitance Junctionless FETs

Jean-Michel Sallese, Farzan Jazaeri, Amin Rassekh

This article analyzes the design space stability of negative capacitance double-gate junctionless field-effect transistors (NCDG JLFETs). Using analytical expressions derived from a charge-based model, we predict instability condition, hysteresis voltage, ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Accounting for Optical Generation in the Quasi-Neutral Regions of Perovskite Solar Cells

Jean-Michel Sallese, Farzan Jazaeri, Michael Saliba, Parnian Ferdowsi

Predicting the performance of solar cells though analytical models is important for the theory-guided optimization of these devices. Earlier models neglect the impact of the optical generation in the quasi-neutral regions of a perovskite solar cell. Here, ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Design Space of Negative Capacitance in FETs

Jean-Michel Sallese, Farzan Jazaeri

Relying on the previously developed charge-based approaches, this paper presents a physics-based design space of negative capacitance in double-gate and bulk MOSFET architectures. The impact of thickness variation of the ferroelectric on the DC characteris ...

2022