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Vincent Pott

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Related publications (28)

Please note that this is not a complete list of this person’s publications. It includes only semantically relevant works. For a full list, please refer to Infoscience.

The high-mobility bended n-channel silicon nanowire transistor

Didier Bouvet, Vincent Pott, Mihai Adrian Ionescu, Kirsten Emilie Moselund, Luca De Michielis, Mohammad Najmzadeh

This work demonstrates a method for incorporating strain in silicon nanowire gate-all-around (GAA) n-MOSFETs by oxidation-induced bending of the nanowire channel and reports on the resulting improvement in device performance. The variation in strain measur ...

Institute of Electrical and Electronics Engineers2010

Capacitor-less memory and abrupt switch based on hysteresis characteristics in punch-through impact ionization mos transistor (PI-MOS)

Maher Kayal, Vincent Pott, Mihai Adrian Ionescu, Kirsten Emilie Moselund

The present invention exploits the impact ionization induced by drain voltage increase and the onset of a bipolar parasitic in an Omega-gate field effect metal oxide insulator transistor (called PI-MOS), in order to obtain a memory effect and abrupt curren ...

2009

Non-hysteretic punchthrough impact ionization MOS (PIMOS) transistor: Application to abrupt inverter and NDR circuits

Vincent Pott, Mihai Adrian Ionescu, Kirsten Emilie Moselund

The recently proposed PIMOS transistor can offer, by appropriate operation, non-hysteretic abrupt off-on transitions due to impact ionization if the action of its parasitic bipolar transistor is minimized. This work proposes non-hysteretic abrupt inverter ...

2008