Roman Gysel

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Related publications (6)

Retention in nonvolatile silicon transistors with an organic ferroelectric gate

Didier Bouvet, Nava Setter, Alexander Tagantsev, Igor Stolichnov, Mihai Adrian Ionescu, Roman Gysel, Giovanni Antonio Salvatore, Sebastian Riester

A silicone-based one-transistor nonvolatile memory cell has been implemented by integration of a ferroelectric polymer gate on a standard n- type metal oxide semiconductor field effect transistor. The polarization reversal in the gate results in a stable a ...

AIP American Institute of Physics2009

1T Memory Cell Based on PVDF-TrFE Field Effect Transistor

Didier Bouvet, Nava Setter, Igor Stolichnov, Mihai Adrian Ionescu, Roman Gysel, Giovanni Antonio Salvatore, Sebastian Riester

Interest in PVDF-TrFE copolymers as ferroelectric material for Memory application is driven by the prospect of having low cost, low operating voltage and fully organic device. Some previous studies reported FET designs using copolymers [refs 1,2] but none ...

2008

Restricted domain growth and polarization reversal kinetics in ferroelectric polymer thin films

Nava Setter, Alexander Tagantsev, Igor Stolichnov, Pavel Mokry, Roman Gysel

2008

Polarisation reversal in ferroelectric PVDF and PZT films

Roman Gysel

Ferroelectrics are characterised by a spontaneous polarisation that can be reversed by an external electric field. The stability of the polarisation states and the possibility for controlled switching between the states render ferroelectric materials very ...

EPFL2008

Ferroelectric domains and piezoelectricity in monocrystalline Pb(Zr,Ti)O-3 nanowires

Nava Setter, Enrico Colla, Silviu Cosmin Sandu, Roman Gysel, Harry Joseph Trodahl, Jian Wang, Yi Wang

2007

Ferroelectric film switching via oblique domain growth observed by cross-sectional nanoscale imaging

Nava Setter, Alexander Tagantsev, Igor Stolichnov, Roman Gysel

2006

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