Publications by Mihai Adrian Ionescu

CMOS-Compatible Antiferroelectric-Dielectric Capacitors for Multifunctional Energy Storage and Tunable Electronics

This work presents a CMOS-compatible multilayer platform integrating energy storage and tunable varactor functionality within a compact system. By co-integrating antiferroelectric (AFE) and dielectric (DE) layers, the design achieves tunability up to 28%, ...

IEEE2025

Nanomole Process: Enabling Localized Metallic Back-Gates for Enhanced Cryogenic Front-to-Back Coupling in FDSOI Quantum Dots

Mihai Adrian Ionescu, Michele Ghini

This paper introduces a novel integration method of localized metallic back-gates into fully-depleted silicon-on-insulator (FDSOI) multi-gate FETs, enabling robust front-to-back electrostatic coupling from room temperature to cryogenic conditions, without ...

2025

An Investigation of VO2 Nanowire Arrays for Integrated Sensing. From Non-Stochastic Nanowires to Stochastic Nanostructures

Igor Stolichnov, Mihai Adrian Ionescu, Andras Kis

This paper presents a novel nanoscale platform based on vanadium dioxide (VO2) two-terminal devices shaped like nanowires (NWs). For the first time we report CMOS compatible VO2 two-terminal devices with little-to-no stochasticity in the absence of electro ...

IEEE2025

Future of Computing: towards Energy Efficient Cognitive Chips

Mihai Adrian Ionescu

The exponential growth of Artificial Intelligence (AI) and the Internet of Things (IoT) demands a paradigm shift in hardware design to ensure energy-efficient, sustainable computing. This talk will explore emerging trends in low-power AI hardware for Edge ...

Institute of Electrical and Electronics Engineers Inc.2025

Pulsed Laser and Atomic Layer Deposition of CMOS-Compatible Vanadium Dioxide: Enabling Ultrathin Phase-Change Films

Igor Stolichnov, Mihai Adrian Ionescu

American Chemical Society (ACS)2025

Vanadium-Doped Hafnium Oxide: A High-Endurance Ferroelectric Thin Film with Demonstrated Negative Capacitance

Igor Stolichnov, Mihai Adrian Ionescu

This study proposes and validates a novel CMOS-compatible ferroelectric thin-film insulator made of vanadium-doped hafnium oxide (V:HfO2) by using an optimized atomic layer deposition (ALD) process. Comparative electrical performance analysis of metal-ferr ...

AMER CHEMICAL SOC2025

Wafer-Scale Demonstration of a Highly Sensitive Strain Sensor Based on Polycrystalline VO2

Mihai Adrian Ionescu

Vanadium dioxide (VO2) exhibits structural phase transition that can be triggered by thermal, electrical, and mechanical stimuli, making it a highly interesting material for MEMS/NEMS based sensors and actuators thanks to responsivity and exceptional sensi ...

Institute of Electrical and Electronics Engineers Inc.2025

Bridging Blood and Skin: Biomarker Profiling in Dermal Interstitial Fluid (dISF) for Minimally Invasive Diagnostics

Mihai Adrian Ionescu, Yann Christophe Sprunger

Understanding the biochemical relationship between serum and dermal interstitial fluid (dISF) is critical for advancing minimally invasive diagnostics with wearables and point of care devices focusing on most relevant biomarkers accessible in the ISF. This ...

MDPI AG2025

Integration of Cobalt Ferromagnetic Control Gates for Electrical and Magnetic Manipulation of Semiconductor Quantum Dots (Adv. Funct. Mater. 14/2025)

Mihai Adrian Ionescu, Victor Carle Adrien Boureau, Pasquale Scarlino, Michele Ghini

Wiley2025

Integration of Cobalt Ferromagnetic Control Gates for Electrical and Magnetic Manipulation of Semiconductor Quantum Dots

Mihai Adrian Ionescu, Victor Carle Adrien Boureau, Pasquale Scarlino, Michele Ghini

The rise of electron spin qubit architectures for quantum computing processors has led to a strong interest in designing and integrating ferromagnets to induce stray magnetic fields for electron dipole spin resonance (EDSR). The integration of nanomagnets ...

Wiley2025

Graphene-enhanced ferroelectric domain wall high-output memristor

Igor Stolichnov, Mihai Adrian Ionescu, Sadegh Kamaei Bahmaei, Ali Gilani, Felix Risch

Recent studies on memristive materials and technologies have expanded beyond conventional memory elements, driven by their potential application in novel information processing concepts. Among these materials, conductive domain walls in ferroics are especi ...

AIP American Institute of Physics2024

AC-Driven Aptamer-Decorated Graphene FET for Cortisol Detection

Mihai Adrian Ionescu, Yann Christophe Sprunger, Sadegh Kamaei Bahmaei, Ali Gilani

Accurately measuring cortisol levels is crucial for diagnosing and managing stress-related conditions. Among all biofluids containing cortisol, Interstitial fluid (ISF) offers distinct advantages such as stable pH, continuous extraction, and minimal contam ...

Institute of Electrical and Electronics Engineers Inc.2024

Cryogenic Front-to-Back Coupling in FD-SOI for Tunable Qubits by Localized Metallic Back-Gate

Mihai Adrian Ionescu, Michele Ghini

In this study, we develop and experimentally validate the integration of a localized metallic back-gate into a multi-gate silicon-on-insulator (SOI) field-effect transistor (FET), aimed at enabling front-gate coupling efficiency from room to cryogenic (mK) ...

IEEE2024

Aptamer-Decorated Graphene Channel Array with Liquid-Gating for Sensing Cortisol Stress Hormone

Mihai Adrian Ionescu, Sadegh Kamaei Bahmaei, Shokoofeh Sheibani, Ali Gilani

Accurate detection of cortisol hormone is essential for diagnosing and managing stress-related disorders. Found in various bodily fluids like tears, blood, sweat, and interstitial fluid (ISF), ISF stands out for its stable pH, continuous extraction, and re ...

Institute of Electrical and Electronics Engineers Inc.2024

Ultra-High Sensitivity Silicon Nanowire Array Biosensor Based on a Constant-Current Method for Continuous Real-Time pH and Protein Monitoring in Interstitial Fluid

Mihai Adrian Ionescu, Yann Christophe Sprunger, Ali Saeidi, Luca Capua

In this paper we demonstrate ultra-high sensitivity silicon nanowires pH and protein sensing on the same Silicon nanowire array platform by using a constant current method and monitoring the drain voltage as function of analyte concentration. The injected ...

IEEE2023

pH Quantification in Human Dermal Interstitial Fluid Using Ultra-Thin SOI Silicon Nanowire ISFETs and a High-Sensitivity Constant-Current Approach

Mihai Adrian Ionescu, Yann Christophe Sprunger, Luca Capua, Didier Locca

In this paper, we propose a novel approach to utilize silicon nanowires as high-sensitivity pH sensors. Our approach works based on fixing the current bias of silicon nanowires Ion Sensitive Field Effect Transistors (ISFETs) and monitor the resulting drain ...

MDPI2023

Millimeter-wave to near-terahertz sensors based on reversible insulator-to-metal transition in VO2

Mihai Adrian Ionescu, Teodor Rosca, Fatemeh Qaderi Rahaqi

In the quest for low power bio-inspired spiking sensors, functional oxides like vanadium dioxide are expected to enable future energy efficient sensing. Here, we report uncooled millimeter-wave spiking detectors based on the sensitivity of insulator-to-met ...

SPRINGERNATURE2023

Ferroelectric Junctionless Double-Gate Silicon-On-Insulator FET as a Tripartite Synapse

Igor Stolichnov, Mihai Adrian Ionescu, Ali Saeidi, Matteo Cavalieri, Carlotta Gastaldi, Sadegh Kamaei Bahmaei

In this work, we report the concept and experimentally demonstrate the first tunable ferroelectric (Fe) junctionless (JL) transistor (Fe-JLFET), capable of emulating the functionality of biological tri-partite synapses, which is an artificial three-termina ...

Institute of Electrical and Electronics Engineers2023

Ferroelectric Supercapacitors by Combining Polarization Switching and Negative Capacitance Effects for On-Chip Energy Storage

Mihai Adrian Ionescu, Carlotta Gastaldi, Sadegh Kamaei Bahmaei, Ali Gilani, Michele Ghini

In this work, we investigate the fundamental effects contributing to energy storage enhancement in on-chip ferroelectric electrostatic supercapacitors with doped high-k dielectrics. By optimizing energy storage density and efficiency in nanometer-thin stac ...

Institute of Electrical and Electronics Engineers2023

Ferroelectric gating of two-dimensional semiconductors for the integration of steep-slope logic and neuromorphic devices

Mihai Adrian Ionescu, Jürgen Brugger, Ali Saeidi, Carlotta Gastaldi, Sadegh Kamaei Bahmaei, Xia Liu

The co-integration of logic switches and neuromorphic functions could be used to create new computing architectures with low power consumption and novel functionalities. Two-dimensional (2D) semiconductors and ferroelectric materials could be potentially u ...

NATURE PORTFOLIO2023