Publications by Marcus Gonschorek

Physical Properties of Al1-xInxN/(AIN)/GaN (0.07

AlInN is a material which is known to be difficult to be grown among the III-nitride ternary compounds. It attracted much attention only recently and starts to be studied intensively mainly for electronic applications. The aim of this work is manifold. Var ...

EPFL2011

Self heating in AlInN/AlN/GaN high power devices: Origin and impact on contact breakdown and IV characteristics

Jean-François Carlin, Marcel Py, Nicolas Grandjean, Eric Feltin, Marcus Gonschorek

It is observed experimentally that high electron mobility transistor devices with short channel length processed from nitride AlInN/AlN/GaN heterostructures containing 2D electron gases (2DEGs) with densities beyond 2 x 10(13) cm(-2) exhibit temperatures u ...

American Institute of Physics2011

High-speed and low-noise AlInN/GaN HEMTs on SiC

Jean-François Carlin, Nicolas Grandjean, Eric Feltin, Marcus Gonschorek

A comparison of devices with different source-drain gaps has been performed on AlInN/GaN high electron mobility transistors (HEMTs) grown on SiC. The cut-off frequency is effectively improved through shrinking source drain space and reducing gate parasitic ...

Wiley2011

Low-Noise Microwave Performance of 0.1 mu m Gate AlInN/GaN HEMTs on SiC

Jean-François Carlin, Nicolas Grandjean, Eric Feltin, Marcus Gonschorek

We report the first microwave noise characterization of AlInN/GaN HEMTs. Transistors with a 0.1 mu m gate implemented on a semi-insulating SiC substrate achieve a maximum current density of 1.92 A/mm at V-GS = 0 V, a measured transconductance g(M) = 480 mS ...

2010

Ultrahigh-Speed AlInN/GaN High Electron Mobility Transistors Grown on (111) High-Resistivity Silicon with F-T=143 GHz

Jean-François Carlin, Nicolas Grandjean, Eric Feltin, Marcus Gonschorek

We report on ultrahigh-speed 80 nm AlInN/GaN high-electron-mobility transistors (HEMTs) grown on (111) high-resistivity silicon substrates. The devices feature a peak measured transconductance g(M) = 415 mS/mm, a maximum current of 1.43 A/mm with a ratio I ...

2010

High-Mobility AlGaN/GaN Two-Dimensional Electron Gas Heterostructure Grown on (111) Single Crystal Diamond Substrate

Marcel Py, Pierre Stadelmann, Denis Martin, Nicolas Grandjean, Marcus Gonschorek, Anas Mouti, Marco Malinverni

High mobility Al0.28Ga0.72N/GaN two-dimensional electron gas (2DEG) is achieved on ( 111) oriented single crystal diamond substrate. The surface morphology of the epilayer is free of cracks thanks to the use of an AlN interlayer for strain relaxation. The ...

2010

Metal-related gate sinking due to interfacial oxygen layer in Ir/InAlN high electron mobility transistors

Jean-François Carlin, Nicolas Grandjean, Marcus Gonschorek

We report on an annealing-induced "gate sinking" effect in a 2-nm-thin In0.17Al0.83N/AlN barrier high electron mobility transistor with Ir gate. Investigations by transmission electron microscopy linked the effect to an oxygen containing interlayer between ...

2010

Characterization of Plasma-Induced Damage of Selectively Recessed GaN/InAlN/AlN/GaN Heterostructures Using SiCl4 and SF6

Jean-François Carlin, Nicolas Grandjean, Marcus Gonschorek

We have investigated an inductively coupled plasma etching recipe using SiCl4 and SF6 with a resulting selectivity >10 for GaN in respect to InAlN. The formation of an etch-resistant layer of AlF3 on InAlN required about 1 min and was noticed by a 4-times- ...

2010

Proposal and Performance Analysis of Normally Off n(++) GaN/InAlN/AlN/GaN HEMTs With 1-nm-Thick InAlN Barrier

Jean-François Carlin, Nicolas Grandjean, Eric Feltin, Marcus Gonschorek

Design considerations and performance of n(++) GaN/InAlN/AlN/GaN normally off high-electron mobility transistors (HEMTs) are analyzed. Selective and damage-free dry etching of the gate recess through the GaN cap down to a 1-nm-thick InAlN barrier secures p ...

2010

100-nm-Gate (Al,In)N/GaN HEMTs Grown on SiC With F-T=144 GHz

Jean-François Carlin, Nicolas Grandjean, Eric Feltin, Marcus Gonschorek

One-hundred-nanometer-gate (Al, In) N/GaN highelectron- mobility transistors (HEMTs) grown on semi-insulating SiC achieve a maximum current density of 1.84 A/mm at V-GS = 0 V, an extrinsic transconductance of 480 mS/mm, and a peak current gain cutoff frequ ...

Institute of Electrical and Electronics Engineers2010

Exact determination of electrical properties of wurtzite Al1−xInxN/(AlN)/GaN heterostructures (0.07 ≤ x ≤ 0.21) by means of a detailed charge balance equation

Jean-François Carlin, Marcel Py, Nicolas Grandjean, Eric Feltin, Marcus Gonschorek

Cambridge, Cambridge University Press2010

102-GHz AlInN/GaN HEMTs on Silicon With 2.5-W/mm Output Power at 10 GHz

Jean-François Carlin, Nicolas Grandjean, Eric Feltin, Marcus Gonschorek

Grown on a (111) high-resistivity silicon substrate, 0.1-mu m gate AlInN/GaN high-electron mobility transistors (HEMTs) achieve a maximum current density of 1.3 A/mm, an extrinsic transconductance of 330 mS/mm, and a peak current gain cutoff frequency as h ...

Institute of Electrical and Electronics Engineers2009

Temperature mapping of Al0.85In0.15N/AlN/GaN high electron mobility transistors through micro-photoluminescence studies

Jean-François Carlin, Marcel Py, Nicolas Grandjean, Eric Feltin, Dobri Simeonov, Marcus Gonschorek

Crack-free lattice-matched Al0.85In0.15N/GaN heterostructures were grown on sapphire substrates with barrier thicknesses up to 100 nm which exhibit very high polarization-induced electron sheet density (>2.5 x 10(13) cm(-2)) located at the heterointerface. ...

2009

Analysis of degradation mechanisms in lattice-matched InAlN/GaN high-electron-mobility transistors

Jean-François Carlin, Nicolas Grandjean, Eric Feltin, Marcus Gonschorek

We address degradation aspects of lattice-matched unpassivated InAlN/GaN high-electron-mobility transistors (HEMTs). Stress conditions include an off-state stress, a semi-on stress (with a partially opened channel), and a negative gate bias stress (with so ...

2009

Ultrathin InAlN/AlN Barrier HEMT With High Performance in Normally Off Operation

Jean-François Carlin, Nicolas Grandjean, Marcus Gonschorek

We present GaN-based high electron mobility transistors (HEMTs) with a 2-nm-thin InAlN/AlN barrier capped with highly doped n(++) GaN. Selective etching of the cap layer results in a well-controllable ultrathin barrier enhancement-mode device with a thresh ...

Institute of Electrical and Electronics Engineers2009

Polarization field mapping of Al0.85In0.15N/AlN/GaN heterostructure

Jean-François Carlin, Nicolas Grandjean, Eric Feltin, Marcus Gonschorek, Anas Mouti

Off-axis electron holography has been used to measure the built-in potential profile across an Al0.85In0.15N/AlN/GaN high electron mobility transistor heterostructure. Profile measurements indicated a polarization-induced electric field of 6.9 MV/cm within ...

2009

Two-dimensional electron gas density in Al1-xInxN/AlN/GaN heterostructures (0.03

Jean-François Carlin, Marcel Py, Nicolas Grandjean, Eric Feltin, Marcus Gonschorek

Compared to the AlGaN alloy, which can only be grown under tensile strain on GaN, the AlInN alloy is predicted by Vegard's law to be lattice-matched (LM) on fully relaxed GaN templates for an indium content of similar to 17.5%, i.e., it can be grown either ...

2008

Effects of strain and composition on the lattice parameters and applicability of Vegard's rule in Al-rich Al1-xInxN films grown on sapphire

Jean-François Carlin, Nicolas Grandjean, Eric Feltin, Marcus Gonschorek

The lattice parameters and strain evolution in Al1-xInxN films with 0.07

2008

Technology and performance of InAlN/AlN/GaN HEMTs with gate insulation and current collapse suppression using ZrO2 or HfO2

Jean-François Carlin, Nicolas Grandjean, Eric Feltin, Marcus Gonschorek

We present the technology and performance of InAlN/AlN/GaN MOS HEMTs with gate insulation and surface passivation using ZrO2 or HfO2. About 10-nm-thick high-k dielectrics were deposited by MOCVD before the ohmic contact processing. Plasma pretreatment allo ...

2008

Barrier-layer scaling of InAlN/GaN HEMTs

Jean-François Carlin, Marcel Py, Nicolas Grandjean, Eric Feltin, Marcus Gonschorek

We discuss the characteristics of In0.17Al0.83N/GaN high-electron mobility transistors with barrier thicknesses between 33 and 3 nm, which are grown on sapphire substrates by metal-organic chemical vapor deposition. The maximum drain current (at V-G = +2.0 ...

Institute of Electrical and Electronics Engineers2008