Publications by Tomas Sluka | EPFL Graph Search

Physics and applications of charged domain walls

Alexander Tagantsev, Tomas Sluka, Petr Yudin, Petr Bednyakov

The charged domain wall is an ultrathin (typically nanosized) interface between two domains; it carries bound charge owing to a change of normal component of spontaneous polarization on crossing the wall. In contrast to hetero-interfaces between different ...

2018

Controlled Charging of Ferroelastic Domain Walls in Oxide Ferroelectrics

Li Jin, Tomas Sluka, Ludwig Feigl, Xiankui Wei, Barbara Maraston Fraygola

Conductive domain walls (DWs) in ferroic oxides as device elements are a highly attractive research topic because of their robust and agile response to electric field. Charged DWs possessing metallic-type conductivity hold the highest promises in this aspe ...

Amer Chemical Soc2017

Identification of microscopic domain wall motion from temperature dependence of nonlinear dielectric response

Pavel Mokry, Tomas Sluka

It is known that the permittivity of ferroelectric polydomain films and single crystals in weak electric fields is strongly enhanced by the reversible movement of pinned domain walls. Two mechanisms of the movement exist: first, the bending of free segment ...

Amer Inst Physics2017

Static negative capacitance of a ferroelectric nano-domain nucleus

Nava Setter, Pavel Mokry, Tomas Sluka

Miniaturization of conventional field effect transistors (FETs) approaches the fundamental limits beyond which opening and closing the transistor channel require higher gate voltage swing and cause higher power dissipation and heating. This problem could b ...

Amer Inst Physics2017

Charge screening strategy for domain pattern control in nano-scale ferroelectric systems

Nava Setter, Tomas Sluka

Strain engineering is a widespread strategy used to enhance performance of devices based on semiconductor thin films. In ferroelectrics strain engineering is used to control the domain pattern: When an epitaxial film is biaxially compressed, e.g. due to la ...

Nature Research2017

Identification of defect distribution at ferroelectric domain walls from evolution of nonlinear dielectric response during the aging process

Pavel Mokry, Tomas Sluka

The motion of ferroelectric domain walls greatly contributes to the macroscopic dielectric and piezoelectric response of ferroelectric materials. The domain-wall motion through the ferroelectric material is, however, hindered by pinning on crystal defects, ...

Amer Physical Soc2016

Neel-like domain walls in ferroelectric Pb(Zr,Ti)O-3 single crystals

Nava Setter, Tomas Sluka, Xiankui Wei

In contrast to the flexible rotation of magnetization direction in ferromagnets, the spontaneous polarization in ferroelectric materials is highly confined along the symmetry-allowed directions. Accordingly, chirality at ferroelectric domain walls was trea ...

Nature Publishing Group2016

Controlled creation and displacement of charged domain walls in ferroelectric thin films

Nava Setter, Silviu Cosmin Sandu, Tomas Sluka, Ludwig Feigl, Arnaud Robert André Crassous

Charged domain walls in ferroelectric materials are of high interest due to their potential use in nanoelectronic devices. While previous approaches have utilized complex scanning probe techniques or frustrative poling here we show the creation of charged ...

Nature Research2016

Piezoelectric enhancement under negative pressure

Nava Setter, Alexander Tagantsev, Silviu Cosmin Sandu, Jin Wang, Tomas Sluka, Alexander Kvasov

Enhancement of ferroelectric properties, both spontaneous polarization and Curie temperature under negative pressure had been predicted in the past from first principles and recently confirmed experimentally. In contrast, piezoelectric properties are expec ...

Nature Publishing Group2016

Free-Carrier-Compensated Charged Domain Walls Produced with Super-Bandgap Illumination in Insulating Ferroelectrics

Dragan Damjanovic, Nava Setter, Alexander Tagantsev, Tomas Sluka, Petr Bednyakov

Charged domain walls in ferroelectrics are movable and electronically conducting interfaces inside insulating materials. A simple and reliable method for their artificial production with ultraviolet (UV) light is described. The UV illumination produces fre ...

Wiley-Blackwell2016

Velocity Control of 180 degrees Domain Walls in Ferroelectric Thin Films by Electrode Modification

Nava Setter, Alexander Tagantsev, Tomas Sluka, Petr Yudin, Ludwig Feigl

The velocity of individual 1800 domain walls in thin ferroelectric films of PbZr0.1Ti0.9O3 is strongly dependent on the thickness of the top Pt electrode made by electron-beam induced deposition (EBID). We show that when the thickness is varied in the rang ...

Amer Chemical Soc2016

Thickness Dependence of Domain-Wall Patterns in BiFeO3 Thin Films

Nava Setter, Silviu Cosmin Sandu, Tomas Sluka, Arnaud Robert André Crassous

Unique properties of domain walls in ferroelectrics have been recently discovered but methods of their controlled engineering remain underdeveloped. Here we investigate the domain structure of Bi0.9La0.1FeO3 epitaxial thin films with piezoelectric force mi ...

Taylor & Francis2015

Anomalously thick domain walls in ferroelectrics (vol 91, 060102, 2015)

Nava Setter, Alexander Tagantsev, Maxim Gureev, Tomas Sluka, Petr Yudin

Amer Physical Soc2015

Bent Ferroelectric Domain Walls as Reconfigurable Metallic-Like Channels

Nava Setter, Alexander Tagantsev, Enrico Colla, Igor Stolichnov, Tomas Sluka, Petr Yudin, Ludwig Feigl, Xiankui Wei, Arnaud Robert André Crassous, Konstantin Shapovalov

Use of ferroelectric domain-walls in future electronics requires that they are stable, rewritable conducting channels. Here we demonstrate nontherrnally activated metallic-like conduction in nominally uncharged, bent, rewritable ferroelectric-ferroelastic ...

Amer Chemical Soc2015

Negative-pressure-induced enhancement in a freestanding ferroelectric

Nava Setter, Alexander Tagantsev, Marco Cantoni, Brahim Dkhil, Silviu Cosmin Sandu, Jin Wang, Tomas Sluka, Alexander Kvasov, Xiankui Wei

Ferroelectrics are widespread in technology(1), being used in electronics and communications(2), medical diagnostics and industrial automation. However, extension of their operational temperature range and useful properties is desired(3-5). Recent developm ...

Nature Publishing Group2015

Anomalously thick domain walls in ferroelectrics

Nava Setter, Alexander Tagantsev, Maxim Gureev, Tomas Sluka, Petr Yudin

Using the Landau theory we demonstrate the possibility of unusual, anomalously thick ferroelectric domain walls, where the order parameter rotates with a nearly constant modulus as in ferromagnets. The effect occurs in 90 degrees charged domain walls and i ...

Amer Physical Soc2015

Polarization charge as a reconfigurable quasi-dopant in ferroelectric thin films

Nava Setter, Alexander Tagantsev, Tomas Sluka, Arnaud Robert André Crassous

Impurity elements used as dopants are essential to semiconductor technology for controlling the concentration of charge carriers. Their location in the semiconductor crystal is determined during the fabrication process and remains fixed. However, another p ...

Nature Publishing Group2015

Formation of charged ferroelectric domain walls with controlled periodicity

Dragan Damjanovic, Nava Setter, Alexander Tagantsev, Tomas Sluka, Petr Bednyakov

Charged domain walls in proper ferroelectrics were shown recently to possess metallic-like conductivity. Unlike conventional heterointerfaces, these walls can be displaced inside a dielectric by an electric field, which is of interest for future electronic ...

Nature Publishing Group2015

Adaptive Vibration Suppression System: An Iterative Control Law for a Piezoelectric Actuator Shunted by a Negative Capacitor (vol 59, pg 2785, 2012)

Pavel Mokry, Tomas Sluka

Ieee-Inst Electrical Electronics Engineers Inc2014

Electronic elements based on quasitwo-dimensional electron/hole gas at charged domain walls in ferroelectrics

Alexander Tagantsev, Tomas Sluka

The present invention relates to a device including a ferroic material having a ferroelectric order parameter and including at least two domains, as well as a first and second electrode in electrical contact with the ferroic material. The device is configu ...

2014