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Fabien Devynck

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Related publications (11)

Please note that this is not a complete list of this person’s publications. It includes only semantically relevant works. For a full list, please refer to Infoscience.

Charge transition levels of carbon-, oxygen-, and hydrogen-related defects at the SiC/SiO2 interface through hybrid functionals

Alfredo Pasquarello, Fabien Devynck, Peter Broqvist, Audrius Alkauskas

We calculate charge transition levels of various defects at the SiC/SiO2 interface within a scheme based on hybrid density functionals, which accurately reproduce the involved band gaps and band offsets. The defect levels are first evaluated in bulk models ...

2011

Defect levels of carbon-related defects at the SiC/SiO2 interface from hybrid functionals

Alfredo Pasquarello, Fabien Devynck, Peter Broqvist, Audrius Alkauskas

We investigate carbon single-atom and pair defects at the SiC/SiO2 interface as candidate defects for the density of defect states in the SiC band gap. In order to accurately describe the electronic defect levels with respect to the SiC band edges, we use ...

2011

Energy levels of candidate defects at interfaces SiC/SiO2 interfaces

Alfredo Pasquarello, Fabien Devynck, Peter Broqvist, Audrius Alkauskas

We determine energy levels of candidate defects for the high defect density observed just below the SiC conduction band at SiC/SiO 2 interfaces. We address C interstitials and H bridge defects which both show defect levels in the upper part of the SiC band ...

2010