Publications by Lukas Kull | EPFL Graph Search

A 161-mW 56-Gb/s ADC-Based Discrete Multitone Wireline Receiver Data-Path in 14-nm FinFET

Yusuf Leblebici, Alessandro Cevrero, Andreas Peter Burg, Gain Kim, Lukas Kull, Thomas Toifl, Cosimo Aprile, Ilter Ozkaya

This article introduces a wireline receiver (RX) data-path employing discrete multi-tone (DMT) modulation for communicating over electrical links. The DMT RX incorporates a fully digital equalization data-path, with a synthesized and automatically placed a ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

A 4.8pJ/b 6Gb/s ADC-Based PAM-4 Wireline Receiver Data -Path with Cyclic Prefix in 14nm FinFET

Yusuf Leblebici, Alessandro Cevrero, Andreas Peter Burg, Gain Kim, Lukas Kull, Thomas Toifl, Cosimo Aprile, Ilter Ozkaya

This work presents an ADC-bascd receiver (RX) data-path for frame-based PAM-4 modulation with a cyclic prefix (CP). Similar to discrete multi-tone (DMT) modulation, a frame of PAM-4 symbols arc protected from the channel delay spread by the CP taps. A PAM- ...

IEEE2019

A 161mW 56Gb/s ADC-Based Discrete Multitone Wireline Receiver Data-Path in 14nm FinFET

Yusuf Leblebici, Alessandro Cevrero, Andreas Peter Burg, Gain Kim, Lukas Kull, Thomas Toifl, Cosimo Aprile, Ilter Ozkaya

IEEE2019

A 60-Gb/s 1.9-pJ/bit NRZ Optical Receiver With Low-Latency Digital CDR in 14-nm CMOS FinFET

Yusuf Leblebici, Alessandro Cevrero, Lukas Kull, Thomas Toifl, Ilter Ozkaya

2018

Design Techniques for High-Speed Multi-Level Viterbi Detectors and Trellis-Coded-Modulation Decoders

Andreas Peter Burg, Lukas Kull, Thomas Toifl, Giovanni Cherubini

The implementation of a 25.6-Gb/s four-level pulse-amplitude-modulation (4-PAM) reduced-state sliding-block Viterbi detector (VD) is presented. The power consumption of the VD is 105 orilV at a supply voltage of 0.7 V, corresponding to an energy efficiency ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2018

A 56Gb/s Burst-Mode NRZ Optical Receiver with 6.8ns Power-On and CDR-Lock Time for Adaptive Optical Links in 14nm FinFET CMOS

Yusuf Leblebici, Alessandro Cevrero, Lukas Kull, Thomas Toifl, Ilter Ozkaya

IEEE2018

Parallel Implementation Technique of Digital Equalizer for Ultra-High-Speed Wireline Receiver

Yusuf Leblebici, Alessandro Cevrero, Gain Kim, Lukas Kull, Thomas Toifl, Cosimo Aprile, Ilter Ozkaya

This paper presents a parallel implementation technique of digital equalizer for high-speed wireline serial link receiver (RX). In wireline RX, inter-symbol interference (ISI) is mitigated by continuous-time linear equalizer, and the remaining ISI is cance ...

2018

A 112Gb/s 2.6pJ/b 8-Tap FFE PAM-4 SST TX in 14nm CMOS

Alessandro Cevrero, Lukas Kull, Thomas Toifl, Ilter Ozkaya

IEEE2018

A 24-to-72GS/s 8b Time-Interleaved SAR ADC with 2.0-to-3.3pJ/conversion and > 30dB SNDR at Nyquist in 14nm CMOS FinFET

Alessandro Cevrero, Lukas Kull, Thomas Toifl, Ilter Ozkaya

IEEE2018

An Eight lanes 7Gb/s/pin Source Synchronous Single-Ended RX with Equalization and Far-End Crosstalk Cancellation for Backplane Channels

Yusuf Leblebici, Alessandro Cevrero, Lukas Kull, Volkan Cevher, Thomas Toifl, Cosimo Aprile

This paper presents a versatile crosstalk cancellation scheme for single-ended multi-lane backplane links. System-level investigations show that a scheme, which combines analog filters and decision-feedback crosstalk compensation on the receiver (RX) side ...

2018

A 60 Gb/s 1.9 pJ/bit NRZ Optical-Receiver with Low Latency Digital CDR in 14nm CMOS FinFET

Yusuf Leblebici, Alessandro Cevrero, Lukas Kull, Thomas Toifl, Ilter Ozkaya

This work reports a low power implementation of a 60Gb/s NRZ optical receiver (RX) in 14nm bulk CMOS finFET featuring a first-order digital CDR with high jitter tolerance (JTOL). The design includes a single phase-rotator (PR) with low complexity control l ...

2017

A 64-Gb/s 1.4-pJ/b NRZ Optical Receiver Data-Path in 14-nm CMOS FinFET

Yusuf Leblebici, Alessandro Cevrero, Lukas Kull, Thomas Toifl, Ilter Ozkaya

A 64-Gb/s high-sensitivity non-return to zero receiver (RX) data-path is demonstrated in the 14-nm-bulk FinFET CMOS technology. To achieve high sensitivity, the RX incorporates a transimpedance amplifier whose gain and bandwidth are co-optimized with a 1-t ...

Institute of Electrical and Electronics Engineers2017

A 64Gb/s 1.4pJ/b NRZ Optical-Receiver Data-Path in 14nm CMOS FinFET

Yusuf Leblebici, Alessandro Cevrero, Lukas Kull, Thomas Toifl, Ilter Ozkaya

This work describes a NRZ receiver data-path fabricated in 14nm bulk FinFET technology and characterized in an 850nm VCSEL based optical link up to 64Gb/s. It achieves 1.42pJ/bit energy efficiency while recovering PRBS-7 data (BER< 10-12) modulated by a VC ...

Ieee2017

Implementation of Low-Power 6–8 b 30–90 GS/s Time-Interleaved ADCs With Optimized Input Bandwidth in 32 nm CMOS

Yusuf Leblebici, Lukas Kull, Thomas Toifl

A model for voltage-based time-interleaved sampling is introduced with two implementations of highly interleaved analog-to-digital converters (ADCs) for 100 Gb/s communication systems. The model is suitable for ADCs where the analog input bandwidth is of c ...

Ieee-Inst Electrical Electronics Engineers Inc2016

A 5.9mW/Gb/s 7Gb/s/pin 8-Lane Single-Ended RX with Crosstalk Cancellation Scheme using a XCTLE and 56-tap XDFE in 32nm SOI CMOS

Yusuf Leblebici, Alessandro Cevrero, Lukas Kull, Volkan Cevher, Thomas Toifl, Cosimo Aprile, Ilter Ozkaya

This work reports an 8-lane single-ended RX featuring compact and low power far-end crosstalk (FEXT) cancellation circuits. The RX data-path consists of a cross continuous-time linear equalizer (XCTLE) to remove FEXT by nearest aggressors within the channe ...

2015

High-Speed CMOS ADC Design for 100Gb/s Communication Systems

Lukas Kull

EPFL2014

A 110mW 6 Bit 36GS/S Interleaved SAR ADC for 100 GBE Occupying 0.048mm2 in 32nm SOI CMOS

Yusuf Leblebici, Lukas Kull, Thomas Toifl

An area- and power-optimized asynchronous 32x interleaved SAR ADC achieving 36 GS/s at 110mW and 1V supply on the interleaver and 0.9V on the SAR ADCs is presented. The ADC features a 2-channel interleaver with data demultiplexing for enhanced bandwidth, a ...

2014

A 90GS/s 8b 667mW 64x Interleaved SAR ADC in 32nm Digital SOI CMOS

Yusuf Leblebici, Lukas Kull, Thomas Toifl

A 90GS/s 8b low-power ADC is presented achieving 33.0-36.0dB SNDR and a FoM of 203fJ/conversion-step. High conversion speed of up to 100GS/s and high input bandwidth of 22GHz is achieved by using a 1:64 interleaver with integrated sampling. Single NMOS tra ...

2014

A 3.1mW 8b 1.2GS/s Single-Channel Asynchronous SAR ADC with Alternate Comparators for Enhanced Speed in 32nm Digital SOI CMOS

Yusuf Leblebici, Lukas Kull, Thomas Toifl

An 8b 1.2GS/s single-channel SAR converter is implemented in 32nm CMOS, achieving 39.3dB SNDR and a FOM of 34fJ/conversion-step. High-speed operation is achieved by converting each sample with two alternating comparators clocked asynchronously and a redund ...

2013

A 3.1 mW 8b 1.2 GS/s Single-Channel Asynchronous SAR ADC With Alternate Comparators for Enhanced Speed in 32 nm Digital SOI CMOS

Yusuf Leblebici, Lukas Kull, Thomas Toifl

An 8b 1.2 GS/s single-channel Successive Approximation Register (SAR) ADC is implemented in 32 nm CMOS, achieving 39.3 dB SNDR and a Figure-of-Merit (FoM) of 34 fJ per conversion step. High-speed operation is achieved by converting each sample with two alt ...

Institute of Electrical and Electronics Engineers2013