Publications by Arnaud Robert André Crassous

Engineered a/c domain patterns in multilayer (110) epitaxial Pb(Zr,Ti)O-3 thin films: Impact on domain compliance and piezoelectric properties

Nava Setter, Silviu Cosmin Sandu, Mahamudu Mtebwa, Andrea Mazzalai, Arnaud Robert André Crassous

While there is extensive literature on the influence of both compressive and tensile strain on the domain patterns of (001) tetragonal ferroelectric thin films, little is known regarding domain engineering in (110) films. The primary reason is the absence ...

2016

Controlled creation and displacement of charged domain walls in ferroelectric thin films

Nava Setter, Silviu Cosmin Sandu, Tomas Sluka, Ludwig Feigl, Arnaud Robert André Crassous

Charged domain walls in ferroelectric materials are of high interest due to their potential use in nanoelectronic devices. While previous approaches have utilized complex scanning probe techniques or frustrative poling here we show the creation of charged ...

Nature Research2016

Polarization charge as a reconfigurable quasi-dopant in ferroelectric thin films

Nava Setter, Alexander Tagantsev, Tomas Sluka, Arnaud Robert André Crassous

Impurity elements used as dopants are essential to semiconductor technology for controlling the concentration of charge carriers. Their location in the semiconductor crystal is determined during the fabrication process and remains fixed. However, another p ...

Nature Publishing Group2015

Bent Ferroelectric Domain Walls as Reconfigurable Metallic-Like Channels

Nava Setter, Alexander Tagantsev, Enrico Colla, Igor Stolichnov, Tomas Sluka, Petr Yudin, Ludwig Feigl, Xiankui Wei, Arnaud Robert André Crassous, Konstantin Shapovalov

Use of ferroelectric domain-walls in future electronics requires that they are stable, rewritable conducting channels. Here we demonstrate nontherrnally activated metallic-like conduction in nominally uncharged, bent, rewritable ferroelectric-ferroelastic ...

Amer Chemical Soc2015

Thickness Dependence of Domain-Wall Patterns in BiFeO3 Thin Films

Nava Setter, Silviu Cosmin Sandu, Tomas Sluka, Arnaud Robert André Crassous

Unique properties of domain walls in ferroelectrics have been recently discovered but methods of their controlled engineering remain underdeveloped. Here we investigate the domain structure of Bi0.9La0.1FeO3 epitaxial thin films with piezoelectric force mi ...

Taylor & Francis2015