Publications by Maxime Victor Thammasack

An FPGA-Based Test System for RRAM Technology Characterization

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Maxime Victor Thammasack, Armando Biscontini

Resistive random access memory (RRAM) technologies have recently gained large attention from the academic and industrial research communities. Significant efforts have been made to enhance the performance of the memory stacks from both communities through ...

2018

Low Temperature Wet Conformal Nickel Silicide Deposition for Transistor Technology through an Organometallic Approach

Giovanni De Micheli, Michele De Marchi, Pierre-Emmanuel Julien Marc Gaillardon, Tsung-Han Lin, Maxime Victor Thammasack, David Baudouin

The race for performance of integrated circuits is nowadays facing a downscale limitation. To overpass this nanoscale limit, modern transistors with complex geometries have flourished, allowing higher performance and energy efficiency. Accompanying this br ...

Amer Chemical Soc2017

Effect of O2 migration in Pt/HfO2/Ti/Pt structure

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Maxime Victor Thammasack

In this paper, we study the post-fabrication phenomenon of natural oxidation of the Ti layer observed in a Pt/HfO2/Ti/Pt Resistive Random Access Memory (OxRRAM) stack with no external influence. We identify that the resistance ratio decreases by ...

Springer Verlag2017

Co-design of ReRAM Passive Crossbar Arrays Integrated in 180nm CMOS Technology

Yusuf Leblebici, Giovanni De Micheli, Michele De Marchi, Davide Sacchetto, Jury Sandrini, Pierre-Emmanuel Julien Marc Gaillardon, Tugba Demirci, Maxime Victor Thammasack, Marios Barlas

This work presents the co-integration of resistive random access memory crossbars within a 180nm Read-Write CMOS chip. TaOx-based ReRAMs have been fabricated and characterized with materials and process steps compatible with the CMOS Back-End-of ...

Institute of Electrical and Electronics Engineers2016

Low-Voltage Read/Write Circuit Design for Transistorless ReRAM Crossbar Arrays in 180nm CMOS Technology

Yusuf Leblebici, Davide Sacchetto, Jury Sandrini, Tugba Demirci, Maxime Victor Thammasack

This paper presents a read-write design solution for passive ReRAM crossbar memory arrays to overcome the sneak current paths problem. The proposed circuitry includes an auto-calibration feature to overcome the sneak current effects during the READ operati ...

2015

Heterogeneous Integration of ReRAM Crossbars in 180nm CMOS BEoL Process

Yusuf Leblebici, Giovanni De Micheli, Davide Sacchetto, Jury Sandrini, Pierre-Emmanuel Julien Marc Gaillardon, Tugba Demirci, Maxime Victor Thammasack

This work reports on a heterogeneous integration of resistive memories into the Back-End-of-the-Line of 180nm standard CMOS foundry chips. A TaOx-based ReRAM technology with materials and processes fully CMOS compatible has been developed and characterized ...

Elsevier2015