Publications by Livio Lattanzio

Semiconductor tunneling device

Mihai Adrian Ionescu, Luca De Michielis, Nilay Dagtekin, Livio Lattanzio, Cem Alper

The present invention concerns a semiconductor tunneling Field-Effect device including a source, a drain, at least one elongated semiconductor structure extending in an elongated direction, a first gate, and a second gate. The first gate has a length exten ...

2016

Two dimensional quantum mechanical simulation of low dimensional tunneling devices

Mihai Adrian Ionescu, Livio Lattanzio, Cem Alper, José Luis Padilla de la Torre, Pierpaolo Palestri

We present a 2-D quantum mechanical simulation framework based on self-consistent solutions of the Schrodinger and Poisson equations, using the Finite Element Method followed by tunneling current (direct and phonon assisted) calculation in post-processing. ...

Elsevier2015

Two Dimensional Quantum Mechanical Simulation of Low Dimensional Tunneling Devices

Mihai Adrian Ionescu, Livio Lattanzio, Cem Alper, José Luis Padilla de la Torre, Pierpaolo Palestri

We present a 2-D quantum mechanical simulation framework based on self-consistent solutions of Schrodinger-Poisson system, using the Finite Element Method. The quantum mechanical model includes direct as well as phonon-assisted transitions and it is applie ...

IEEE2014

Quantum Mechanical Study of the Germanium Electron-Hole Bilayer Tunnel FET

Mihai Adrian Ionescu, Luca De Michielis, Livio Lattanzio, Luca Selmi, Cem Alper, Pierpaolo Palestri

The electron-hole bilayer tunnel field-effect transistor (EHBTFET) is an electronic switch that uses 2-D-2-D sub-band-to-sub-band tunneling (BTBT) between electron and hole inversion layers and shows significant subthermal swing over several decades of cur ...

Ieee-Inst Electrical Electronics Engineers Inc2013

Tunneling and Occupancy Probabilities: How Do They Affect Tunnel-FET Behavior?

Mihai Adrian Ionescu, Kirsten Emilie Moselund, Luca De Michielis, Livio Lattanzio, Heike Riel

In this letter, the occupancy and tunneling probabilities of interband tunneling devices are studied, pointing out the fundamental function of the source Fermi-Dirac distribution. Particularly, the reason for the degraded subthreshold swing, which is typic ...

Institute of Electrical and Electronics Engineers2013

An innovative band-to-band tunneling analytical model and implications in compact modeling of tunneling-based devices

Mihai Adrian Ionescu, Luca De Michielis, Nilay Dagtekin, Livio Lattanzio, Luca Selmi, Arnab Biswas, Heike Riel

In this paper, an analytical band-to-band tunneling model is proposed, validated by means of drift-diffusion simulation and comparison with experimental data, implemented in Verilog-A, and finally proven with SPICE simulator through simulation of circuits ...

American Institute of Physics2013

Innovative Tunnel Field-Effect Transistor Architectures

Livio Lattanzio

EPFL2013

On the Static and Dynamic Behavior of the Germanium Electron-Hole Bilayer Tunnel FET

Mihai Adrian Ionescu, Luca De Michielis, Nilay Dagtekin, Livio Lattanzio

Tunnel FETs (TFETs) are being intensively investigated for their potential in achieving subthermal switching slopes and extremely low leakage currents. Recently, a promising concept has been proposed: the electron-hole bilayer TFET (EHBTFET), which exploit ...

Ieee-Inst Electrical Electronics Engineers Inc2012

Tunnel FET with non-uniform gate capacitance for improved device and circuit level performance

Mihai Adrian Ionescu, Luca De Michielis, Nilay Dagtekin, Livio Lattanzio, Cem Alper

IEEE2012

The electron–hole bilayer tunnel FET

Mihai Adrian Ionescu, Luca De Michielis, Livio Lattanzio

We propose a novel tunnel field-effect transistor (TFET) concept called the electron–hole bilayer TFET (EHBTFET). This device exploits the carrier tunneling through a bias-induced electron–hole bilayer in order to achieve improved switching and higher driv ...

Elsevier2012

Understanding the Superlinear Onset of Tunnel-FET Output Characteristic

Mihai Adrian Ionescu, Luca De Michielis, Livio Lattanzio

In this letter, we report that the source and channel Fermi-Dirac distributions in interband-tunneling-controlled transistors play a fundamental role on the modulation of the injected current. We explain the superlinear onset of the output characteristics ...

Institute of Electrical and Electronics Engineers2012

Complementary Germanium Electron-Hole Bilayer Tunnel FET for Sub-0.5-V Operation

Mihai Adrian Ionescu, Luca De Michielis, Livio Lattanzio

In this paper we present a novel device, the Germanium Electron-Hole Bilayer Tunnel FET (Ge EHBTFET), which exploits carrier tunneling through a bias-induced electron-hole bilayer. The proposed architecture provides a quasi-ideal alignment between the tunn ...

Institute of Electrical and Electronics Engineers2012

FinFET for high sensitivity ion and biological sensing applications

Mihai Adrian Ionescu, Livio Lattanzio, Sara Rigante

A double-gate (DG) fin field effect transistor (FinFET) is discussed as new label-free ion and biological sensor. Simulations as function of channel doping, geometrical dimensions, operation point and materials investigated the device response to an extern ...

2011

Tunnel-FET architecture with improved performance due to enhanced gate modulation of the tunneling barrier

Mihai Adrian Ionescu, Luca De Michielis, Livio Lattanzio, Luca Selmi, Pierpaolo Palestri

The Tunnel-FET (TFET) device is a gated reverse biased p-i-n junction whose working principle is based on the quantum mechanical Band-to-Band Tunneling (B2BT) mechanism [1]. The OFF-ON transition can be much more abrupt than for conventional MOSFETs, thus ...

IEEE2011

Electron-hole bilayer tunnel FET for steep subthreshold swing and improved ON current

Mihai Adrian Ionescu, Luca De Michielis, Livio Lattanzio

We propose a novel Tunnel field-effect transistor (TFET) concept called the electron-hole bilayer TFET (EHBTFET). This device exploits the carrier tunneling through a bias-induced electron-hole bilayer in order to achieve improved switching and higher driv ...

IEEE2011

Modeling the Temperature Dependence of Fe-FET Static Characteristics Based on Landau's Theory

Didier Bouvet, Mihai Adrian Ionescu, Giovanni Antonio Salvatore, Livio Lattanzio

The performance of a standard MOSFET degrades with the increase in temperature, impacting the power consumption of the device. In this paper, we report the opposite trend, which is reflected in an improvement of main performance factors in ferroelectric FE ...

2011

A tunneling field-effect transistor exploiting internally combined band-to-band and barrier tunneling mechanisms

Mihai Adrian Ionescu, Luca De Michielis, Livio Lattanzio, Arnab Biswas

This letter proposes a hybrid abrupt switch principle and a corresponding device architecture that combines quantum mechanical band-to-band and barrier tunneling mechanisms. The device overcomes the intrinsically low on-current (I-ON) of conventional tunne ...

AIP American Institute of Physics2011

The Curie temperature as a key design parameter of ferroelectric Field Effect Transistors

Didier Bouvet, Mihai Adrian Ionescu, Giovanni Antonio Salvatore, Livio Lattanzio

Interest in Ferroelectric FETs originates from their potential as non-volatile memories and, more recently, as abrupt switches. In this work, we focus on the role of the Curie temperature of the gate stack on the performance of Fe-FETs. The proposed study ...

IEEE2010

Abrupt switch based on internally combined band-to-band and barrier tunneling mechanisms

Mihai Adrian Ionescu, Luca De Michielis, Livio Lattanzio, Arnab Biswas

We report a simulation-based study of an all-silicon novel device which exploits internally combined quantum mechanical band-to-band and barrier tunneling mechanisms to overcome the intrinsic low current drive limitations of conventional silicon Tunnel FET ...

2010

Abrupt switch based on internally combined Band-To-Band and Barrier Tunneling mechanisms

Mihai Adrian Ionescu, Luca De Michielis, Livio Lattanzio, Arnab Biswas

We report a novel device which exploits the internally combined quantum mechanical Band-To-Band and Barrier Tunneling mechanisms to achieve improved performances and overcome the intrinsic low current drive limitations of conventional Tunnel FETs and the 6 ...

IEEE2010