Publications by Federico Matteini

Tuning adatom mobility and nanoscale segregation by twin formation and polytypism

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Federico Matteini, Luca Francaviglia

Nanoscale variations in the composition of an AlxGa1−xAs shell around a GaAs nanowire affect the nanowire functionality and can lead to the formation of localized quantum emitters. These composition fluctuations can be the consequence of variations of crys ...

2018

Novel illumination strategy for lidar enabled by update in the laser product standards

Lucio Carrara, Federico Matteini

In this article, the authors propose a novel illumination strategy for light detection and ranging (lidar) systems emitting in the retinal hazard region (400 m

AMER INST PHYSICS2018

Dataset for "Tuning adatom mobility and nanoscale segregation by twin formation and polytypism"

Anna Fontcuberta i Morral, Federico Matteini, Luca Francaviglia

Nanoscale variations in the composition of an AlxGa1−xAs shell around a GaAs nanowire affect the nanowire functionality and can lead to the formation of localized quantum emitters. These composition fluctuations can be the consequence of variations of crys ...

Zenodo2018

Investigations of doping via optical pump terahertz-probe spectroscopy

Anna Fontcuberta i Morral, Alberto Casadei, Federico Matteini, Francesca Amaduzzi

Reliable doping in semiconductor nanowires is essential for the development of novel optoelectronic devices. Dopant incorporation within the nanowire can allow for optimisation of key optoelectronic properties, such as electron mobility and carrier lifetim ...

IEEE Computer Societyhelp@computer.org2017

Conductive-probe atomic force microscopy as a characterization tool for nanowire-based solar cells

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Maria Ricci, Esther Alarcon Llado, Federico Matteini, Jelena Vukajlovic Plestina, Dmitry Mikulik, Natasa Vulic

The photonic properties of nanowires advocate for their utilization in next generation solar cells. Compared to traditional devices, the electric scheme is transformed from a single into an ensemble of pn junctions connected in parallel. This new configura ...

Elsevier Science Bv2017

Visual Understanding of Light Absorption and Waveguiding in Standing Nanowires with 3D Fluorescence Confocal Microscopy

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Esther Alarcon Llado, Federico Matteini

Semiconductor nanowires are promising building blocks for next generation photonics. Indirect proofs of large absorption cross sections have been reported in nanostructures with subwavelength diameters, an effect that is even more prominent in vertically s ...

Amer Chemical Soc2017

Increased Photoconductivity Lifetimes in GaAs Nanowires via n-Type and p-Type Shell Doping

Anna Fontcuberta i Morral, Federico Matteini, Francesca Amaduzzi

Reliable doping in GaAs nanowires is essential for the development of novel optoelectronic devices. Previously, GaAs nanowires have been shown to exhibit extremely short photoconductivity lifetimes of a few picoseconds due to their high surface recombinati ...

Ieee2016

Time-Resolved Nonlinear Coupling between Orthogonal Flexural Modes of a Pristine GaAs Nanowire

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Federico Matteini

We demonstrate nonlinear coupling between two orthogonal flexural modes of single as-grown GaAs nanowires. The resonant frequency of one mode can be shifted over many line widths by mechanically driving the other mode. We present time-domain measurements o ...

American Chemical Society2016

Understanding and exploiting optical properties in semiconductor nanowires for solar energy conversion

Anna Fontcuberta i Morral, Esther Alarcon Llado, Federico Matteini, Heidi Andrea Potts

Semiconductor nanowires are promising building blocks for next generation solar energy conversion at low cost, due to their large absorption cross-sections. Here, the understanding of their absorption power is explored via computational and experimental me ...

IEEE2016

Quantum Heterostructures Based on GaAs Nanomembranes for Photonic Applications

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Jean-Baptiste Leran, Federico Matteini, Martin George Friedl, Heidi Andrea Potts

Ieee2016

Molecular beam epitaxy of InAs nanowires in SiO2 nanotube templates: challenges and prospects for integration of III-Vs on Si

Anna Fontcuberta i Morral, Jean-Baptiste Leran, Federico Matteini, Frank Meyer, Ruben Ricca, Jelena Vukajlovic Plestina, Heidi Andrea Potts, Vladimir Dubrovskii

Guided growth of semiconductor nanowires in nanotube templates has been considered as a potential platform for reproducible integration of III-Vs on silicon or other mismatched substrates. Herein, we report on the challenges and prospects of molecular beam ...

Institute of Physics2016

Tuning the response of non-allowed Raman modes in GaAs nanowires

Anna Fontcuberta i Morral, Emanuele Uccelli, Gözde Tütüncüoglu, Esther Alarcon Llado, Federico Matteini, Francesca Amaduzzi, Hubert Hautmann

We report on the use of photonic resonances in Raman spectroscopy on single nanowires for the enhancement of forbidden modes and the study of the interaction of phonons with free-carriers. This is achieved by suspending nanowire over a trench and detecting ...

Iop Publishing Ltd2016

From Twinning to Pure Zincblende Catalyst-Free InAs(Sb) Nanowires

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Esther Alarcon Llado, Federico Matteini, Francesca Amaduzzi, Martin George Friedl, Heidi Andrea Potts

III-V nanowires are candidate building blocks for next generation electronic and optoelectronic platforms. Low bandgap semiconductors such as In As and InSb are interesting because of their high electron mobility. Fine control of the structure, morphology, ...

American Chemical Society2016

Impact of the Ga Droplet Wetting, Morphology, and Pinholes on the Orientation of GaAs Nanowires

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Jean-Baptiste Leran, Federico Matteini, Jelena Vukajlovic Plestina, Heidi Andrea Potts, William Craig Carter, Dmitry Mikulik

Ga-catalyzed growth of GaAs nanowires on Si is a candidate process for achieving seamless III/V integration on IV. In this framework, the nature of silicon's surface oxide is known to have a strong influence on nanowire growth and orientation and therefore ...

American Chemical Society2016

Increased Photoconductivity Lifetime in GaAs Nanowires by Controlled n-Type and p-Type Doping

Anna Fontcuberta i Morral, Alberto Casadei, Federico Matteini, Fauzia Jabeen

Controlled doping of GaAs nanowires is crucial for the development of nanowire-based electronic and optoelectronic devices. Here, we present a noncontact method based on time resolved terahertz photoconductivity for assessing n- and p-type doping efficienc ...

American Chemical Society2016

Growth of GaAs nanowires on Si (111) for photovoltaic applications

Federico Matteini

The goal of this thesis is to master the synthesis of GaAs nanowires ensembles on Si for their application in solar cells. Semiconductor nanowires present promising characteristics for photovoltaic applications: they benefit from their longitudinal high as ...

EPFL2016

Modulation Doping of GaAs/AlGaAs Core-Shell Nanowires With Effective Defect Passivation and High Electron Mobility

Anna Fontcuberta i Morral, Sonia Conesa Boj, Alberto Casadei, Federico Matteini, Fauzia Jabeen, Francesca Amaduzzi

Reliable doping is required to realize many devices based on semiconductor nanowires. Group IIIV nanowires show great promise as elements of high-speed optoelectronic devices, but for such applications it is important that the electron mobility is not comp ...

American Chemical Society2015

Towards defect-free 1-D GaAs/AlGaAs heterostructures based on GaAs nanomembranes

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Davide Deiana, Federico Matteini, Heidi Andrea Potts

We demonstrate the growth of defect-free zinc-blende GaAs nanomembranes by molecular beam epitaxy. Our growth studies indicate a strong impact of As-4 re-emission and shadowing in the growth rate of the structures. The highest aspect ratio structures are o ...

Royal Soc Chemistry2015

Magnetization reversal of an individual exchange-biased permalloy nanotube

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Dirk Grundler, Federico Matteini

We investigate the magnetization reversal mechanism in an individual permalloy (Py) nanotube (NT) using a hybrid magnetometer consisting of a nanometer-scale SQUID (nanoSQUID) and a cantilever torque sensor. The Py NT is affixed to the tip of a Si cantilev ...

American Physical Society2015

Wetting of Ga on SiOx and Its Impact on GaAs Nanowire Growth

Gözde Tütüncüoglu, Federico Matteini, Fauzia Jabeen, Heidi Andrea Potts

Ga-assisted growth of GaAs nanowires on silicon provides a path for integrating high-purity III-Vs on silicon. The nature of the oxide on the silicon surface has been shown to impact the overall possibility of nanowire growth and their orientation with the ...

American Chemical Society2015