Publications by Evgeny Milyutin

Electromechanical properties of Al0.9Sc0.1N thin films evaluated at 2.5 GHz film bulk acoustic resonators

Paul Muralt, Alvaro Artieda, Silviu Cosmin Sandu, Evgeny Milyutin, Ramin Matloub Aghdam

AlN films are employed in RF filters for wireless communication. We report on enhanced coupling factors k(t)(2) obtained by partial substitution of Al by Sc. Al0.88Sc0.12N films were deposited by reactive magnetron sputtering from an Al0.9Sc0.1 alloy targe ...

AIP American Institute of Physics2011

Theoretical and Experimental Study of Piezoelectric Modulated AlN Thin Films for Shear Mode BAW Resonators

Evgeny Milyutin

The use of acoustic resonators for sensors application has opened a new branch in research and applications of piezoelectric materials and devices. The first generation of such sensors is constituted by the quartz crystal microbalance (QCM) based on AT-cut ...

EPFL2011

Sputtering of (001)AlN thin films: Control of polarity by a seed layer

Jean-François Carlin, Paul Muralt, Denis Martin, Jürgen Brugger, Nicolas Grandjean, Evgeny Milyutin, Andreea Veronica Savu, Scott Harada

The authors report on the ability to control the polarity of sputter deposited AlN001 thin ﬁlms using seed layers. Reactive sputter deposition leads to N-polarity on any substrate hitherto applied, i.e., Si111, sapphire, SiO2, and polycrystalline metals su ...

American Vacuum Society2010

Piezoelectric resonator operating in thickness shear mode

Paul Muralt, Evgeny Milyutin

An acoustic wave resonator device comprising a resonant layer that comprises a series of side-by-side areas of first and second dielectric materials. In one embodiment the first dielectric material is a piezoelectric, in particular the first dielectric mat ...

2010

PMBAR* - shear mode TFBAR based on (001)AlN thin film Piezo-Modulated Bulk Acoustic wave Resonator

Paul Muralt, Evgeny Milyutin

A novel concept for shear mode Bulk Acoustic Resonators (BAR) is presented. It is based on c-axis oriented AlN thin films grown on silicon dioxide thin films, combined with interdigitated electrodes. Such a structure leads to an excitation of mainly shear ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2008

Shear mode bulk acoustic wave resonator based on c-axis oriented AIN thin film

Paul Muralt, Evgeny Milyutin

A shear mode resonator based on bulk waves trapped in c-axis oriented AlN thin films was fabricated, simulated, and tested. The active 1.55 mu m thick AlN layer was deposited on top of an acoustic Bragg reflector composed of SiO2/AlN lambda/4 layer pairs. ...

2008