Publications by Cédric Tournier-Colletta

Atomic and electronic structure of a Rashba p-n junction at the BiTeI surface

Helmuth Berger, Philippe Bugnon, Marco Grioni, Oleg Yazyev, Gabriel Albert Autes, Cédric Tournier-Colletta

The non-centro-symmetric semiconductor BiTeI exhibits two distinct surface terminations that support spin-split Rashba surface states. Their ambipolarity can be exploited for creating spin-polarized p-n junctions at the boundaries between domains with diff ...

American Physical Society2014

Momentum and photon energy dependence of the circular dichroic photoemission in the bulk Rashba semiconductors BiTeX (X = I, Br, Cl)

Helmuth Berger, Philippe Bugnon, Marco Grioni, Arnaud Magrez, Oleg Yazyev, Luca Moreschini, Alberto Crepaldi, Gabriel Albert Autes, Cédric Tournier-Colletta, Jens Christian Johannsen

Bulk Rashba systems BiTeX (X = I, Br, Cl) are emerging as important candidates for developing spintronics devices because of the coexistence of spin-split bulk and surface states, along with the ambipolar character of the surface charge carriers. The need ...

American Physical Society2014

Structural and electronic properties of the Bi/Au(110)-1x4 surface

Harald Brune, Marco Grioni, François Patthey, Oleg Yazyev, Marina Pivetta, Alberto Crepaldi, Gabriel Albert Autes, Cédric Tournier-Colletta

We report on the structural and electronic properties of the Bi/Au(110)-1 x 4 surface, by combining scanning tunneling microscopy, angle-resolved photoemission spectroscopy, and first-principles calculations. The analysis of the precursor 1 x 8 moire struc ...

American Physical Society2013

Electronic Instability in a Zero-Gap Semiconductor: The Charge-DensityWave in (TaSe4)(2)I

Helmuth Berger, Marco Grioni, Oleg Yazyev, Luca Moreschini, Alberto Crepaldi, Simon Karl Moser, Gabriel Albert Autes, Cédric Tournier-Colletta

We report a comprehensive study of the paradigmatic quasi-1D compound (TaSe4)(2)I performed by means of angle-resolved photoemission spectroscopy (ARPES) and first-principles electronic structure calculations. We find it to be a zero-gap semiconductor in t ...

American Physical Society2013

Giant Ambipolar Rashba Effect in the Semiconductor BiTeI

Helmuth Berger, Philippe Bugnon, Klaus Kern, Marco Grioni, Oleg Yazyev, Luca Moreschini, Alberto Crepaldi, Simon Karl Moser, Gabriel Albert Autes, Naunidh Singh Virk, Cédric Tournier-Colletta

We observe a giant spin-orbit splitting in the bulk and surface states of the noncentrosymmetric semiconductor BiTeI. We show that the Fermi level can be placed in the valence or in the conduction band by controlling the surface termination. In both cases, ...

Amer Physical Soc2012