Publications by Kirsten Emilie Moselund

Scaled-Footprint Ultra-Low Power Cryogenic InGaAs/InP HEMTs with Record-High Combination of Low-Noise and High-Frequency Performance

Kirsten Emilie Moselund, Edoardo Charbon, Hung-Chi Han

In this work we demonstrate cryogenic InxGa1-xAs/InP HEMTs with highly scaled gate footprints, down to 380 × 40 nm2 for a single gate finger, and investigate the impact of footprint scaling on device performance. The 80% In channel devices show fT=622 GHz ...

Institute of Electrical and Electronics Engineers Inc.2025

Simulation and Fabrication of Monolithic III-V Photodetectors on Si: The Role of Growth Facets and Localization of Heterojunctions

Kirsten Emilie Moselund, Simone Iadanza

In this work, we provide important parameters to take into account when fabricating in-plane III-V photodetectors (PDs) integrated on silicon (Si) using template-assisted selective epitaxy (TASE). Their performance has previously been demonstrated, and her ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2024

Cryogenic quantum computer control signal generation using high-electron-mobility transistors

Kirsten Emilie Moselund

Multiplexed local charge storage, close to quantum processors at cryogenic temperatures could generate a multitude of control signals, for electronics or qubits, in an efficient manner. Such cryogenic electronics require generating quasi-static control sig ...

2024

Controlling lasing around exceptional points in coupled nanolasers

Kirsten Emilie Moselund

Coupled nanolasers are of growing interest for on-chip optical computation and data transmission, which requires an understanding of how lasers interact to form complex systems. The non-Hermitian interaction between two coupled resonators, when excited sel ...

2024

Surface Lattice Resonance Lasers with Epitaxial InP Gain Medium

Kirsten Emilie Moselund

Surface lattice resonance (SLR) lasers, where the gain is supplied by a thin-film active material and the feedback comes from multiple scattering by plasmonic nanoparticles, have shown both low threshold lasing and tunability of the angular and spectral em ...

AMER CHEMICAL SOC2024

Designed Semiconductor Network Random Lasers

Kirsten Emilie Moselund, Alexis Arnaudon

Conventional lasers typically support a well‐defined comb of modes. Coupling many resonators together to form larger complex cavities enables the design of the spatial and spectral distribution of modes, for sensitive and controllable on‐chip light sources ...

Wiley2024

Image sensitive spectral response of semiconductor random network lasers

Kirsten Emilie Moselund

We experimentally study the spectral lasing response of on-chip InP network random lasers under illumination of different input image shapes. Deep-learning models have become increasingly omipresent throughout society. However, they are blighted by exponen ...

SPIE-INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING2024

Single-Mode Laser in the Telecom Range by Deterministic Amplification of the Topological Interface Mode

Kirsten Emilie Moselund, Chang Won Lee

Photonic integrated circuits are paving the way for novel on-chip functionalities with diverse applications in communication, computing, and beyond. The integration of on-chip light sources, especially single-mode lasers, is crucial for advancing those pho ...

Amer Chemical Soc2024

Phase of Topological Lattice with Leaky Guided Mode Resonance

Kirsten Emilie Moselund, Chang Won Lee

Topological nature in different areas of physics and electronics has often been characterized and controlled through topological invariants depending on the global properties of the material. The validity of bulk-edge correspondence and symmetry-related to ...

MDPI2023

Plasma etching for fabrication of complex nanophotonic lasers from bonded InP semiconductor layers

Kirsten Emilie Moselund

Integrating optically active III-V materials on silicon/insulator platforms is one potential path towards improving the energy efficiency and performance of modern computing. Here we demonstrate the applicability of direct wafer bonding combined with plasm ...

ELSEVIER2023

Review: III-V infrared emitters on Si: fabrication concepts, device architectures and down-scaling with a focus on template-assisted selective epitaxy

Kirsten Emilie Moselund

The local integration of III-Vs on Si is relevant for a wide range of applications in electronics and photonics, since it combines a mature and established materials platform with desired physical properties such as a direct and tuneable bandgap and high m ...

IOP Publishing Ltd2023

Self-heating analysis of monolithically integrated hybrid III-V/Si PIN diode

Kirsten Emilie Moselund

Self-heating is a crucial effect in integrated nanophotonic devices regarding their power consumption. In this work, we employ coupled 3D thermo-electrical simulations to gain insight into the thermal behavior related to traps in a monolithic InP-InGaAs-In ...

SPIE-INT SOC OPTICAL ENGINEERING2022

Single-Mode Emission in InP Microdisks on Si Using Au Antenna

Kirsten Emilie Moselund, Anna Fischer

An important building block for on-chip photonic applications is a scaled emitter. Whispering gallery mode cavities based on III-Vs on Si allow for small device footprints and lasing with low thresholds. However, multimodal emission and wavelength stabilit ...

AMER CHEMICAL SOC2022

Coupled VO2 oscillators circuit as analog first layer filter in convolutional neural networks

Mihai Adrian Ionescu, Kirsten Emilie Moselund, Elisabetta Corti, Siegfried Karg

In this work we present an in-memory computing platform based on coupled VO2 oscillators fabricated in a crossbar configuration on silicon. Compared to existing platforms, the crossbar configuration promises significant improvements in terms of area densit ...

2021

A hybrid III-V tunnel FET and MOSFET technology platform integrated on silicon

Mihai Adrian Ionescu, Kirsten Emilie Moselund, Clarissa Convertino

InGaAs/GaAsSb tunnelling field-effect transistors and InGaAs metal-oxide-semiconductor field-effect transistors can be integrated on the same silicon substrate using conventional CMOS-compatible processes, creating a platform for potential use in low-power ...

NATURE RESEARCH2021

Scaled resistively-coupled VO2 oscillators for neuromorphic computing

Mihai Adrian Ionescu, Kirsten Emilie Moselund, Elisabetta Corti, Siegfried Karg

2020

Time-Delay Encoded Image Recognition in a Network of Resistively Coupled VO2 on Si Oscillators

Kirsten Emilie Moselund, Siegfried Karg

Oscillatory neural networks based on insulator to metal transition of VO2 switches are implemented for image recognition. The VO2 oscillators are fabricated on silicon in a CMOS compatible process.A fullyconnected network of coupled oscillators is investig ...

Institute of Electrical and Electronics Engineers2020

VO2 oscillators coupling for Neuromorphic Computation

Igor Stolichnov, Mihai Adrian Ionescu, Kirsten Emilie Moselund, Elisabetta Corti, Siegfried Karg

New computation schemes inspired by biological processes can outperform standard von-Neumann architectures in dealing with complex and unstructured tasks. As a new approach, systems of frequency-locked, coupled oscillators are investigated using the phase ...

IEEE2019

Sub-Thermionic Scalable III-V Tunnel Field-Effect Transistors Integrated on Si (100)

Mihai Adrian Ionescu, Kirsten Emilie Moselund

We present scalable III-V heterojunction tunnel FETs fabricated using a Si CMOS-compatible FinFET process flow and integrated on Si (100) substrates. The tunneling junction is fabricated through self-aligned selective p(+) GaAsSb raised source epitaxial re ...

IEEE2019

Crystal Phase Tuning in Planar Films of III-V Semiconductors

Kirsten Emilie Moselund, Anna Fontcuberta i Morral, Nicolas Tappy

We report on the control of the crystal phase of micron-sized planar III-V semiconductor films grown on top of standard (001) oriented substrates. We achieve this by confining the MOCVD process using SiO2 templates and selecting specific growth planes. We ...

IEEE2019