Publications by Sebastian Riester

Magnetic domain wall propagation under ferroelectric control

Nava Setter, Igor Stolichnov, Harry Joseph Trodahl, Evgeny Mikheev, Sebastian Riester

Control of magnetic domain walls (DWs) and their propagation is among the most promising development directions for future information-storage devices. The well-established tools for such manipulation are the spin-torque transfer from electrical currents a ...

American Physical Society2012

Polarization Screening in Multiferroic (Ga,Mn)As/P(VDF-TrFE) Transistors

Nava Setter, Igor Stolichnov, Evgeny Mikheev, Sebastian Riester

Ferroelectric copolymers of polyvinylidene fluoride and trifluoroethylene are attractive gate materials because of a rather high remanent polarization, low dielectric permittivity, and easy integration on semiconductors due to the low processing temperatur ...

2011

Ferroelectric Polymer Gates for Persistent Field Effect Control of Ferromagnetism in (Ga,Mn)As Layers

Sebastian Riester

The growing demand for higher computing power and element density continuously drives the development of novel device concepts. One group of materials currently attracting a lot of interest are the magnetoelectric multiferroics, due to their potential for ...

EPFL2010

Retention in nonvolatile silicon transistors with an organic ferroelectric gate

Didier Bouvet, Nava Setter, Alexander Tagantsev, Igor Stolichnov, Mihai Adrian Ionescu, Roman Gysel, Giovanni Antonio Salvatore, Sebastian Riester

A silicone-based one-transistor nonvolatile memory cell has been implemented by integration of a ferroelectric polymer gate on a standard n- type metal oxide semiconductor field effect transistor. The polarization reversal in the gate results in a stable a ...

AIP American Institute of Physics2009

Toward a low-voltage multiferroic transistor: Magnetic (Ga,Mn)As under ferroelectric control

Nava Setter, Igor Stolichnov, Harry Joseph Trodahl, Sebastian Riester

The persistent field effect control of ferromagnetism in a diluted magnetic semiconductor by low-voltage polarizing pulses is demonstrated in a ferroelectric gate field effect transistor configuration. The Curie temperature of the (Ga,Mn)As channel is unam ...

AIP American Institute of Physics2009

Control of Ferromagnetism in a (Ga,Mn)As - Based Multiferroic System via a Ferroelectric Gate

Nava Setter, Igor Stolichnov, Harry Joseph Trodahl, Sebastian Riester

We report the implementation of a ferroelectric gate field effect transistor (FeFET) with a ferromagnetic (Ga,Mn)As conducting channel. The Curie temperature T-C in the channel is modulated by non-volatile poling of the gate. The ferroelectric state, and t ...

Amer Inst Physics, 2 Huntington Quadrangle, Ste 1No1 D, Melville, Ny 11747-4501 Usa2009

1T Memory Cell Based on PVDF-TrFE Field Effect Transistor

Didier Bouvet, Nava Setter, Igor Stolichnov, Mihai Adrian Ionescu, Roman Gysel, Giovanni Antonio Salvatore, Sebastian Riester

Interest in PVDF-TrFE copolymers as ferroelectric material for Memory application is driven by the prospect of having low cost, low operating voltage and fully organic device. Some previous studies reported FET designs using copolymers [refs 1,2] but none ...

2008

Non-volatile ferroelectric control of ferromagnetism in (Ga, Mn)As

Nava Setter, Igor Stolichnov, Harry Joseph Trodahl, Sebastian Riester

2008

Ferroelectric control of ferromagnetism in diluted magnetic semiconductors

Nava Setter, Igor Stolichnov, Harry Joseph Trodahl, Sebastian Riester

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2008