Publications by Martin Heiss | EPFL Graph Search

Polarization response of nanowires a la carte

Anna Fontcuberta i Morral, Martin Heiss, Esther Alarcon Llado, Eleonora Russo, Alberto Casadei, Francesca Amaduzzi

Thanks to their special interaction with light, semiconductor nanowires have opened new avenues in photonics, quantum optics and solar energy harvesting. One of the major challenges for their full technological deployment has been their strong polarization ...

Nature Publishing Group2015

III-V nanowire arrays: growth and light interaction

Anna Fontcuberta i Morral, Martin Heiss, Anna Dalmau Mallorquí, Gözde Tütüncüoglu, Sonia Conesa Boj, Esther Alarcon Llado, Eleonora Russo, Federico Matteini

Semiconductor nanowire arrays are reproducible and rational platforms for the realization of high performing designs of light emitting diodes and photovoltaic devices. In this paper we present an overview of the growth challenges of III-V nanowire arrays o ...

Institute of Physics2014

Tuning the g-factor of neutral and charged excitons confined to self-assembled (Al,Ga)As shell quantum dots

Yannik Fontana, Pierre Michel Corfdir, Anna Fontcuberta i Morral, Martin Heiss, Eleonora Russo

We study the neutral exciton (X) and charged exciton (CX) transitions from (Al,Ga) As shell quantum dots located in core-shell nanowires, in the presence of a magnetic field. The g-factors and the diamagnetic coefficients of both the X and the CX depend on ...

American Institute of Physics2014

Plastic and Elastic Strain Fields in GaAs/Si Core-Shell Nanowires

Christophe Ballif, Anna Fontcuberta i Morral, Martin Heiss, Sylvain Dunand, Sonia Conesa Boj, Eleonora Russo

Thanks to their unique morphology, nanowires have enabled integration of materials in a way that was not possible before with thin film technology. In turn, this opens new avenues for applications in the areas of energy harvesting, electronics, and optoele ...

American Chemical Society2014

Probing inhomogeneous composition in core/shell nanowires by Raman spectroscopy

Anna Fontcuberta i Morral, Martin Heiss, Gözde Tütüncüoglu, Sonia Conesa Boj, Esther Alarcon Llado, Eleonora Russo, Federico Matteini, Francesca Amaduzzi

Due to its non-destructive and its micro-spatial resolution, Raman spectroscopy is a powerful tool for a rapid structural and compositional characterization of nanoscale materials. Here, by combining the compositional dependence of the Raman peaks with the ...

American Institute of Physics2014

Three-dimensional nanoscale study of Al segregation and quantum dot formation in GaAs/AlGaAs core-shell nanowires

Yannik Fontana, Anna Fontcuberta i Morral, Martin Heiss, Sonia Conesa Boj, Eleonora Russo, Luca Francaviglia

GaAs/Al-GaAs core-shell nanowires fabricated by molecular beam epitaxy contain quantum confining structures susceptible of producing narrow photoluminescence (PL) and single photons. The nanoscale chemical mapping of these structures is analyzed in 3D by a ...

American Institute of Physics2014

Nanoskiving Core-Shell Nanowires: A New Fabrication Method for Nano-optics

Yannik Fontana, Anna Fontcuberta i Morral, Martin Heiss, Eleonora Russo

This paper describes the fabrication of functional optical devices by sectioning quantum-dot-in-nanowires systems with predefined lengths and orientations. This fabrication process requires only two steps, embedding the nanowires in epoxy and using an ultr ...

Amer Chemical Soc2014

Exciton footprint of self-assembled AlGaAs quantum dots in core-shell nanowires

Samuel Sonderegger, Yannik Fontana, Pierre Michel Corfdir, Anna Fontcuberta i Morral, Martin Heiss, Eleonora Russo

Quantum-dot-in-nanowire systems constitute building blocks for advanced photonics and sensing applications. The electronic symmetry of the emitters impacts their function capabilities. Here we study the fine structure of gallium-rich quantum dots nested in ...

American Physical Society2014

Quantum Dot Opto-Mechanics in a Fully Self-Assembled Nanowire

Yannik Fontana, Anna Fontcuberta i Morral, Martin Heiss, Eleonora Russo

We show that optically active quantum dots (QDs) embedded in MBE-grown GaAs/AlGaAs core-shell nanowires (NWs) are coupled to the NW mechanical motion. Oscillations of the NW modulate the QD emission energy in a broad range exceeding 14 meV. Furthermore, th ...

American Chemical Society2014

Photonic-Plasmonic Coupling of GaAs Single Nanowires to Optical Nanoantennas

Anna Fontcuberta i Morral, Martin Heiss, Gözde Tütüncüoglu, Eleonora Russo, Alberto Casadei, Federico Matteini

We successfully demonstrate the plasmonic coupling between metal nanoantennas and individual GaAs nanowires (NWs). In particular, by using dark-field scattering and second harmonic excitation spectroscopy in partnership with analytical and full-vector FDTD ...

American Chemical Society2014

Enhancement of Second Harmonic Signal in Nanofabricated Cones

Aleksandra Radenovic, Anna Fontcuberta i Morral, Martin Heiss, Fabrizia Dutto, Andrea Lovera, Oriol López Sánchez

Geometrical effects in optical nanostructures on nanoscale can lead to interesting phenomena such as inhibition of spontaneous emission,(1,2) high-reflecting omnidirectional mirrors, structures that exhibit low-loss-waveguiding,(3) and light confinement.(4 ...

2013

Self-assembled quantum dots in a nanowire system for quantum photonics

Marco Cantoni, Yannik Fontana, Anna Fontcuberta i Morral, Martin Heiss, Bernt Ketterer, Sonia Conesa Boj, Eleonora Russo, Nicola Marzari

Quantum dots embedded within nanowires represent one of the most promising technologies for applications in quantum photonics. Whereas the top-down fabrication of such structures remains a technological challenge, their bottom-up fabrication through self-a ...

Nature Publishing Group2013

Growth mechanisms and process window for InAs V-shaped nanoscale membranes on Si[001]

Anna Fontcuberta i Morral, Martin Heiss, Anna Dalmau Mallorquí, Gözde Tütüncüoglu, Sonia Conesa Boj, Esther Alarcon Llado, Eleonora Russo, Ignasi Canales Mundet

Organized growth of high aspect-ratio nanostructures such as membranes is interesting for opto-electronic and energy harvesting applications. Recently, we reported a new form of InAs nano-membranes grown on Si substrates with enhanced light scattering prop ...

Institute of Physics2013

Hybrid axial and radial Si-GaAs heterostructures in nanowires

Christophe Ballif, Anna Fontcuberta i Morral, Martin Heiss, Sylvain Dunand, Daniel Rüffer, Sonia Conesa Boj, Eleonora Russo

Hybrid structures are formed from materials of different families. Traditionally, group IV and III-V semiconductors have not been integrated together in the same device or application. In this work we present a new approach for obtaining Si-GaAs hybrid het ...

Royal Society of Chemistry2013

Semiconductor nanowires for efficient, sustainable solar energy harvesting

Anna Fontcuberta i Morral, Martin Heiss, Anna Dalmau Mallorquí

SPIE-Intl Soc Optical Eng2013

Electrical transport in C-doped GaAs nanowires: surface effects

Anna Fontcuberta i Morral, Martin Heiss, Esther Alarcon Llado, Eleonora Russo, Alberto Casadei, Fauzia Jabeen, Jil Schwender, Mohammad Ramezani

The resistivity and mobility of carbon-doped GaAs nanowires have been studied for different doping concentrations. Surface effects have been evaluated by comparing unpassivated with passivated nanowires. We directly see the influence of the surface: the pi ...

Wiley-Blackwell2013

Doping incorporation paths in catalyst-free Be-doped GaAs nanowires

Anna Fontcuberta i Morral, Carlo Colombo, Martin Heiss, Alberto Casadei

The incorporation paths of Be in GaAs nanowires grown by the Ga-assisted method in molecular beam epitaxy have been investigated by electrical measurements of nanowires with different doping profiles. We find that Be atoms incorporate preferentially via th ...

American Institute of Physics2013

Single-nanowire solar cells beyond the Shockley-Queisser limit

Anna Fontcuberta i Morral, Martin Heiss

Light management is of great importance in photovoltaic cells, as it determines the fraction of incident light entering the device. An optimal p-n junction combined with optimal light absorption can lead to a solar cell efficiency above the Shockley-Queiss ...

Nature Publishing Group2013

Exciton localization mechanisms in wurtzite/zinc-blende GaAs nanowires

Anna Fontcuberta i Morral, Martin Heiss, Emanuele Uccelli, Sonia Conesa Boj

We investigate the emission properties of excitons in GaAs nanowires containing quantum disks formed by structural alternation between the zinc-blende and wurtzite phases, by means of temperature-dependent photoluminescence. At 10 K the emission from an en ...

American Physical Society (APS)2013

Electrical contacts to single nanowires: a scalable method allowing multiple devices on a chip. Application to a single nanowire radial p-i-n junction

Anna Fontcuberta i Morral, Carlo Colombo, Martin Heiss, Anna Dalmau Mallorquí, Pierre Loïc Blanc

Semiconductor nanowires are currently at the forefront of research in the areas of nanoelectronics and energy conversion. In all these studies, realising electrical contacts and statistically relevant measurements is a key issue. We propose a method that e ...

Inderscience2013