Publications by Vladimir Iakovlev

25 Gbps direct modulation and 10 km data transmission with 1310 nm waveband wafer fused VCSELs

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Alexandru Mereuta, Andrei Caliman

Direct modulation at > 25 Gbps is achieved with 1310 nm wavelength wafer fused VCSELs by adjusting the strain in the quantum well active region and the cavity photon lifetime. 25 + Gbps large signal modulation with 10(-12) BER at 1310 nm across 10 km of st ...

Optical Soc Amer2016

A 1.5-W frequency-doubled semiconductor disk laser tunable over 40 nm at around 745 nm

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev

We report on a semiconductor disk laser emitting 1.5 W of output power at the wavelength of 745 nm via intracavity frequency doubling. The high power level and the >40 nm tuning range make the laser a promising tool for medical treatments that rely on phot ...

Spie-Int Soc Optical Engineering2016

>25 Gbps direct modulation and data transmission with 1310 nm waveband wafer fused VCSELs

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Alexandru Mereuta, Andrei Caliman

25 Gb/s transmission over 10 km of standard single mode fiber is demonstrated for 1300 nm wafer fused InP/GaAs VCSELs with increased strain in quantum wells and higher output coupling from the cavity. ...

Ieee2016

Polarization mode control of long-wavelength VCSELs by intracavity patterning

Benjamin Dwir, Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Alexandru Mereuta, Andrei Caliman, Zlatko Mickovic, Christopher Michael Long

Polarization mode control is enhanced in wafer-fused verticalcavity surface-emitting lasers emitting at 1310 nm wavelength by etching two symmetrically arranged arcs above the gain structure within the laser cavity. The intracavity patterning introduces bi ...

Optical Soc Amer2016

85 W VECSEL output at 1270 nm with conversion efficiency of 59 %

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Alexandru Mereuta, Andrei Caliman

We report on 1270 nm vertical-external-cavity surface-emitting lasers (VECSELs) with up to 59% conversion efficiency and maximum output power of 8.5 W (pump limited), at 5 degrees C heat sink temperature. These VECSELs comprised wafer-fused gain mirrors in ...

Optical Society of America2015

Recent progress in wafer-fused VECSELs emitting in the 1310 nm waveband

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Alexandru Mereuta, Andrei Caliman, Nicolas Volet

Over the last years we have continuously improved the performance of 1300 nm band VECSELs with wafer fused gain mirrors in the intra-cavity diamond and the flip-chip heat dissipation configurations. In this work we present recent results for gain mirrors t ...

Spie-Int Soc Optical Engineering2015

Increasing single mode power of 13-μm VCSELs by output coupling optimization

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Grigore Suruceanu, Alexandru Mereuta, Andrei Caliman, Zlatko Mickovic

We report on the single mode emission power enhancement of 1.3-mu m VCSELs by adjusting the reflectivity of the top GaAs-based DBR for output coupling optimization using selective removal of Bragg reflector layers. Devices with record single mode power of ...

Optical Society of America2015

Optical Injection and Lasing Dynamics in Long-Wavelength VCSELs With Intracavity Patterning

Benjamin Dwir, Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Alexandru Mereuta, Andrei Caliman, Zlatko Mickovic, Christopher Michael Long, Dalila Ellafi

We present the static and optical injection response of wafer-fused long-wavelength VCSELs with and without intracavity patterning. It is found that the extra optical cavity patterning increases the gain anisotropy between orthogonal polarization modes, in ...

Ieee-Inst Electrical Electronics Engineers Inc2015

750 nm 1.5 W frequency-doubled semiconductor disk laser with a 44 nm tuning range

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev

We demonstrate 1.5 W of output power at the wavelength of 750 nm by intracavity frequency doubling a wafer-fused semiconductor disk laser diode-pumped at 980 nm. An optical-to-optical efficiency of 8.3% was achieved using a bismuth borate crystal. The wave ...

Optical Society of America2015

Fabrication and performance of 1.3-mu m 10-Gb/s CWDM wafer-fused VCSELs grown by MOVPE

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Grigore Suruceanu, Alexandru Mereuta, Andrei Caliman, Zlatko Mickovic

Recent progress in the fabrication and performance of 1.3-mu m 10-Gb/s, low power consumption wafer-fused VCSELs grown by MOVPE under nitrogen atmosphere are presented and discussed. By optimization of the growth conditions and implementation of a cavity a ...

Elsevier Science Bv2015

Effect of Cavity Lifetime Variation on the Static and Dynamic Properties of 1.3-μm Wafer-Fused VCSELs

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Grigore Suruceanu, Alexandru Mereuta, Andrei Caliman, Zlatko Mickovic, Dalila Ellafi

We investigate experimentally the impact of photon cavity lifetime variations on the static and dynamic performance of high-speed 1.3-mu m wavelength wafer-fused vertical-cavity surface-emitting lasers (VCSELs). The photon lifetime is modified by decreasin ...

Ieee-Inst Electrical Electronics Engineers Inc2015

Optical injection locking of transverse modes in 1.3-mu m wavelength coupled-VCSEL arrays

Benjamin Dwir, Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Alexandru Mereuta, Andrei Caliman, Lukas Mutter, Christopher Michael Long

Optical injection locking of 1.3-mu m phase-locked VCSEL arrays defined by patterned tunnel junctions and wafer fusion is investigated experimentally and theoretically. The impact of the overlap between the master laser injection beam and the injected mode ...

Optical Society of America2014

Double-diamond high-contrast-gratings vertical external cavity surface emitting laser

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Pascal Gallo

A new design of vertical external cavity surface emitting laser (VECSEL) with diamond-based high contrast gratings is proposed. The self-consistent model of laser operation has been calibrated based on experimental results and used to optimize the new prop ...

Iop Publishing Ltd2014

High performance wafer-fused semiconductor disk lasers emitting in the 1300 nm waveband

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Alexandru Mereuta, Andrei Caliman, Nicolas Volet

We report for the first time on the performance of 1300 nm waveband semiconductor disc lasers (SDLs) with wafer fused gain mirrors that implement intracavity diamond and flip-chip heat dissipation schemes based on the same gain material. With a new type of ...

Optical Society of America2014

Wavelength control in fabrication of wafer fused VCSELs emitting in the 1310 nm waveband

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Grigore Suruceanu, Alexandru Mereuta, Andrei Caliman, Zlatko Mickovic

Emission wavelength setting of 1310nm-waveband VCSELs designed for coarse wavelength division multiplexing (CWDM) 4x10 Gbps fiber-optics transmission can be controlled thanks to the wafer fusion fabrication approach. This approach allows performing the cav ...

Spie-Int Soc Optical Engineering2014

Near-infrared wafer-fused vertical-cavity surface-emitting lasers for HF detection

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Grigore Suruceanu, Alexandru Mereuta, Andrei Caliman

1310 nm Wavelength VCSELs produce single mode emission in excess of 1 mW in the temperature range of 20-70 degrees C with a very low relative intensity noise of -148 dB/Hz. These devices have a broad tuning range of similar to 50 cm(-1) with variable tempe ...

Elsevier2014

High-power flip-chip semiconductor disk laser in the 1.3 μm wavelength band

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Alexandru Mereuta

We present 6.1 W of output power from a flip-chip semiconductor disk laser (SDL) emitting in the 1.3 mu m wavelength region. This is the first demonstration of a flip-chip SDL in this wavelength range with output powers that are comparable to those obtaine ...

Optical Soc Amer2014

Control of cavity lifetime of 1.5 mu m wafer-fused VCSELs by digital mirror trimming

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Grigore Suruceanu, Alexandru Mereuta, Andrei Caliman, Zlatko Mickovic, Dalila Ellafi

Digital chemical etching is used to trim the output mirror thickness of wafer-fused VCSELs emitting at a wavelength near 1.5 mu m. The fine control of the photon cavity lifetime thus achieved is employed to extract important device parameters and optimize ...

Optical Soc Amer2014

Numerical Analysis of Mode Discrimination by Intracavity Patterning in Long-Wavelength Wafer-Fused Vertical-Cavity Surface-Emitting Lasers

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Alexandru Mereuta, Andrei Caliman, Nicolas Volet

This paper presents an extensive numerical analysis of 1.3-mu m wavelength wafer-fused vertical-cavity surface-emitting lasers (VCSELs) incorporating intracavity patterning. Using a 3-D, self-consistent model of the physical phenomena in VCSELs, supported ...

Institute of Electrical and Electronics Engineers2014

Wafer-fused VECSELs emitting in the 1310 nm waveband

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Alexandru Mereuta, Andrei Caliman, Nicolas Volet, Kamil Pawel Pierscinski

Optically pumped wafer fused 1310 nm VECSELs have the advantage of high output power and wavelength agility. Gain mirrors in these lasers are formed by direct bonding of InAlGaAs/InP active cavities to Al(Ga) As/GaAs DBRs. We present for the first time Wat ...

Spie-Int Soc Optical Engineering2014