Publications by Emanuele Andrea Casu

A Novel Reconfigurable CMOS Compatible Ka Band Bandstop Structure Using Split-Ring Resonators and Vanadium Dioxide (VO2) Phase Change Switches

Mihai Adrian Ionescu, Andreas Schueler, Emanuele Andrea Casu, Junrui Zhang, Anna Krammer, Riyaz Mohammed Abdul Khadar, Andrei Müller

The article presents the design, fabrication and characterization of a novel complementary metal-oxidesemiconductor (CMOS) compatible reconfigurable Ka band bandstop structure using split ring resonators (SRR) while employing the Vanadium Dioxide (VO2) pha ...

IEEE2019

3D Smith charts scattering parameters frequency-dependent orientation analysis and complex-scalar multi-parameter characterization applied to Peano reconfigurable vanadium dioxide inductors

Mihai Adrian Ionescu, Andreas Schueler, Josef Andreas Schuler, Montserrat Fernandez-Bolanos Badia, Emanuele Andrea Casu, Junrui Zhang, Anna Krammer, Matteo Cavalieri, Andrei Müller

Recently, the field of Metal-Insulator-Transition (MIT) materials has emerged as an unconventional solution for novel energy efficient electronic functions, such as steep slope subthermionic switches, neuromorphic hardware, reconfigurable radiofrequency fu ...

Nature Research2019

Hysteresis Dynamics in Double-Gated n-Type WSe2 FETs With High-k Top Gate Dielectric

Mihai Adrian Ionescu, Emanuele Andrea Casu, Nicolò Oliva, Matteo Cavalieri

2019

Novel Digital and Radio Frequency Electronic Functions Enabled by Steep-Slope Phase-Change Devices

Emanuele Andrea Casu

In the past half-century, the semiconductor industry has relied on the scaling of complementary metal-oxide-semiconductor (CMOS) transistor dimensions and on material and geometrical innovations to increase the computational density. Approaching the end of ...

EPFL2018

MoS2/VO2 vdW heterojunction devices: Tunable rectifiers, photodiodes and field effect transistors

Mihai Adrian Ionescu, Andreas Schueler, Olivier Martin, Arnaud Magrez, Chen Yan, Emanuele Andrea Casu, Nicolò Oliva, Anna Krammer

In this work we report a new class of ultra-thin film devices based on n-n van der Waals (vdW) heteroj unctions of MoS2 and VO2, which show remarkable tunable characteristics. The favorable band alignment combined with the sharp and clean vdW interface det ...

2018

Tunable RF phase shifters based on Vanadium Dioxide metal insulator transition

Mihai Adrian Ionescu, Josef Andreas Schuler, Montserrat Fernandez-Bolanos Badia, Wolfgang Amadeus Vitale, Emanuele Andrea Casu, Nicolò Oliva, Anna Krammer, Alessandro Fumarola, Matteo Cavalieri, Andrei Müller

2018

A Reconfigurable Inductor Based on Vanadium Dioxide Insulator-to-Metal Transition

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Emanuele Andrea Casu, Alessandro Fumarola, Matteo Cavalieri, Andrei Müller

This letter introduces a reconfigurable planar square-coil-shaped inductor exploiting as the tuning mechanism the insulator-to-metal transition (IMT) of a vanadium dioxide (VO2) switch placed in the interwinding space in an unprecedented manner. The VO2 th ...

2018

Polarity Control of Top Gated Black Phosphorous FETs by Workfunction Engineering of Pre-Patterned Au and Ag Embedded Electrodes

Igor Stolichnov, Mihai Adrian Ionescu, Wolfgang Amadeus Vitale, Emanuele Andrea Casu, Nicolò Oliva

We propose and experimentally demonstrate top-gated complementary n- and p-type black phosphorous field effect devices (FETs) by engineering the workfunction of pre-patterned electrodes embedded in a SiO2 bottom layer. Pre-patterned electrodes offer the ad ...

2018

Double gate n-type WSe2 FETs with high-k top gate dielectric and enhanced electrostatic control

Mihai Adrian Ionescu, Emanuele Andrea Casu, Nicolò Oliva, Matteo Cavalieri

We propose and experimentally demonstrate double-gated n-type WSe 2 FETs with excellent top gate high-k dielectric layer. Under back gate control, the devices behave as n-type enhancement transistors, with ON/OFF current ratios larger than 6 orders of magn ...

IEEE2018

Vanadium Oxide Bandstop Tunable Filter for Ka Frequency Bands Based on a Novel Reconfigurable Spiral Shape Defected Ground Plane CPW

Mihai Adrian Ionescu, Josef Andreas Schuler, Montserrat Fernandez-Bolanos Badia, Emanuele Andrea Casu, Anna Krammer, Alessandro Fumarola, Andrei Müller

2018

A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor

Mihai Adrian Ionescu, Josef Andreas Schuler, Wolfgang Amadeus Vitale, Arnab Biswas, Cem Alper, Emanuele Andrea Casu, Teodor Rosca, Anna Krammer, Qun Zhao

Steep-slope transistors allow to scale down the supply voltage and the energy per computed bit of information as compared to conventional field-effect transistors (FETs), due to their sub-60 mV/decade subthreshold swing at room temperature. Currently pursu ...

Nature Research2017

Shunt capacitive switches based on VO2 metal insulator transition for RF phase shifter applications

Mihai Adrian Ionescu, Andreas Schueler, Josef Andreas Schuler, Montserrat Fernandez-Bolanos Badia, Wolfgang Amadeus Vitale, Emanuele Andrea Casu, Mariazel de la Candelas Maqueda López, Michele Tamagnone, Nicolò Oliva, Anna Krammer

IEEE2017

Lowering motional resistance by partially HfO2 gap filling in double-ended tuning fork MEMS resonators

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Emanuele Andrea Casu, Mariazel de la Candelas Maqueda López

IEEE2017

Low Impedance ALD HfO2 Partially-Filled-Gap Flexural and Bulk MEMS Resonators Piezoresistively Detected for Distributed Mass Sensing

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Emanuele Andrea Casu, Mariazel de la Candelas Maqueda López

2017

Van der Waals MoS2/VO2 heterostructure junction with tunable rectifier behavior and efficient photoresponse

Igor Stolichnov, Mihai Adrian Ionescu, Andreas Schueler, Olivier Martin, Arnaud Magrez, Chen Yan, Emanuele Andrea Casu, Teodor Rosca, Nicolò Oliva, Anna Krammer

Junctions between n-type semiconductors of different electron affinity show rectification if the junction is abrupt enough. With the advent of 2D materials, we are able to realize thin van der Waals (vdW) heterostructures based on a large diversity of mate ...

Nature Research2017

Hybrid phase-change — Tunnel FET (PC-TFET) switch with subthreshold swing < 10mV/decade and sub-0.1 body factor: Digital and analog benchmarking

Mihai Adrian Ionescu, Josef Andreas Schuler, Wolfgang Amadeus Vitale, Arnab Biswas, Cem Alper, Emanuele Andrea Casu, Teodor Rosca, Nicolò Oliva, Anna Krammer

In this paper we report the first hybrid Phase-Change - Tunnel FET (PC-TFET) device configurations for achieving a deep sub-thermionic steep subthreshold swing at room temperature and subthreshold power savings. The proposed hybrid device feedbacks the ste ...

IEEE2016

Field-enhanced design of steep-slope VO2 switches for low actuation voltage

Juan Ramon Mosig, Mihai Adrian Ionescu, Clara-Fausta Moldovan, Wolfgang Amadeus Vitale, Emanuele Andrea Casu, Michele Tamagnone, Luca Petit

The abrupt metal-insulator transition in vanadium dioxide (VO2) offers novel performance and functionality for beyond CMOS switches, enabling simultaneous high ON current and ultra-steep subthreshold slope with low temperature dependence. We developed a fi ...

IEEE2016