Kai Cheng

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Related publications (5)

Conformal Passivation of Multi-Channel GaN Power Transistors for Reduced Current Collapse

Kai Cheng, Elison de Nazareth Matioli, Catherine Erine, Remco Franciscus Peter van Erp, Luca Nela, Halil Kerim Yildirim

Multi-channel power devices, in which several AlGaN/GaN layers are stacked to achieve multiple two-dimensional electron gases (2DEGs), have recently led to a significant increase in the device conductivity while maintaining high breakdown voltage, resultin ...

Institute of Electrical and Electronics Engineers2020

1200 V Multi-Channel Power Devices with 2.8 Ω•mm ON-Resistance

Kai Cheng, Elison de Nazareth Matioli, Jun Ma, Minghua Zhu, Catherine Erine, Luca Nela

Here we report novel multi-channel AlGaN/GaN MOSHEMTs with high breakdown voltage (V BR ) and low ON-resistance (R ON ). The multi-channel structure was judiciously designed to yield a small sheet resistance (R s ) of 80 Ω/sq using only four 2DEG channels, ...

IEEE2019

820 V GaN-on-Si Quasi-Vertical P-i-N Diodes with BFOM of 2.0 GW/cm2

Kai Cheng, Elison de Nazareth Matioli, Riyaz Mohammed Abdul Khadar, Chao Liu

Institute of Electrical and Electronics Engineers2018

Multi-channel tri-gate normally-on/off AlGaN/GaN MOSHEMTs on Si substrate with high breakdown voltage and low ON-resistance

Kai Cheng, Elison de Nazareth Matioli, Jun Ma, Catherine Erine

AIP American Institute of Physics2018

Multi-Channel Tri-gate GaN Power Schottky Diodes with Low ON-Resistance

Kai Cheng, Elison de Nazareth Matioli, Jun Ma, Georgios Kampitsis

Institute of Electrical and Electronics Engineers2018

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