Publications by Anurag Mangla | EPFL Graph Search

Design of ultra low-power RF oscillators based on the inversion coefficient methodology using BSIM6 model

Christian Enz, Anurag Mangla, Maria-Anna Chalkiadaki, Gabrielle Guitton

This paper presents a fast and accurate way to design and optimize LC oscillators using the inversion coefficient (IC). This methodology consists of four steps: linear analysis, nonlinear analysis, phase noise analysis, and optimization using a figure of m ...

2016

Role of the gate in ballistic nanowire SOI MOSFETs

Christian Enz, Jean-Michel Sallese, Anurag Mangla

In this paper we report the results of Monte-Carlo simulations performed on double-gate ballistic MOSFETs with a geometry such that the gates overlap only a fraction of the channel. We present a qualitative analysis of the simulation results highlighting t ...

Elsevier2015

FOSS EKV 2.6 parameter extractor

Jean-Michel Sallese, Wladyslaw Grabinski, Anurag Mangla, Antonios Bazigos, Farzan Jazaeri, Maria-Anna Chalkiadaki

The design of advanced integrated circuits (IC) in particular for low power analog and radio-frequency (RF) application becomes more complex as the device level modeling confronting challenges in micro- and nano-meter CMOS processes. As present CMOS techno ...

Ieee2015

Modeling nanoscale quasi-ballistic MOS transistors : a circuit design perspective

Anurag Mangla

The scaling of device technologies poses new challenges, not only in circuit design, but also in device modeling, especially because of the short-channel effects and the emergence of novel phenomena like ballistic transport. Nonetheless, it enables the des ...

EPFL2014

Modeling the Channel Charge and Potential in Quasi-Ballistic Nanoscale Double-Gate MOSFETs

Christian Enz, Jean-Michel Sallese, Anurag Mangla

In this paper, we present an analytical semiempirical model of the profile of the channel charge and potential in quasi-ballistic double-gate (DG) MOSFETs. The charge model is based on the premise of separating the charge density in the quasi-ballistic cha ...

Ieee-Inst Electrical Electronics Engineers Inc2014

Design methodology for ultra low-power analog circuits using next generation BSIM6 MOSFET compact model

Christian Enz, Anurag Mangla, Maria-Anna Chalkiadaki

The recently proposed BSIM6 bulk MOSFET compact model is set to replace the hitherto widely used BSIM3 and BSIM4 models as the de-facto industrial standard. Unlike its predecessors which were threshold voltage based, the BSIM6 core is charge based and thus ...

Elsevier2013

Evaluation of the BSIM6 compact MOSFET model's scalability in 40nm CMOS technology

Christian Enz, Yogesh Singh Chauhan, Anurag Mangla, Maria-Anna Chalkiadaki

IEEE2012