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Marco Rossetti

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Related units (1)

CMI - Administration

EPFL
VPA-AVP-CP
CMI
CMI-GE

Related publications (10)

Please note that this is not a complete list of this person’s publications. It includes only semantically relevant works. For a full list, please refer to Infoscience.

InGaN laser diode with metal-free laser ridge using n(+)-GaN contact layers

Denis Martin, Nicolas Grandjean, Marco Rossetti, Antonino Francesco Castiglia, Marco Malinverni, Camille Haller

We report on InGaN edge emitting laser diodes with a top metal electrode located beside the laser ridge. Current spreading over the ridge is achieved via a highly doped n(+)-type GaN layer deposited on top of the structure. The low sheet resistance of the ...

Iop Publishing Ltd2016

InGaN laser diodes emitting at 500 nm with p-layers grown by molecular beam epitaxy

Denis Martin, Julien Dorsaz, Nicolas Grandjean, Marco Rossetti, Eric Feltin, Antonino Francesco Castiglia, Marco Malinverni, Jean-Michel Jacques Lamy, Lise Lahourcade

We demonstrate hybrid laser diodes by combining n-type layers and an active region grown by metal organic vapor phase epitaxy with p-type layers grown by molecular beam epitaxy. These p-doped layers, grown at 740 degrees C, exhibit state-of-the-art electri ...

Japan Society of Applied Physics2015

AlGaN-Free Blue III-Nitride Laser Diodes Grown on c-Plane GaN Substrates

Jean-François Carlin, Julien Dorsaz, Gatien Cosendey, Nicolas Grandjean, Marco Rossetti, Eric Feltin, Antonino Francesco Castiglia

We report on the fabrication of InGaN-based multiple-quantum-well laser diodes (LDs) emitting at 420 nm. Structures with standard claddings (p-and n-AlGaN), asymmetric claddings (p-GaN and n-AlGaN), and AlGaN-free claddings were grown by metal organic vapo ...

2010